Krauss, Tillmann Adrian (2019)
Planar Electrostatically Doped Reconfigurable Schottky Barrier FDSOI Field-Effect Transistor Structures.
Technische Universität Darmstadt
Dissertation, Erstveröffentlichung

Noll, Dennis ; Schwalke, Udo (2019)
Reliability issues and length dependence of nanocrystalline graphene field-effect transistors for gas sensing.
14th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS). (16.04.2019-18.04.2019)
doi: 10.1109/DTIS.2019.8734953
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo ; Noll, Dennis (2019)
Silicon-CMOS Compatible Transfer-Free Fabrication of Nanocrystalline Graphene Field-Effect Devices for Smart Gas-Sensor Applications.
Electron Devices Technology and Manufacturing Conference (EDTM). Singapore, Singapore (12.03.2019-15.03.2019)
doi: 10.1109/EDTM.2019.8731320
Konferenzveröffentlichung, Bibliographie

Noll, Dennis ; Schwalke, Udo (2019)
Transfer-free fabrication of nanocrystalline graphene field-effect transistor gas sensor arrays.
1&2DM 2019. Tokyo, Japan (28.01.2019-29.01.2019)
Konferenzveröffentlichung, Bibliographie

Noll, Dennis (2019)
Nanokristalline Graphen-Feldeffekttransistoren für Gassensor-Anwendungen.
Technische Universität Darmstadt
Dissertation, Erstveröffentlichung

Keyn, Martin (2018)
Untersuchung einer Herstellungstechnologie für Feldeffekt-Transistoren auf Basis von Kohlenstoffnanoröhren.
Technische Universität Darmstadt
Dissertation, Erstveröffentlichung

Noll, Dennis ; Schwalke, Udo (2018)
Selectivity and Cross-Sensitivity of Transfer-Free Fabricated Nanocrystalline Graphene Field-Effect Sensors.
AIMES 2018 /234th Meeting of the Electrochemical Society (ECS). Cancun, Mexico (30.09.2018-04.10.2018)
doi: 10.1149/08615.0013ecst
Konferenzveröffentlichung, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2018)
Reconfigurable electrostatically doped 2.5-gate planar field-effect transistors for dopant-free CMOS.
Taormina, Sizilien (09.04.2018-12.04.2018)
doi: 10.1109/DTIS.2018.8368567
Konferenzveröffentlichung, Bibliographie

Noll, Dennis ; Hönicke, Philip ; Kayser, Yves ; Wagner, Stefan ; Beckhoff, Burkhard ; Schwalke, Udo (2018)
Transfer-Free In Situ CCVD Grown Nanocrystalline Graphene for Sub-PPMV Ammonia Detection.
In: ECS Journal of Solid State Science and Technology, 7 (7)
doi: 10.1149/2.0171807jss
Artikel, Bibliographie

Noll, Dennis ; Schwalke, Udo (2018)
Ammonia sensors based on in situ fabricated nanocrystalline graphene field-effect devices.
13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS). (10.04.2018-12.04.2018)
doi: 10.1109/DTIS.2018.8368566
Konferenzveröffentlichung, Bibliographie

Noll, Dennis ; Schwalke, Udo (2018)
Direct fabrication of nanocrystalline graphene field effect transistors for gas detection.
Workshop: Graphen und weitere 2D Materialien. Germany, Dresden (02.02.2018-02.02.2018)
Konferenzveröffentlichung, Bibliographie

Noll, Dennis ; Schwalke, Udo (2018)
Yield and Reliability of Nanocrystalline Graphene Field-Effect Gas Sensors.
AiMES 2018 -The Americas International Meeting on Electrochemistry and Solid State Science. Cancun, Mexico (30.09.2018-04.10.2018)
doi: 10.1149/08609.0041ecst
Konferenzveröffentlichung, Bibliographie

Noll, Dennis ; Schwalke, Udo (2018)
Selectivity and Cross-Sensitivity of Transfer-Free Fabricated Nanocrystalline Graphene Field-Effect Sensors.
In: ECS Transactions, 86 (15)
doi: 10.1149/08615.0013ecst
Artikel, Bibliographie

Noll, Dennis ; Schwalke, Udo (2018)
Selectivity and Cross-Sensitivity of Transfer-Free Fabricated Nanocrystalline Graphene Field-Effect Gas Sensors.
In: ECS Transactions, 86 (15)
Artikel, Bibliographie

Noll, Dennis ; Hönicke, Philip ; Beckhoff, Burkhard ; Schwalke, Udo (2018)
Ammonia Sensing Using Transfer-Free in situ CCVD Grown Nanocrystalline Graphene Field Effect Transistors.
233rd Meeting of the Electrochemical Society (ECS). USA, Seattle, Washington (13.05.2018-17.05.2018)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo ; Noll, Dennis (2018)
Transfer-free mass-fabrication of graphene field-effect gas sensors.
AN-EM 2018 13th International Conference on Advanced Nano and Energy Materials. Perth, Australia (12.12.2018-14.12.2018)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo ; Krauss, Tillmann ; Wessely, Frank
Hrsg.: Prof. Schwalke, Udo (2017)
Field effect transistor arrangement.
Norm, Patent, Standard, Bibliographie

Schwarz, Mike ; Calvet, Laurie E. ; Snyder, John P. ; Krauss, Tillmann ; Schwalke, Udo ; Kloes, Alexander (2017)
On the Physical Behavior of Cryogenic IV and III-V Schottky Barrier MOSFET Devices.
In: IEEE Transactions on Electron Devices, 99
Artikel, Bibliographie

Noll, Dennis ; Schwalke, Udo (2017)
Feasibility Study of in-situ Grown Nanocrystalline Graphene for Humidity Sensing.
12th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS). Palma de Mallorca, Spain (04.04.2017-06.04.2017)
Konferenzveröffentlichung, Bibliographie

Noll, Dennis ; Schwalke, Udo (2017)
Evaluation of Metal Catalysts for Growth of Nanocrystalline Graphene for Gas Sensing.
E-MRS 2017 Spring Meeting. Strasbourg, France (22.05.2017-26.05.2017)
Konferenzveröffentlichung, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2017)
Fabrication and Simulation of Electrically Reconfigurable Dual Metal-gate Planar Field-effect Transistors for Dopant-free CMOS.
In: 12th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Buchkapitel, Bibliographie

Noll, Dennis ; Schwalke, Udo (2016)
Enhancement of the Extent of In Situ Transfer-Free Few-Layer Graphene by Solid Carbon Source for Use in Gas Sensor Applications.
PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS). Honolulu, Hawaii, USA (02.10.2016-07.10.2016)
Konferenzveröffentlichung, Bibliographie

