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Process Damage-free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K

Endres, Ralf and Stefanov, Yordan and Wessely, Frank and Zaunert, Florian and Schwalke, Udo (2008):
Process Damage-free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K.
In: Microelectronic Engineering, (1), 85. pp. 15-19, [Online-Edition: http://dx.doi.org/10.1016/j.mee.2007.03.008],
[Article]

Item Type: Article
Erschienen: 2008
Creators: Endres, Ralf and Stefanov, Yordan and Wessely, Frank and Zaunert, Florian and Schwalke, Udo
Title: Process Damage-free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K
Language: English
Journal or Publication Title: Microelectronic Engineering
Journal volume: 85
Number: 1
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Date Deposited: 01 Jul 2011 08:55
Official URL: http://dx.doi.org/10.1016/j.mee.2007.03.008
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