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Mass-Production of Passivated CNTFETs: Statistics and Gate-Field Dependence of Hysteresis Effect

Rispal, Lorraine and Tschischke, T. and Yang, Hongyu and Schwalke, Udo (2008):
Mass-Production of Passivated CNTFETs: Statistics and Gate-Field Dependence of Hysteresis Effect.
In: ECS Transactions, pp. 65-71, 13, (14), [Online-Edition: http://dx.doi.org/10.1149/1.2998532],
[Article]

Item Type: Article
Erschienen: 2008
Creators: Rispal, Lorraine and Tschischke, T. and Yang, Hongyu and Schwalke, Udo
Title: Mass-Production of Passivated CNTFETs: Statistics and Gate-Field Dependence of Hysteresis Effect
Language: English
Journal or Publication Title: ECS Transactions
Volume: 13
Number: 14
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Event Title: 213th Meeting of The Electrochemical Society (ECS)
Event Location: Phoenix, AZ, USA
Event Dates: 18.-23.05.2008
Date Deposited: 01 Jul 2011 08:20
Official URL: http://dx.doi.org/10.1149/1.2998532
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