Keyn, Martin ; Krauss, Tillmann ; Kramer, Andreas ; Schwalke, Udo (2016)
Evaluation of Different High Κ Materials for In situ Growth of Carbon Nanotubes.
PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS). Honolulu, Hawaii, USA (02.10.2016-07.10.2016)
Konferenzveröffentlichung, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2016)
Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications.
PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS). Honolulu, Hawaii, USA (02.10.2016-07.10.2016)
Konferenzveröffentlichung, Bibliographie

Hrsg.: Schwalke, Udo ; Baumgart, Helmut ; Hahn, Horst ; Kreupl, Franz ; Lemme, Max Christian ; Li, Qiliang ; Orlowski, Marius K. ; Rotkin, Slava V. (2016)
Emerging Nanomaterials and Devices : Proceedings of a meeting ; PRiME 2016.
Emerging Nanomaterials and Devices. Honolulu, Hawaii, USA (02.10.2016-07.10.2016)
Konferenzveröffentlichung, Bibliographie

Noll, Dennis ; Schwalke, Udo (2016)
Enhancement of the Extent of In Situ Transfer-Free Few-Layer Graphene by Solid Carbon Source for Use in Gas Sensor Applications.
In: ECS Transactions, 75 (13)
Artikel, Bibliographie

Keyn, Martin ; Krauss, Tillmann ; Kramer, Andreas ; Schwalke, Udo (2016)
Evaluation of Different High Κ Materials for In situ Growth of Carbon Nanotubes.
In: ECS Transactions, 75 (13)
Artikel, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2016)
Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications.
In: ECS Transactions, 75 (13)
Artikel, Bibliographie

Wessely, Pia Juliane ; Schwalke, Udo
Hrsg.: Aliofkhazraei, Mahmood ; Ali, Nasar ; Milne, William I. ; Ozkan, Cengiz S. ; Mitura, Stanislaw ; Gervasoni, Juana L. (2016)
Graphene Transistors: Silicon CMOS-Compatible Processing for Applications in Nanoelectronics.
In: Graphene Science Handbook: Size-Dependent Properties
Buchkapitel, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2016)
Electrically Reconfigurable Dual Metal-gate Planar Field-effect Transistor for Dopant-free CMOS.
International Conference on Micro & Nano Electronic Systems. Leipzig, Germany (21.03.2016-24.03.2016)
Konferenzveröffentlichung, Bibliographie

Noll, Dennis ; Schwalke, Udo (2016)
PMMA-enhancement of The Lateral Growth of Transfer-free In Situ CCVD Grown Graphene.
13th International Multi-Conference on Systems, Signals & Devices (SSD). (21.03.2016-24.03.2016)
Konferenzveröffentlichung, Bibliographie

Noll, Dennis ; Schwalke, Udo (2016)
Investigation of Transfer-free Catalytic CVD Graphene on SiO2 by Means of Conductive Atomic Force Microscopy.
11th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS). Istanbul, Turkey (12.04.2016-14.04.2016)
doi: 10.1109/DTIS.2016.7483899
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo (2015)
Computation Beyond Moore's Law: Adaptive Field-Effect Devices for Reconfigurable Logic and Hardware-Based Neural Networks.
International Conference on Computing Communication and Security 2015. Pointe aux Piments, Mauritius (04.12.2015-05.12.2015)
doi: 10.1109/CCCS.2015.7374177
Konferenzveröffentlichung, Bibliographie

Keyn, Martin ; Schwalke, Udo (2015)
Formation Process of Nickel Nano-clusters for Catalytic Growth of Carbon Nanotubes for Use in Field-Effect Transistors.
In: ECS Transactions, 64 (38)
Artikel, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2015)
Electrostatically Doped Planar Field-Effect Transistor for High Temperature Applications.
In: ECS Journal of Solid State Science and Technology, 4 (5)
Artikel, Bibliographie

Noll, Dennis ; Schwalke, Udo (2015)
Silicon CMOS Compatible In-situ CCVD Growth of Graphene on Silicon Nitride.
10th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS). Naples, Italy (21.04.2015-23.04.2015)
doi: 10.1109/DTIS.2015.7127387
Konferenzveröffentlichung, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2014)
Feldeffekttransistor-Anordnung.
Norm, Patent, Standard, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2014)
Field Effect Transistor Arrangement.
Norm, Patent, Standard, Bibliographie

Keyn, Martin ; Schwalke, Udo (2014)
Highly Parallelized Carbon Nanotubes for Field-effect Device Applications.
226th Meeting of the Electrochemical Society (ECS). Cancún, Mexico (05.10.2014-10.10.2014)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo ; Wessely, Pia Juliane (2014)
Improved Bilayer Graphene Transistors for Applications in Nanoelectronics.
226th Meeting of the Electrochemical Society (ECS). Cancún, Mexico (05.10.2014-10.10.2014)
Konferenzveröffentlichung, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2014)
Novel Electrostatically Doped Planar Field-effect Transistor for High Temperature Applications.
In: ECS Transactions, 64 (12)
Artikel, Bibliographie

Sivieri, Victor de Bodt ; Wessely, Pia Juliane ; Schwalke, Udo ; Agopian, Paula G. D. ; Martino, João A. (2014)
Graphene for Advanced Devices Applications.
SBMicro 2014 - 29th Symposium on Microeletronics Technology and Devices. Aracaju, Sergipe, Brazil (01.09.2014-05.09.2014)
Konferenzveröffentlichung, Bibliographie

Keyn, Martin ; Kramer, Andreas ; Schwalke, Udo (2014)
Dependence of Annealing Temperature on Cluster Formation during In Situ Growth of CNTs.
In: 9th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2014)
An Electrostatically Doped Planar Device Concept.
In: 9th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Wessely, Pia Juliane ; Schwalke, Udo (2014)
2nd Generation Bilayer Graphene Transistors for Applications in Nanoelectronics.
In: 9th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Wessely, Pia Juliane ; Schwalke, Udo (2014)
In-Situ CCVD Grown Bilayer Graphene Transistors for Applications in Nanoelectronics.
In: Applied Surface Science, 291
Artikel, Bibliographie

Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann (2013)
Simulation and Experimental Verification: Dopant-free Si-Nanowire CMOS Technology on Silicon-on-Insulator Material.
8th International Design and Test Symposium (IDT). Marrakesh, Morocco (16.12.2013-18.12.2013)
Konferenzveröffentlichung, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2013)
Reconfigurable CMOS with Undoped Silicon Nanowire Midgap Schottky-barrier FETs.
In: Microelectronics Journal, 44 (12)
Artikel, Bibliographie

