Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Beckmann, Karsten ; Riedinger, Bernadette ; Schwalke, Udo (2011):
Silicon-CMOS Compatible In-situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio.
In: Physica E: Low-dimensional Systems and Nanostructures, 44 (7-8), pp. 1132-1135. [Article]
Official URL: http://dx.doi.org/10.1016/j.physe.2011.12.022
| Item Type: | Article |
|---|---|
| Erschienen: | 2011 |
| Creators: | Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Beckmann, Karsten ; Riedinger, Bernadette ; Schwalke, Udo |
| Title: | Silicon-CMOS Compatible In-situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio |
| Language: | English |
| Journal or Publication Title: | Physica E: Low-dimensional Systems and Nanostructures |
| Journal volume: | 44 |
| Number: | 7-8 |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics |
| Date Deposited: | 09 Jan 2012 07:38 |
| Official URL: | http://dx.doi.org/10.1016/j.physe.2011.12.022 |
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