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Comparison of Praseodymium Oxide Gate MOSFETs with Conventional SiO2 MOSFETs: A Simulation Study

Komaragiri, Rama Subrahmanyam and Schwalke, Udo and Stefanov, Yordan and Ruland, Tino (2003):
Comparison of Praseodymium Oxide Gate MOSFETs with Conventional SiO2 MOSFETs: A Simulation Study.
In: Proceedings of the International Workshop on Physics of Semiconductor Devices (IWPSD), [Article]

Item Type: Article
Erschienen: 2003
Creators: Komaragiri, Rama Subrahmanyam and Schwalke, Udo and Stefanov, Yordan and Ruland, Tino
Title: Comparison of Praseodymium Oxide Gate MOSFETs with Conventional SiO2 MOSFETs: A Simulation Study
Language: English
Journal or Publication Title: Proceedings of the International Workshop on Physics of Semiconductor Devices (IWPSD)
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Event Title: International Workshop on Physics of Semiconductor Devices (IWPSD)
Event Location: Madras, Indien
Date Deposited: 20 Nov 2008 08:24
License: [undefiniert]
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