Schwalke, Udo (2013)
The Future of Nanoelectronics is Black: From Silicon to Hexagonal Carbon.
Africon 2013. Mauritius (09.09.2013-12.09.2013)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo ; Krauss, Tillmann ; Wessely, Frank
Hrsg.: Prof. Schwalke, Udo (2013)
Feldeffekttransistor-Anordnung.
Norm, Patent, Standard, Bibliographie

Wessely, Pia Juliane ; Schwalke, Udo (2013)
Graphene Transistors: Silicon CMOS Compatible Processing for Applications in Nanoelectronics.
E-MRS 2013 Spring Meeting. Strasbourg, France (27.05.2012-30.05.2012)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann (2013)
Dopant-free CMOS on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications.
In: ECS Transactions, 53 (5)
Artikel, Bibliographie

Wessely, Pia Juliane ; Schwalke, Udo (2013)
Transfer-free Bilayer Graphene FETs: Application as Memory Devices.
In: ECS Transactions, 53 (1)
Artikel, Bibliographie

Wessely, Pia Juliane (2013)
Graphen-Transistoren: Silizium CMOS kompatible Herstellung für Anwendungen in der Nanoelektronik.
Technische Universität Darmstadt
Dissertation, Erstveröffentlichung

Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann (2013)
CMOS without Doping on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications.
In: ECS Journal of Solid State Science and Technology, 2 (6)
Artikel, Bibliographie

Keyn, Martin ; Schwalke, Udo (2013)
Multi-CNTFETs for Power Device Applications: Investigation of CCVD Grown CNTs by Means of Atomic Force Microscopy.
In: 8th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Wessely, Pia Juliane ; Schwalke, Udo (2013)
Transfer-Free Grown Bilayer Graphene Memory Devices.
In: 8th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2013)
Transfer-free grown bilayer graphene transistors for digital applications.
In: Solid-State Electronics, 81
Artikel, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012)
In-Situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio in Silicon CMOS Compatible Processing.
In: Advances in Science and Technology, 77
Artikel, Bibliographie

Keyn, Martin ; Wessely, Frank ; Schwalke, Udo (2012)
Large-scale Parallelization of In Situ CCVD Grown Carbon Nanotubes for Power Devices.
Junior Euromat 2012. Lausanne, Switzerland (23.07.2012-27.07.2012)
Konferenzveröffentlichung, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012)
CCVD Assisted and Transfer-free Fabrication of Graphene Devices.
Graphene Week 2012. Delft, Netherlands (04.06.2012-08.06.2012)
Konferenzveröffentlichung, Bibliographie

Keyn, Martin ; Wessely, Pia Juliane ; Wessely, Frank ; Rispal, Lorraine ; Palm, Johannes ; Schwalke, Udo (2012)
Feasibility Study on In Situ CCVD Grown CNTs for Field-Effect Power Device Applications.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012)
On/Off-Current Ratios of Transfer-free Bilayer Graphene FETs as a Function of Temperature.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2012)
Dopant-free CMOS: A New Device Concept.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Schwalke, Udo ; Wessely, Pia Juliane ; Wessely, Frank ; Keyn, Martin ; Rispal, Lorraine (2012)
Nanoelectronics: From Silicon to Graphene.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Schwalke, Udo (2012)
Nanoelectronics: From Silicon to Carbon.
7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS). Gammarth, Tunisia (16.05.2012-18.05.2012)
Konferenzveröffentlichung, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012)
On/Off-Current Ratios of In-Situ CCVD Grown Bilayer Graphene FETs as a Function of Temperature.
221th Meeting of the Electrochemical Society. Seattle, WA, USA (06.05.2012-11.05.2012)
Konferenzveröffentlichung, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012)
Device Characteristics of In Situ CCVD Grown Bilayer Graphene FETs at Elevated Temperatures.
In: ECS Transactions, 45 (4)
Artikel, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo ; Riedinger, Bernadette (2012)
Transfer-free Fabrication of Graphene Transistors.
In: Journal of Vacuum Science & Technology B, 30 (3)
Artikel, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2012)
Virtually Dopant-free CMOS: Midgap Schottky-barrier Nanowire Field-Effect-Transistors for High Temperature Applications.
In: Solid-State Electronics, 74
Artikel, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo (2012)
In-Situ CCVD Silicon CMOS Compatible Processing of Bilayer Graphene Transistors with Ultra-High On/Off-Current Ratio.
Spring Meeting & Exhibit 2012 of the Materials Research Society. San Francisco, CA, USA (09.04.2012-13.04.2012)
Konferenzveröffentlichung, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012)
Transfer-free Grown Bilayer Graphene Transistors with Ultra-high On/Off-Current Ratio.
Graphene 2012. Brussels, Belgium (10.04.2012-13.04.2012)
Konferenzveröffentlichung, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2012)
CMOS without Doping: Multi-gate Silicon-Nanowire Field-Effect-Transistors.
In: Solid-State Electronics, 70
Artikel, Bibliographie

Stefanov, Yordan (2012)
The Application of Atomic Force Microscopy in Semiconductor Technology - Towards High-K Gate Dielectric Integration.
Technische Universität Darmstadt
Dissertation, Erstveröffentlichung

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012)
Hysteresis of In Situ CCVD Grown Graphene Transistors.
In: Electrochemical and Solid-State Letters, 15 (4)
Artikel, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo (2012)
In Situ CCVD Grown Bilayer Graphene Transistor.
In: ECS Transactions, 41 (40)
Artikel, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Beckmann, Karsten ; Riedinger, Bernadette ; Schwalke, Udo (2011)
Silicon-CMOS Compatible In-situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio.
In: Physica E: Low-dimensional Systems and Nanostructures, 44 (7-8)
Artikel, Bibliographie

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2011)
Damascene TiN-Gd2O3-Gate Stacks: Gentle Fabrication and Electrical Properties.
In: Microelectronic Engineering, 88 (12)
Artikel, Bibliographie

