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Damascene Metal Gate Technology for Damage-free Gate-Last High-K Process Integration

Endres, Ralf and Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2009):
Damascene Metal Gate Technology for Damage-free Gate-Last High-K Process Integration.
In: 3rd International Conference on Signals, Circuits and Systems (SCS), [Online-Edition: http://dx.doi.org/10.1109/ICSCS.2009.5414209],
[Article]

Item Type: Article
Erschienen: 2009
Creators: Endres, Ralf and Krauss, Tillmann and Wessely, Frank and Schwalke, Udo
Title: Damascene Metal Gate Technology for Damage-free Gate-Last High-K Process Integration
Language: English
Journal or Publication Title: 3rd International Conference on Signals, Circuits and Systems (SCS)
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Event Title: 3rd International Conference on Signals, Circuits and Systems (SCS)
Event Location: Djerba, Tunesien
Event Dates: 06.-08.11.2009
Date Deposited: 28 Jun 2011 14:09
Official URL: http://dx.doi.org/10.1109/ICSCS.2009.5414209
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