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Silicon-CMOS Compatible In-situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Beckmann, Karsten and Riedinger, Bernadette and Schwalke, Udo (2011):
Silicon-CMOS Compatible In-situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio.
In: Physica E: Low-dimensional Systems and Nanostructures, pp. 1132-1135, 44, (7-8), [Online-Edition: http://dx.doi.org/10.1016/j.physe.2011.12.022],
[Article]

Item Type: Article
Erschienen: 2011
Creators: Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Beckmann, Karsten and Riedinger, Bernadette and Schwalke, Udo
Title: Silicon-CMOS Compatible In-situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio
Language: English
Journal or Publication Title: Physica E: Low-dimensional Systems and Nanostructures
Volume: 44
Number: 7-8
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Date Deposited: 09 Jan 2012 07:38
Official URL: http://dx.doi.org/10.1016/j.physe.2011.12.022
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