Schwalke, Udo ; Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Keyn, Martin ; Rispal, Lorraine (2011)
In-situ CCVD Growth of Hexagonal Carbon for CMOS-Compatible Nanoelectronics: From Nanotube Field-Effect Devices to Graphene Transistors.
12th Trends in Nanotechnology International Conference (TNT). Tenerife, Canary Islands, Spain (21.11.2011-25.11.2011)
Konferenzveröffentlichung, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2011)
CMOS without Doping: Midgap Schottky-Barrier Nanowire Field-Effect-Transistors for High-Temperature Applications.
In: Proceedings of the 41th European Solid-State Device Research Conference (ESSDERC)
Artikel, Bibliographie

Wessely, Frank (2011)
CMOS ohne Dotierstoffe: Neuartige siliziumbasierte Nanodraht-Feldeffekt-Bauelemente.
Technische Universität Darmstadt
Dissertation, Erstveröffentlichung

Ginsel, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo (2011)
Production of Graphene Layers by Means of CVD for Field Effect Device Fabrication.
ImageNano. Bilbao, Spanien (11.04.2011-14.04.2011)
Konferenzveröffentlichung, Bibliographie

Ginsel, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo (2011)
CVD Assisted Fabrication of Graphene Layers for Field Effect Device Fabrication.
In: 6th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Endres, Ralf (2011)
Gate-Last-Prozessintegration und elektrische Bewertung von High-k-Dielektrika und Metall-Elektroden in MOS-Bauelementen.
Technische Universität Darmstadt
Dissertation, Erstveröffentlichung

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2011)
Multi-Gate Voltage Selectable Silicon-Nanowire-FETs.
In: Proceedings of the Seventh Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EuroSOI)
Artikel, Bibliographie

Schwalke, Udo ; Rispal, Lorraine (2010)
Non-Volatile Memory Effect in Carbon Nanotube Field-Effect Transistors: Charge Trapping in AlxOy High-k Dielectrics Made from Sacrificial Metal Catalyst.
41st IEEE Semiconductor Interface Specialists Conference (SISC). San Diego, CA, USA (02.12.2010-04.12.2010)
Konferenzveröffentlichung, Bibliographie

Rispal, Lorraine ; Ginsel, Pia Juliane ; Schwalke, Udo (2010)
In Situ Growth of Carbon for Nanoelectronics: From Nanotubes to Graphene.
In: ECS Transactions, 33 (9)
Artikel, Bibliographie

Endres, Ralf ; Gottlob, H. D. B. ; Schmidt, M. ; Schwendt, D. ; Osten, H. J. ; Schwalke, Udo (2010)
Crystalline Gadolinium Oxide: A Promising High-K Candidate for Future CMOS Generations.
In: ECS Transactions, 33 (3)
Artikel, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Endres, Ralf ; Schwalke, Udo (2010)
Novel Application of Wafer-bonded MultiSOI: Junctionless Nanowire Transistors for CMOS Logic.
In: ECS Transactions, 33 (4)
Artikel, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2010)
Dopant-Independent and Voltage-Selectable Silicon-Nanowire-CMOS Technology for Reconfigurable Logic Applications.
In: Proceedings of the 40th European Solid-State Device Research Conference (ESSDERC)
Artikel, Bibliographie

Schwalke, Udo (2010)
Kohlenstoff: Die Zukunft der Nanoelektronik?
Inno.CNT-Jahreskongress. Marl, Deutschland (20.01.2010-20.01.2010)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo (2010)
Nanoscale Electrical Characterization at the Wafer Level: Defects in High-k Dielectrics.
VDE-Fachgruppentagung 8.5.6 - fWLR / Wafer Level Reliability. Erfurt, Deutschland (17.05.2010-18.05.2010)
Konferenzveröffentlichung, Bibliographie

Endres, Ralf ; Schwalke, Udo (2010)
Prozessintegration und elektrische Charakterisierung von kristallinen Gd2O3 High-k Dielektrika.
VDE-Fachgruppentagung 8.5.6 - fWLR / Wafer Level Reliability. Erfurt, Deutschland (17.05.2010-18.05.2010)
Konferenzveröffentlichung, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Endres, Ralf ; Schwalke, Udo (2010)
Dopant Free Multi-Gate Silicon Nanowire CMOS-Inverter on SOI Substrate.
In: 5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Schwalke, Udo (2010)
Kohlenstoff: Die Zukunft der Nanoelektronik?
ZVEI-Fachgruppensitzung "Halbleiter Bauelemente". Hanau, Deutschland (24.02.2010-24.02.2010)
Konferenzveröffentlichung, Bibliographie

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2009)
Gentle Gate Last Integration and Electrical Characterization of TiN/Gd2O3/Si MOS Capacitors and Field Effect Transistors.
40th IEEE Semiconductor Interface Specialists Conference (SISC). Arlington, VA, USA (03.12.2009-05.12.2009)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo (2009)
Kohlenstoff-Nanoröhren als elektronische Bauteile für biomedizinische Sensor-Anwendungen.
6. Nanotechnologieforum Hessen. Hanau, Deutschland (26.11.2009-26.11.2009)
Konferenzveröffentlichung, Bibliographie

Zaunert, Florian (2009)
Simulation und vergleichende elektrische Bewertung von planaren und 3D-MOS-Strukturen mit high-k Gate-Dielektrika.
Technische Universität Darmstadt
Dissertation, Erstveröffentlichung

Rispal, Lorraine (2009)
Large Scale Fabrication of Field-Effect Devices based on In Situ Grown Carbon Nanotubes.
Technische Universität Darmstadt
Dissertation, Erstveröffentlichung

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2009)
Damascene Metal Gate Technology for Damage-free Gate-Last High-K Process Integration.
In: 3rd International Conference on Signals, Circuits and Systems (SCS)
Artikel, Bibliographie

Wessely, Frank ; Endres, Ralf ; Schwalke, Udo (2009)
Scaling of the Damascene Metal Gate Integration Process via Electron Beam Lithography.
In: 3rd International Conference on Signals, Circuits and Systems (SCS)
Artikel, Bibliographie

Rispal, Lorraine ; Schwalke, Udo (2009)
Carbon: The Future of Nanoelectronics.
In: 3rd International Conference on Signals, Circuits and Systems (SCS)
Artikel, Bibliographie

Rispal, Lorraine ; Schwalke, Udo (2009)
Carbon Nanotube Memory Devices: Mass-Fabrication and Electrical Characterization.
216th Meeting of The Electrochemical Society (ECS). Wien, Österreich (04.10.2009-09.10.2009)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo (2009)
Nano-Electronics: From Top-Down to Bottom-Up?!
8th Symposium Diagnostics & Yield, Advanced Silicon Devices and Technologies for ULSI Era. Warschau, Polen (22.06.2009-24.06.2009)
Konferenzveröffentlichung, Bibliographie

