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Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2016):
Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications.
In: ECS Transactions, pp. 57-63, 75, (13), [Article]

Item Type: Article
Erschienen: 2016
Creators: Krauss, Tillmann and Wessely, Frank and Schwalke, Udo
Title: Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications
Language: English
Journal or Publication Title: ECS Transactions
Volume: 75
Number: 13
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Date Deposited: 24 Oct 2016 08:14
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