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Process Integration and Nanometer-Scale Electrical Characterization of Crystalline High-k Gate Dielectrics

Schwalke, Udo and Stefanov, Yordan (2005):
Process Integration and Nanometer-Scale Electrical Characterization of Crystalline High-k Gate Dielectrics.
In: Microelectronics Reliability, pp. 790-793, 45, (5-6), [Online-Edition: http://dx.doi.org/10.1016/j.microrel.2004.11.047],
[Article]

Item Type: Article
Erschienen: 2005
Creators: Schwalke, Udo and Stefanov, Yordan
Title: Process Integration and Nanometer-Scale Electrical Characterization of Crystalline High-k Gate Dielectrics
Language: English
Journal or Publication Title: Microelectronics Reliability
Volume: 45
Number: 5-6
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Institute for Semiconductor Technology and Nano-Electronics
Date Deposited: 20 Nov 2008 08:19
Official URL: http://dx.doi.org/10.1016/j.microrel.2004.11.047
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