Lemme, M. C. ; Gottlob, H. D. B. ; Echtermeyer, T. ; Kurz, H. ; Endres, Ralf ; Schwalke, Udo ; Czernohorsky, M. ; Osten, H. J. (2009)
Complementary Metal Oxide Semiconductor Integration of Epitaxial Gd2O3.
In: Journal of Vacuum Science & Technology B, 27 (1)
Artikel, Bibliographie

Schwalke, Udo (2009)
Yield, Reliability and Variability in the Nano-Era: Will Existing Approaches Survive?
14th IEEE European Test Symposium. Sevilla, Spanien (25.05.2009-29.05.2009)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo (2009)
Damscene Metal Gate Technology: A Solution to High-K Gate Stack Challenges?
DGM Arbeitskreis "Materialien für elektronische Anwendungen". Berlin, Deutschland (20.02.2009-20.02.2009)
Konferenzveröffentlichung, Bibliographie

Endres, Ralf ; Wessely, Frank ; Schwalke, Udo (2008)
CMP-based Gate Last High-K Integration.
In: Proceedings of the 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE)
Artikel, Bibliographie

Schwalke, Udo (2008)
Nanotechnology: The Power of Small.
In: 2nd International Conference on Signals, Circuits & Systems (SCS)
Artikel, Bibliographie

Rispal, Lorraine ; Schwalke, Udo (2008)
Large-Scale In Situ Fabrication of Voltage-Programmable Dual-Layer High-k Dielectric Carbon Nanotube Memory Devices With High On/Off Ratio.
In: IEEE Electron Device Letters, 29 (12)
Artikel, Bibliographie

Schwalke, Udo ; Rispal, Lorraine (2008)
Mass-Fabrication of Voltage-Programmable Non-Volatile Carbon Nanotube Memory Devices.
214th Meeting of The Electrochemical Society (ECS). Honolulu, HI, USA (12.10.2008-17.10.2008)
Konferenzveröffentlichung, Bibliographie

Lemme, M. C. ; Gottlob, H. D. B. ; Echtermeyer, T. ; Kurz, H. ; Endres, Ralf ; Schwalke, Udo ; Czernohorsky, M. ; Osten, H. J. (2008)
CMOS Integration of Epitaxial Gd2O3.
15th Workshop on Dielectrics in Microelectronics (WoDiM). Bad Saarow, Deutschland (23.06.2008-25.06.2008)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo (2008)
Field-Effect Controlled Single-Walled Carbon Nanotube Devices for Biomedical Sensor Applications.
3rd International Conference on Smart Materials, Structures & Systems (CIMTEC). Acireale, Italien (08.06.2008-13.06.2008)
Konferenzveröffentlichung, Bibliographie

Rispal, Lorraine ; Tschischke, T. ; Yang, Hongyu ; Schwalke, Udo (2008)
Mass-Production of Passivated CNTFETs: Statistics and Gate-Field Dependence of Hysteresis Effect.
In: ECS Transactions, 13 (14)
Artikel, Bibliographie

Schwalke, Udo ; Rispal, Lorraine (2008)
Fabrication of Ultra-Sensitive Carbon Nanotube Field-Effect Sensors (CNTFES) for Biomedical Applications.
In: ECS Transactions, 13 (22)
Artikel, Bibliographie

Endres, Ralf ; Stefanov, Yordan ; Wessely, Frank ; Zaunert, Florian ; Schwalke, Udo (2008)
Process Damage-free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K.
In: Microelectronic Engineering, 85 (1)
Artikel, Bibliographie

Rispal, Lorraine ; Schwalke, Udo (2008)
Structural and Electrical Characterization of Carbon Nanotube Field-Effect Transistors Fabricated by Novel Self-aligned Growth Method.
In: 3rd International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Wirbeleit, F. ; Pedrero, V. ; Thron, D. ; Stephan, R. ; Schwalke, Udo (2008)
Optical Detection of SiN Stress Layer Induced Carrier Mobility Enhancement in Silicon.
Material Research Society (MRS). San Francisco, CA, USA (24.03.2008-28.03.2008)
Konferenzveröffentlichung, Bibliographie

Endres, Ralf ; Schwalke, Udo (2008)
Damascene Metal Gate Technology for Damage-Free High-k Process Integration.
In: Proceedings of the 7th International Semiconductor Technology Conference (ISTC)
Artikel, Bibliographie

Schwalke, Udo (2008)
Damascene Metal Gate Technology: A Solution to High-K Gate Stack Challenges?
DPG Spring Meeting. Berlin, Deutschland (25.02.2008-29.02.2008)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo (2008)
Novel Field-Effect Controlled Single-Walled Carbon Nanotube Network Devices for Biomediccal Sensor Applications.
In: Conference Proceedings of Biodevices 2008
Artikel, Bibliographie

Rispal, Lorraine ; Tschischke, T. ; Yang, Hongyu ; Schwalke, Udo (2008)
Polymethyl Methacrylate Passivation of Carbon Nanotube Field-Effect Transistors: Novel Self-aligned Process and Influence on Device Transfer Characteristic Hysteresis.
In: Japanese Journal of Applied Physics, 47 (4)
Artikel, Bibliographie

Zaunert, Florian ; Endres, Ralf ; Schwalke, Udo (2007)
Device and Stress Simulation of MOSFETs with Crystalline High-k Gate-Dielectrics Manufactured with Replacement Gate Process.
In: Proceedings of Semiconductor Advances for Future Electronics (SAFE) 2007
Artikel, Bibliographie

Endres, Ralf ; Schwalke, Udo (2007)
Damascene Metal Gate Technology: A Front-End CMP Based Universal Platform for High-k Evaluation at the Device Level.
In: Proceedings of the International Conference on Planarization Technology 2007 (ICPT)
Artikel, Bibliographie

Stefanov, Yordan ; Schwalke, Udo
Hrsg.: Li, Yuzhuo (2007)
Shallow Trench Isolation Chemical Mechanical Planarization.
In: Microelectronic Applications of Chemical Mechanical Planarization
Buchkapitel, Bibliographie

Hurley, P. K. ; Pijolat, M. ; Cherkaoui, K. ; O'Connor, E. ; O'Connell, D. ; Negara, M. A. ; Lemme, M. C. ; Gottlob, D. B. ; Schmidt, M. ; Stegmaier, K. ; Schwalke, Udo ; Hall, S. ; Buiu, O. ; Engstrom, O. ; Newcomb, S. B. (2007)
The Formation and Characterisation of Lanthanum Oxide Based Si/High-k/NiSi Gate Stacks by Electron-Beam Evaporation: An Examination of In-Situ Amorphous Silicon Capping and NiSi Formation.
In: ECS Transactions, 11 (4)
Artikel, Bibliographie

