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Number of items: 6.

Kerber, Andreas and Cartier, E. and Degraeve, R. and Roussel, Ph. and Pantisano, L. and Kauerauf, T. and Groeseneken, G. and Maes, H. E. and Schwalke, Udo (2004):
Charge Trapping and Dielectric Reliability of SiO2/Al2O3 Gate Stacks with TiN Electrodes.
In: Microelectronic Engineering, pp. 267-272, 72, (1-4), [Online-Edition: http://dx.doi.org/10.1016/j.mee.2004.01.002],
[Article]

Kerber, Andreas and Cartier, E. and Groeseneken, G. and Maes, H. E. and Schwalke, Udo (2003):
Stress Induced Charge Trapping Effects in SiO2/Al2O3 Gate Stacks with TiN Electrodes.
In: Journal of Applied Physics, pp. 6627-6630, 94, (10), [Online-Edition: http://dx.doi.org/10.1063/1.1621718],
[Article]

Kerber, Andreas and Cartier, E. and Degraeve, R. and Roussel, Ph. and Pantisano, L. and Kauerauf, T. and Groeseneken, G. and Maes, H. E. and Schwalke, Udo (2003):
Charge Trapping and Dielectric Reliability of SiO2/Al2O3 Gate Stacks with TiN Electrodes.
In: IEEE Transactions on Electron Devices, pp. 1261-1269, 50, (5), [Online-Edition: http://dx.doi.org/10.1109/TED.2003.813486],
[Article]

Kerber, Andreas and Cartier, E. and Pantisano, L. and Rosmeulen, M. and Degraeve, R. and Kauerauf, T. and Groeseneken, G. and Maes, H. E. and Schwalke, Udo (2003):
Characterization of the VT Instability in SiO2/HfO2 Gate Dielectrics.
In: Proceedings of the IEEE International Reliability Physics Symposium (IRPS), pp. 41-45, [Online-Edition: http://dx.doi.org/10.1109/RELPHY.2003.1197718],
[Article]

Kerber, Andreas and Cartier, E. and Pantisano, L. and Degraeve, R. and Kauerauf, T. and Kim, Y. and Hou, A. and Groeseneken, G. and Maes, H. E. and Schwalke, Udo (2003):
Origin of the Threshold Voltage Instability in SiO2/HfO2 Dual Layer Gate Dielectrics.
In: IEEE Dlectron Device Letters, pp. 87-89, 24, (2), [Online-Edition: http://dx.doi.org/10.1109/LED.2003.808844],
[Article]

Kerber, Andreas and Cartier, E. and Pantisano, L. and Degraeve, R. and Kim, Y. and Hou, A. and Groeseneken, G. and Maes, H. E. and Schwalke, Udo (2002):
Charging Instability in n-Channel MOS-FETs with SiO2/HfO2 Gate Dielectric.
In: IEEE Semiconductor Interface Specialist Conference, San Diego, CA, USA, 05.-07.12.2002, [Conference or Workshop Item]

This list was generated on Sat Oct 12 01:10:23 2019 CEST.