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Device Level and Nanoscale Electrical Characterization of Crystalline Praseodymium Oxide High-k Gate Dielectric MOSFETs

Stefanov, Yordan and Komaragiri, Rama Subrahmanyam and Schwalke, Udo (2004):
Device Level and Nanoscale Electrical Characterization of Crystalline Praseodymium Oxide High-k Gate Dielectric MOSFETs.
In: Proceedings of the SEMATECH International Workshop on Electrical Characterization and Reliability for High-K Devices, [Article]

Item Type: Article
Erschienen: 2004
Creators: Stefanov, Yordan and Komaragiri, Rama Subrahmanyam and Schwalke, Udo
Title: Device Level and Nanoscale Electrical Characterization of Crystalline Praseodymium Oxide High-k Gate Dielectric MOSFETs
Language: English
Journal or Publication Title: Proceedings of the SEMATECH International Workshop on Electrical Characterization and Reliability for High-K Devices
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Event Title: SEMATECH International Workshop on Electrical Characterization and Reliability for High-K Devices
Event Location: Austin, TX, USA
Event Dates: 04.-05.11.2004
Date Deposited: 20 Nov 2008 08:18
License: [undefiniert]
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