Schwalke, Udo (2007)
Application of Scanning Probe Microscopy Techniques for Structural and Electrical Characterization of Dielectrics, Carbon Nanotubes and Nanoelectronic Devices.
In: ECS Transactions, 11 (3)
Artikel, Bibliographie

Rispal, Lorraine ; Hang, H. ; Heller, Rudolf ; Hess, Gisela ; Tzschöckel, Gerhard ; Schwalke, Udo (2007)
Self-Aligned Fabrication Process Based on Sacrificial Catalyst for Pd-Contacted Carbon Nanotube Field-Effect Transistors.
In: ECS Transactions, 11 (8)
Artikel, Bibliographie

Wessely, Frank ; Rispal, Lorraine ; Schwalke, Udo (2007)
Mix-and-Match Lithography Based Ultrathin-body SOI Nanowires and Schottky-S/D-FETs.
In: Proceedings of Semiconductor Advances for Future Electronics (SAFE)
Artikel, Bibliographie

Biethan, Jens-Peter ; Kammler, Thorsten ; Naumann, Andreas ; Schwalke, Udo ; Stephan, Rolf ; Trui, Bernhard (2007)
New Results in Calculating Critical Thickness and the Degree of Relaxation for Epitaxial Grown Silicon-Germanium Layers on Silicon.
In: Book of Abstracts: E-MRS Fall Meeting 2007
Artikel, Bibliographie

Rispal, Lorraine ; Yang, Hongyu ; Heller, Rudolf ; Hess, Gisela ; Tzschöckel, Gerhard ; Schwalke, Udo (2007)
Self-aligned Fabrication Process for Pd-Contacted and PMMA-Passivated Carbon Nanotube Field-Effect Transistors.
2007 International Conference on Solid State Devices and Materials (SSDM). Tsukuba, Japan (18.09.2007-21.09.2007)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo (2007)
Structural and Electrical Characterization of Dielectrics, Carbon Nanotubes and Nanoelectronic Devices by Means of Scanning Probe Microscopy.
In: ECS Transactions, 10 (1)
Artikel, Bibliographie

Wessely, Frank ; Ruland, Tino ; Schwalke, Udo (2007)
Characterization of Carbon Nanotube Field Effect Transistor (CNTFET) Fabrication Process by Atomic Force Microscopy (AFM) and Conductive-AFM.
European Congress on Advanced Materials and Processes (EUROMAT). Nürnberg, Deutschland (10.09.2007-13.09.2007)
Konferenzveröffentlichung, Bibliographie

Wessely, Frank ; Ruland, Tino ; Schwalke, Udo (2007)
Fabrication and Characterisation of Nanoscale Schottky-S/D-MOSFETs and Gated Nanowire Devices on Ultra Thin Body SOI Material.
European Congress on Advanced Materials and Processes (EUROMAT). Nürnberg, Deutschland (10.09.2007-13.09.2007)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo (2007)
Nanoelectronics: From Top-Down to Bottom-Up.
Nanotech Northern Europe (NTNE). Helsinki, Finnland (27.03.2007-29.03.2007)
Konferenzveröffentlichung, Bibliographie

Rispal, Lorraine ; Schwalke, Udo (2007)
Fabrication-Process for CNTFETs Based on Sacrificial Catalyst: Device Characterization and Conductive-AFM Measurements.
Nanotech Northern Europe (NTNE). Helsinki, Finnland (27.03.2007-29.03.2007)
Konferenzveröffentlichung, Bibliographie

Endres, Ralf ; Schwalke, Udo (2007)
Damascene Metal Gate Technology: A Novel Approach towards Nano CMOS Devices with Crystalline High-K Gate Dielectrics.
Nanotech Northern Europe (NTNE). Helsinki, Finnland (27.03.2007-29.03.2007)
Konferenzveröffentlichung, Bibliographie

Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2007)
Electrical Characterization of Crystalline Gd2O3 Gate Dielectric MOSFETs Fabricated by Damascene Metal Gate Technology.
In: Microelectronics Reliability, 47 (4-5)
Artikel, Bibliographie

Zaunert, Florian ; Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2007)
Evaluation of MOSFETs with Crystalline High-K Gate-Dielectrics: Device Simulation and Experimental Data.
In: Journal of Telecommunications and Technology, 2
Artikel, Bibliographie

Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2006)
Electrical Performance of Damascene Metal Gate MOSFETs with Crystalline Gd2O3 Gate Dielectric.
37th IEEE Semiconductor Interface Specialists Conference (SISC). San Diego, CA, USA (07.12.2006-09.12.2006)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo (2006)
Scaling Down Gate Dielectrics: From Ultra-Thin SiO2 to Crystalline High-K.
In: Proceedings of the 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE)
Artikel, Bibliographie

Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2006)
Damascene Metal Gate Technology for Gentle Integration of Crystalline High-K-Gate Dielectrics.
In: ECS Transactions, 3 (2)
Artikel, Bibliographie

Rispal, Lorraine ; Ruland, Tino ; Stefanov, Yordan ; Wessely, Frank ; Schwalke, Udo (2006)
Conductive AFM Measurements on Carbon Nanotubes and Application for CNTFET Characterization.
In: ECS Transactions, 3 (2)
Artikel, Bibliographie

Endres, Ralf ; Stefanov, Yordan ; Wessely, Frank ; Zaunert, Florian ; Schwalke, Udo (2006)
Process Damage-Free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K Gate Dielectrics.
3rd International Symposium on Advanced Gate Stack Technology (ISAGST). Austin, TX, USA (27.09.2006-29.09.2006)
Konferenzveröffentlichung, Bibliographie

Gottlob, H. D. B. ; Echtermeyer, T. ; Mollenhauer, T. ; Schmidt, M. ; Efavi, J. ; Wahlbrink, T. ; Lemme, L. M. ; Kurz, H. ; Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo ; Czernohorsky, M. ; Bugiel, E. ; Fissel, A. ; Osten, H. J. (2006)
Approaches to CMOS Integration of Epitaxial Gadolinium Oxide High-K Dielectrics.
In: Proceedings of the 36th European Solid-State Device Research Conference (ESSDERC)
Artikel, Bibliographie

Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2006)
Epitaxial High-K Oxide Metal Gate MOSFETs: Damascene CMP Process Integration and Electrical Results.
In: Japanese Journal of Applied Physics
Artikel, Bibliographie

