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The Formation and Characterisation of Lanthanum Oxide Based Si/High-k/NiSi Gate Stacks by Electron-Beam Evaporation: An Examination of In-Situ Amorphous Silicon Capping and NiSi Formation

Hurley, P. K. and Pijolat, M. and Cherkaoui, K. and O'Connor, E. and O'Connell, D. and Negara, M. A. and Lemme, M. C. and Gottlob, D. B. and Schmidt, M. and Stegmaier, K. and Schwalke, Udo and Hall, S. and Buiu, O. and Engstrom, O. and Newcomb, S. B. (2007):
The Formation and Characterisation of Lanthanum Oxide Based Si/High-k/NiSi Gate Stacks by Electron-Beam Evaporation: An Examination of In-Situ Amorphous Silicon Capping and NiSi Formation.
In: ECS Transactions, pp. 145-156, 11, (4), [Online-Edition: http://dx.doi.org/10.1149/1.2779556],
[Article]

Item Type: Article
Erschienen: 2007
Creators: Hurley, P. K. and Pijolat, M. and Cherkaoui, K. and O'Connor, E. and O'Connell, D. and Negara, M. A. and Lemme, M. C. and Gottlob, D. B. and Schmidt, M. and Stegmaier, K. and Schwalke, Udo and Hall, S. and Buiu, O. and Engstrom, O. and Newcomb, S. B.
Title: The Formation and Characterisation of Lanthanum Oxide Based Si/High-k/NiSi Gate Stacks by Electron-Beam Evaporation: An Examination of In-Situ Amorphous Silicon Capping and NiSi Formation
Language: English
Journal or Publication Title: ECS Transactions
Volume: 11
Number: 4
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Date Deposited: 20 Nov 2008 08:27
Official URL: http://dx.doi.org/10.1149/1.2779556
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