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Number of items: 28.

Endres, Ralf and Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2011):
Damascene TiN-Gd2O3-Gate Stacks: Gentle Fabrication and Electrical Properties.
In: Microelectronic Engineering, pp. 3393-3398, 88, (12), [Online-Edition: http://dx.doi.org/10.1016/j.mee.2010.05.013],
[Article]

Endres, Ralf (2011):
Gate-Last-Prozessintegration und elektrische Bewertung von High-k-Dielektrika und Metall-Elektroden in MOS-Bauelementen.
Darmstadt, Deutschland, Darmstädter Dissertationen, Institut für Halbleitertechnik und Nanoelektronik, [Online-Edition: urn:nbn:de:tuda-tuprints-25017],
[Ph.D. Thesis]

Endres, Ralf and Gottlob, H. D. B. and Schmidt, M. and Schwendt, D. and Osten, H. J. and Schwalke, Udo (2010):
Crystalline Gadolinium Oxide: A Promising High-K Candidate for Future CMOS Generations.
In: ECS Transactions, pp. 25-29, 33, (3), [Online-Edition: http://dx.doi.org/10.1149/1.3481588],
[Article]

Wessely, Frank and Krauss, Tillmann and Endres, Ralf and Schwalke, Udo (2010):
Novel Application of Wafer-bonded MultiSOI: Junctionless Nanowire Transistors for CMOS Logic.
In: ECS Transactions, pp. 169-173, 33, (4), [Online-Edition: http://dx.doi.org/10.1149/1.3483505],
[Article]

Endres, Ralf and Schwalke, Udo (2010):
Prozessintegration und elektrische Charakterisierung von kristallinen Gd2O3 High-k Dielektrika.
In: VDE-Fachgruppentagung 8.5.6 - fWLR / Wafer Level Reliability, Erfurt, Deutschland, 17.-18.05.2010, [Conference or Workshop Item]

Wessely, Frank and Krauss, Tillmann and Endres, Ralf and Schwalke, Udo (2010):
Dopant Free Multi-Gate Silicon Nanowire CMOS-Inverter on SOI Substrate.
In: 5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS), pp. 1-3, [Online-Edition: http://dx.doi.org/10.1109/DTIS.2010.5487572],
[Article]

Endres, Ralf and Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2009):
Gentle Gate Last Integration and Electrical Characterization of TiN/Gd2O3/Si MOS Capacitors and Field Effect Transistors.
In: 40th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 03.-05.12.2009, [Conference or Workshop Item]

Endres, Ralf and Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2009):
Damascene Metal Gate Technology for Damage-free Gate-Last High-K Process Integration.
In: 3rd International Conference on Signals, Circuits and Systems (SCS), [Online-Edition: http://dx.doi.org/10.1109/ICSCS.2009.5414209],
[Article]

Wessely, Frank and Endres, Ralf and Schwalke, Udo (2009):
Scaling of the Damascene Metal Gate Integration Process via Electron Beam Lithography.
In: 3rd International Conference on Signals, Circuits and Systems (SCS), [Online-Edition: http://dx.doi.org/10.1109/ICSCS.2009.5414217],
[Article]

Lemme, M. C. and Gottlob, H. D. B. and Echtermeyer, T. and Kurz, H. and Endres, Ralf and Schwalke, Udo and Czernohorsky, M. and Osten, H. J. (2009):
Complementary Metal Oxide Semiconductor Integration of Epitaxial Gd2O3.
In: Journal of Vacuum Science & Technology B, pp. 258-261, 27, (1), [Online-Edition: http://dx.doi.org/10.1116/1.3054350],
[Article]

Endres, Ralf and Wessely, Frank and Schwalke, Udo (2008):
CMP-based Gate Last High-K Integration.
In: Proceedings of the 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), pp. 544-547, [Online-Edition: http://www.stw.nl/NR/rdonlyres/678497B6-D48F-4F76-94AF-EB589...],
[Article]

Lemme, M. C. and Gottlob, H. D. B. and Echtermeyer, T. and Kurz, H. and Endres, Ralf and Schwalke, Udo and Czernohorsky, M. and Osten, H. J. (2008):
CMOS Integration of Epitaxial Gd2O3.
In: 15th Workshop on Dielectrics in Microelectronics (WoDiM), 23.-25.06.2008, Bad Saarow, Deutschland, [Conference or Workshop Item]

Endres, Ralf and Stefanov, Yordan and Wessely, Frank and Zaunert, Florian and Schwalke, Udo (2008):
Process Damage-free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K.
In: Microelectronic Engineering, pp. 15-19, 85, (1), [Online-Edition: http://dx.doi.org/10.1016/j.mee.2007.03.008],
[Article]

Endres, Ralf and Schwalke, Udo (2008):
Damascene Metal Gate Technology for Damage-Free High-k Process Integration.
In: Proceedings of the 7th International Semiconductor Technology Conference (ISTC), pp. 486-492, [Article]

Zaunert, Florian and Endres, Ralf and Schwalke, Udo (2007):
Device and Stress Simulation of MOSFETs with Crystalline High-k Gate-Dielectrics Manufactured with Replacement Gate Process.
In: Proceedings of Semiconductor Advances for Future Electronics (SAFE) 2007, pp. 488-491, [Online-Edition: http://www.stw.nl/NR/rdonlyres/298C269E-5F75-46AC-875E-ACF93...],
[Article]