Komaragiri, Rama Subrahmanyam (2006)
A Simulation Study on the Performance Improvement of CMOS Devices Using Alternative Gate Electrode Structures.
Technische Universität Darmstadt
Dissertation, Erstveröffentlichung

Zaunert, Florian ; Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2006)
Evaluation of MOSFETs with Crystalline High-k Gate-dielectrics: Device Simulation and Experimental Data.
7th Symposium Diagnostics & Yield - Advanced Silicon Devices and Technologies for ULSI Era. Warschau, Polen (25.06.2006-28.06.2006)
Konferenzveröffentlichung, Bibliographie

Rispal, Lorraine ; Wessely, Frank ; Stefanov, Yordan ; Ruland, Tino ; Schwalke, Udo (2006)
CMOS-compatible Fabrication Process of Carbon-Nanotube-Field-Effect Transistors.
IEEE EDS Workshop on Advanced Electron Devices. Fraunhofer-Institut IMS, Duisburg, Deutschland (13.06.2006-14.06.2006)
Konferenzveröffentlichung, Bibliographie

Barreiro, A. ; Selbmann, D. ; Pichler, T. ; Biedermann, K. ; Gemming, T. ; Rümmeli, M. H. ; Schwalke, Udo ; Büchner, B. (2006)
On the Effects of Solution and Reaction Parameters for the Aerosol-assisted CVD Growth of Long Carbon Nanotubes.
In: Applied Physics A, 82 (4)
Artikel, Bibliographie

Rispal, Lorraine ; Stefanov, Yordan ; Wessely, Frank ; Schwalke, Udo (2006)
Carbon Nanotube Transistor Fabrication Assisted by Topographical and Conductive Atomic Force Microscopy.
In: Japanese Journal of Applied Physics, 45
Artikel, Bibliographie

Marathe, Vaibhav G. ; Stefanov, Yordan ; Schwalke, Udo ; DasGupta, Nandita (2006)
Study of Pinholes in Ultrathin SiO2 by C-AFM Technique.
In: Thin Solid Films, 504 (1-2)
Artikel, Bibliographie

Stefanov, Yordan ; Cilek, F. ; Endres, Ralf ; Schwalke, Udo (2005)
Alternative Optimization Techniques for Shallow Trench Isolation and Replacement Gate Technology CMP.
The 2nd Pacific-Rim International Conference on Planarization CMP and Its Application Technology (PacRim-CMP). Seoul, Korea (17.11.2005-19.11.2005)
Konferenzveröffentlichung, Bibliographie

Stefanov, Yordan ; Singh, Ravneet ; DasGupta, Nandita ; Misra, Pankaj ; Schwalke, Udo (2005)
Conductive Atomic Force Microscopy Study of Leakage Currents Through Microscopic Structural Defects in High-K Gate Dielectrics.
In: Proceedings of The Electrochemical Society Conference "Crystalline Defects and Contamination" (ECS-DECON)
Artikel, Bibliographie

Rispal, Lorraine ; Stefanov, Yordan ; Heller, Rudolf ; Tzschöckel, Gerhard ; Hess, Gisela ; Haberle, Klaus ; Schwalke, Udo (2005)
Topographic and Conductive AFM Measurements on Carbon Nanotube Field-Effect Transistors Fabricated by In-Situ Chemical Vapor Deposition.
International Conference on Solid State Devices and Materials (SSDM). Kobe, Japan (12.09.2005-15.09.2005)
Konferenzveröffentlichung, Bibliographie

Ruland, Tino ; Endres, Ralf ; Schwalke, Udo (2005)
Application of Porous Silicon 2D Photonic Crystals as On-chip Interconnects.
European Congress on Advanced Materials and Processes (EUROMAT). Prag, Tschechien (05.09.2005-08.09.2005)
Konferenzveröffentlichung, Bibliographie

Rispal, Lorraine ; Schwalke, Udo (2005)
Carbon Nanotube Devices Integrated in the CMOS Process Using Chemical Vapour Deposition.
European Congress on Advanced Materials and Processes (EUROMAT). Prag, Tschechien (05.09.2005-08.09.2005)
Konferenzveröffentlichung, Bibliographie

Ruland, Tino ; Endres, Ralf ; Schwalke, Udo (2005)
Nanoscale Electrical Characterization of Crystalline Praseodymium Oxide High-k Gate Dielectric MOSFETs with Conductive Atomic Force Microscopy.
European Congress on Advanced Materials and Processes (EUROMAT). Prag, Tschechien (05.09.2005-08.09.2005)
Konferenzveröffentlichung, Bibliographie

Rispal, Lorraine ; Stefanov, Yordan ; Schwalke, Udo (2005)
Atomic Force Microscopy (AFM) and Electrical Characterization of Carbon Nanotube (CNT) Devices Fabricated by Chemical Vapour Deposition.
Nanoscale III. Santa Barbara, CA, USA (13.08.2005-16.08.2005)
Konferenzveröffentlichung, Bibliographie

Gottlob, H. D. B. ; Lemme, M. C. ; Mollenhauer, T. ; Wahlbrink, T. ; Efavi, J. K. ; Kurz, H. ; Stefanov, Yordan ; Haberle, Klaus ; Komaragiri, Rama Subrahmanyam ; Ruland, Tino ; Zaunert, Florian ; Schwalke, Udo (2005)
Introduction of Crystalline High-k Gate Dielectrics in a CMOS Process.
In: Journal of Non-Crystalline Solids, 351 (21-23)
Artikel, Bibliographie

Stefanov, Yordan ; Komaragiri, Rama ; Schwalke, Udo (2005)
Technological Advances for Memory Applications: Crystalline High-K Gate Dielectrics and Alternatively Doped Gates.
In: Proceedings of the 1st International Conference on Memory Technology and Design (ICMTD)
Artikel, Bibliographie

Schwalke, Udo ; Stefanov, Yordan (2005)
Process Integration and Nanometer-Scale Electrical Characterization of Crystalline High-k Gate Dielectrics.
In: Microelectronics Reliability, 45 (5-6)
Artikel, Bibliographie

Schwalke, Udo (2005)
Gate Dielectrics: Process Integration Issues and Electrical Properties.
In: Journal of Telecommunications and Technology, 1
Artikel, Bibliographie

Stefanov, Yordan ; Ruland, Tino ; Schwalke, Udo (2004)
Electrical AFM Measurements for Evaluation of Nitride Erosion in Shallow Trench Isolation Chemical Mechanical Planarization.
In: Proceedings of the MRS Fall Meeting 2004
Artikel, Bibliographie

