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Epitaxial High-K Oxide Metal Gate MOSFETs: Damascene CMP Process Integration and Electrical Results

Endres, Ralf and Stefanov, Yordan and Schwalke, Udo (2006):
Epitaxial High-K Oxide Metal Gate MOSFETs: Damascene CMP Process Integration and Electrical Results.
In: Japanese Journal of Applied Physics, [Article]

Item Type: Article
Erschienen: 2006
Creators: Endres, Ralf and Stefanov, Yordan and Schwalke, Udo
Title: Epitaxial High-K Oxide Metal Gate MOSFETs: Damascene CMP Process Integration and Electrical Results
Language: English
Journal or Publication Title: Japanese Journal of Applied Physics
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Event Title: 2006 International Conference on Solid State Devices and Materials (SSDM)
Event Location: Yokohama, Japan
Event Dates: 13.-15.09.2006
Date Deposited: 20 Nov 2008 08:26
License: [undefiniert]
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