Endres, Ralf and Schwalke, Udo (2007):
Damascene Metal Gate Technology: A Front-End CMP Based Universal Platform for High-k Evaluation at the Device Level.
In: Proceedings of the International Conference on Planarization Technology 2007 (ICPT), pp. 421-426, [Online-Edition: http://elib1.ulb.tu-darmstadt.de/ieee/search/srchabstract.js...],
[Article]

Endres, Ralf and Schwalke, Udo (2007):
Damascene Metal Gate Technology: A Novel Approach towards Nano CMOS Devices with Crystalline High-K Gate Dielectrics.
In: Nanotech Northern Europe (NTNE), Helsinki, Finnland, 27.-29.03.2007, [Conference or Workshop Item]

Endres, Ralf and Stefanov, Yordan and Schwalke, Udo (2007):
Electrical Characterization of Crystalline Gd2O3 Gate Dielectric MOSFETs Fabricated by Damascene Metal Gate Technology.
In: Microelectronics Reliability, pp. 528-531, 47, (4-5), [Online-Edition: http://dx.doi.org/10.1016/j.microrel.2007.01.018],
[Article]

Zaunert, Florian and Endres, Ralf and Stefanov, Yordan and Schwalke, Udo (2007):
Evaluation of MOSFETs with Crystalline High-K Gate-Dielectrics: Device Simulation and Experimental Data.
In: Journal of Telecommunications and Technology, pp. 78-85, 2, [Online-Edition: http://www.nit.eu/czasopisma/JTIT/2007/2/78.pdf],
[Article]

Endres, Ralf and Stefanov, Yordan and Schwalke, Udo (2006):
Electrical Performance of Damascene Metal Gate MOSFETs with Crystalline Gd2O3 Gate Dielectric.
In: 37th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, 07.-09.12.2006, [Conference or Workshop Item]

Endres, Ralf and Stefanov, Yordan and Schwalke, Udo (2006):
Damascene Metal Gate Technology for Gentle Integration of Crystalline High-K-Gate Dielectrics.
In: ECS Transactions, pp. 297-301, 3, (2), [Online-Edition: http://dx.doi.org/10.1149/1.2356289],
[Article]

Endres, Ralf and Stefanov, Yordan and Wessely, Frank and Zaunert, Florian and Schwalke, Udo (2006):
Process Damage-Free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K Gate Dielectrics.
In: 3rd International Symposium on Advanced Gate Stack Technology (ISAGST), Austin, TX, USA, 27.-29.09.2006, [Conference or Workshop Item]

Gottlob, H. D. B. and Echtermeyer, T. and Mollenhauer, T. and Schmidt, M. and Efavi, J. and Wahlbrink, T. and Lemme, L. M. and Kurz, H. and Endres, Ralf and Stefanov, Yordan and Schwalke, Udo and Czernohorsky, M. and Bugiel, E. and Fissel, A. and Osten, H. J. (2006):
Approaches to CMOS Integration of Epitaxial Gadolinium Oxide High-K Dielectrics.
In: Proceedings of the 36th European Solid-State Device Research Conference (ESSDERC), pp. 150-153, [Online-Edition: http://dx.doi.org/10.1109/ESSDER.2006.307660],
[Article]

Endres, Ralf and Stefanov, Yordan and Schwalke, Udo (2006):
Epitaxial High-K Oxide Metal Gate MOSFETs: Damascene CMP Process Integration and Electrical Results.
In: Japanese Journal of Applied Physics, [Article]

Zaunert, Florian and Endres, Ralf and Stefanov, Yordan and Schwalke, Udo (2006):
Evaluation of MOSFETs with Crystalline High-k Gate-dielectrics: Device Simulation and Experimental Data.
In: 7th Symposium Diagnostics & Yield - Advanced Silicon Devices and Technologies for ULSI Era, Warschau, Polen, 25.-28.06.2006, [Conference or Workshop Item]

Stefanov, Yordan and Cilek, F. and Endres, Ralf and Schwalke, Udo (2005):
Alternative Optimization Techniques for Shallow Trench Isolation and Replacement Gate Technology CMP.
In: The 2nd Pacific-Rim International Conference on Planarization CMP and Its Application Technology (PacRim-CMP), Seoul, Korea, 17.-19.11.2005, [Conference or Workshop Item]

Ruland, Tino and Endres, Ralf and Schwalke, Udo (2005):
Application of Porous Silicon 2D Photonic Crystals as On-chip Interconnects.
In: European Congress on Advanced Materials and Processes (EUROMAT), Prag, Tschechien, 05.-08.09.2005, [Conference or Workshop Item]

Ruland, Tino and Endres, Ralf and Schwalke, Udo (2005):
Nanoscale Electrical Characterization of Crystalline Praseodymium Oxide High-k Gate Dielectric MOSFETs with Conductive Atomic Force Microscopy.
In: European Congress on Advanced Materials and Processes (EUROMAT), Prag, Tschechien, 05.-08.09.2005, [Conference or Workshop Item]

This list was generated on Sat Oct 19 02:25:05 2019 CEST.