Komaragiri, Rama Subrahmanyam ; Zaunert, Florian ; Schwalke, Udo (2004)
Gate Engineering for High-K Dielectric and Ultra-thin Gate Oxide CMOS.
11th Annual Workshop on Semiconductor Advances for Future Electronics (SAFE). Veldhoven, Niederlande (24.11.2004-25.11.2004)
Konferenzveröffentlichung, Bibliographie

Stefanov, Yordan ; Komaragiri, Rama Subrahmanyam ; Schwalke, Udo (2004)
Device Level and Nanoscale Electrical Characterization of Crystalline Praseodymium Oxide High-k Gate Dielectric MOSFETs.
In: Proceedings of the SEMATECH International Workshop on Electrical Characterization and Reliability for High-K Devices
Artikel, Bibliographie

Stefanov, Yordan ; Komaragiri, Rama Subrahmanyam ; Ruland, Tino ; Schwalke, Udo (2004)
Electrical AFM Measurements for STI CMP Erosion Evaluation.
In: Nanoscale International Conference: Abstracts
Artikel, Bibliographie

Ruland, Tino ; Stefanov, Yordan ; Rispal, Lorraine ; Schwalke, Udo (2004)
Application of Atomic Force Microscopy in Resist Structure Evaluation.
In: VDI/VDE-Gesellschaft Mess- und Automatisierungstechnik, (1860)
Artikel, Bibliographie

Stefanov, Yordan ; Hess, Gisela ; Tzschöckel, Gerhard ; Schwalke, Udo (2004)
Global and Local Charge Trapping Effects in Crystalline Praseodymium Oxide High-K Gate Dielectric MOSFETs.
In: Proceedings of the 3rd International Conference on Semiconductor Technology (ICST)
Artikel, Bibliographie

Schwalke, Udo ; Stefanov, Yordan (2004)
Process Integration and Electrical Characterization of Crystalline High-K Gate Dielectrics.
13th Workshop on Dielectrics in Microelectronics (WoDIM). Kinsale, Irland (28.06.2004-30.06.2004)
Konferenzveröffentlichung, Bibliographie

Kerber, Andreas (2004)
Methodology for Electrical Characterization of MOS Devices with Alternative Gate Dielectrics.
Technische Universität Darmstadt
Dissertation, Erstveröffentlichung

Nordmann, Alfred ; Schwalke, Udo (2004)
Die technische und gesellschaftliche Einbettung der Nanotechnik.
In: Thema Forschung, 2
Artikel, Bibliographie

Kerber, Andreas ; Cartier, E. ; Degraeve, R. ; Roussel, Ph. ; Pantisano, L. ; Kauerauf, T. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo (2004)
Charge Trapping and Dielectric Reliability of SiO2/Al2O3 Gate Stacks with TiN Electrodes.
In: Microelectronic Engineering, 72 (1-4)
Artikel, Bibliographie

Kerber, Andreas ; Cartier, E. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo (2003)
Stress Induced Charge Trapping Effects in SiO2/Al2O3 Gate Stacks with TiN Electrodes.
In: Journal of Applied Physics, 94 (10)
Artikel, Bibliographie

Schwalke, Udo ; Stefanov, Yordan ; Komaragiri, Rama Subrahmanyam ; Ruland, Tino (2003)
Electrical Characterisation of Crystalline Praseodymium Oxide High-K Gate Dielectric MOSFETs.
In: Proceedings of the 33rd European Solid State Device Research Conference (ESSDERC)
Artikel, Bibliographie

Kerber, Andreas ; Cartier, E. ; Degraeve, R. ; Roussel, Ph. ; Pantisano, L. ; Kauerauf, T. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo (2003)
Charge Trapping and Dielectric Reliability of SiO2/Al2O3 Gate Stacks with TiN Electrodes.
In: IEEE Transactions on Electron Devices, 50 (5)
Artikel, Bibliographie

Kerber, Andreas ; Cartier, E. ; Pantisano, L. ; Rosmeulen, M. ; Degraeve, R. ; Kauerauf, T. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo (2003)
Characterization of the VT Instability in SiO2/HfO2 Gate Dielectrics.
In: Proceedings of the IEEE International Reliability Physics Symposium (IRPS)
Artikel, Bibliographie

Kerber, Andreas ; Cartier, E. ; Pantisano, L. ; Degraeve, R. ; Kauerauf, T. ; Kim, Y. ; Hou, A. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo (2003)
Origin of the Threshold Voltage Instability in SiO2/HfO2 Dual Layer Gate Dielectrics.
In: IEEE Dlectron Device Letters, 24 (2)
Artikel, Bibliographie

Schwalke, Udo (2003)
Towards Nano-CMOS Technology: Trends and Challenges.
In: Proceedings of the International Workshop on Physics of Semiconductor Devices (IWPSD)
Artikel, Bibliographie

Komaragiri, Rama Subrahmanyam ; Schwalke, Udo ; Stefanov, Yordan ; Ruland, Tino (2003)
Comparison of Praseodymium Oxide Gate MOSFETs with Conventional SiO2 MOSFETs: A Simulation Study.
In: Proceedings of the International Workshop on Physics of Semiconductor Devices (IWPSD)
Artikel, Bibliographie

Kerber, Andreas ; Cartier, E. ; Pantisano, L. ; Degraeve, R. ; Kim, Y. ; Hou, A. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo (2002)
Charging Instability in n-Channel MOS-FETs with SiO2/HfO2 Gate Dielectric.
IEEE Semiconductor Interface Specialist Conference. San Diego, CA, USA (05.12.2002-07.12.2002)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo ; Boye, K. ; Haberle, Klaus ; Heller, Rudolf ; Hess, Gisela ; Müller, Gudrun ; Ruland, Tino ; Tzschöckel, Gerhard ; Osten, H. J. ; Fissel, A. ; Müssig, H.-J. (2002)
Process Integration of Crystalline Pr2O3 High-k Gate Dielectrics.
In: Proceedings of 32nd European Solid State Device Research Conference (ESSDERC)
Artikel, Bibliographie

Schwalke, Udo (2001)
Progress in Device Isolation Technology.
In: Microelectronis Reliability, 41 (4)
Artikel, Bibliographie

Schwalke, Udo ; Pölzl, Martin ; Sekinger, Thomas ; Kerber, Martin (2001)
Ultra-Thick Gate Oxides: Charge Generation and Its Iimpact on Reliability.
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