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Einträge mit Organisationseinheit "18 Fachbereich Elektrotechnik und Informationstechnik > Institut für Halbleitertechnik und Nanoelektronik"

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Anzahl der Einträge auf dieser Ebene: 161.

B

Biethan, Jens-Peter ; Kammler, Thorsten ; Naumann, Andreas ; Schwalke, Udo ; Stephan, Rolf ; Trui, Bernhard :
New Results in Calculating Critical Thickness and the Degree of Relaxation for Epitaxial Grown Silicon-Germanium Layers on Silicon.
In: Book of Abstracts: E-MRS Fall Meeting 2007 pp. 214-215.
[Artikel], (2007)

Barreiro, A. ; Selbmann, D. ; Pichler, T. ; Biedermann, K. ; Gemming, T. ; Rummeli, M. H. ; Schwalke, Udo ; Buchner, B. :
On the Effects of Solution and Reaction Parameters for the Aerosol-assisted CVD Growth of Long Carbon Nanotubes.
[Online-Edition: http://dx.doi.org/10.1007/s00339-005-3436-5]
In: Applied Physics A, 82 (4) pp. 719-725.
[Artikel], (2006)

E

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
Damascene TiN-Gd2O3-Gate Stacks: Gentle Fabrication and Electrical Properties.
[Online-Edition: http://dx.doi.org/10.1016/j.mee.2010.05.013]
In: Microelectronic Engineering, 88 (12) pp. 3393-3398.
[Artikel], (2011)

Endres, Ralf :
Gate-Last-Prozessintegration und elektrische Bewertung von High-k-Dielektrika und Metall-Elektroden in MOS-Bauelementen.
[Online-Edition: urn:nbn:de:tuda-tuprints-25017]
Darmstädter Dissertationen , Darmstadt, Deutschland
[Dissertation], (2011)

Endres, Ralf ; Gottlob, H. D. B. ; Schmidt, M. ; Schwendt, D. ; Osten, H. J. ; Schwalke, Udo :
Crystalline Gadolinium Oxide: A Promising High-K Candidate for Future CMOS Generations.
[Online-Edition: http://dx.doi.org/10.1149/1.3481588]
In: ECS Transactions, 33 (3) pp. 25-29.
[Artikel], (2010)

Endres, Ralf ; Schwalke, Udo :
Prozessintegration und elektrische Charakterisierung von kristallinen Gd2O3 High-k Dielektrika.
In: VDE-Fachgruppentagung 8.5.6 - fWLR / Wafer Level Reliability, 17.-18.05.2010, Erfurt, Deutschland.
[Konferenz- oder Workshop-Beitrag], (2010)

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
Gentle Gate Last Integration and Electrical Characterization of TiN/Gd2O3/Si MOS Capacitors and Field Effect Transistors.
In: 40th IEEE Semiconductor Interface Specialists Conference (SISC), 03.-05.12.2009, Arlington, VA, USA.
[Konferenz- oder Workshop-Beitrag], (2009)

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
Damascene Metal Gate Technology for Damage-free Gate-Last High-K Process Integration.
[Online-Edition: http://dx.doi.org/10.1109/ICSCS.2009.5414209]
In: 3rd International Conference on Signals, Circuits and Systems (SCS)
[Artikel], (2009)

Endres, Ralf ; Wessely, Frank ; Schwalke, Udo :
CMP-based Gate Last High-K Integration.
[Online-Edition: http://www.stw.nl/NR/rdonlyres/678497B6-D48F-4F76-94AF-EB589...]
In: Proceedings of the 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE) pp. 544-547.
[Artikel], (2008)

Endres, Ralf ; Stefanov, Yordan ; Wessely, Frank ; Zaunert, Florian ; Schwalke, Udo :
Process Damage-free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K.
[Online-Edition: http://dx.doi.org/10.1016/j.mee.2007.03.008]
In: Microelectronic Engineering, 85 (1) pp. 15-19.
[Artikel], (2008)

Endres, Ralf ; Schwalke, Udo :
Damascene Metal Gate Technology for Damage-Free High-k Process Integration.
In: Proceedings of the 7th International Semiconductor Technology Conference (ISTC) pp. 486-492.
[Artikel], (2008)

Endres, Ralf ; Schwalke, Udo :
Damascene Metal Gate Technology: A Front-End CMP Based Universal Platform for High-k Evaluation at the Device Level.
[Online-Edition: http://elib1.ulb.tu-darmstadt.de/ieee/search/srchabstract.js...]
In: Proceedings of the International Conference on Planarization Technology 2007 (ICPT) pp. 421-426.
[Artikel], (2007)

Endres, Ralf ; Schwalke, Udo :
Damascene Metal Gate Technology: A Novel Approach towards Nano CMOS Devices with Crystalline High-K Gate Dielectrics.
In: Nanotech Northern Europe (NTNE), 27.-29.03.2007, Helsinki, Finnland.
[Konferenz- oder Workshop-Beitrag], (2007)

Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo :
Electrical Characterization of Crystalline Gd2O3 Gate Dielectric MOSFETs Fabricated by Damascene Metal Gate Technology.
[Online-Edition: http://dx.doi.org/10.1016/j.microrel.2007.01.018]
In: Microelectronics Reliability, 47 (4-5) pp. 528-531.
[Artikel], (2007)

Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo :
Electrical Performance of Damascene Metal Gate MOSFETs with Crystalline Gd2O3 Gate Dielectric.
In: 37th IEEE Semiconductor Interface Specialists Conference (SISC), 07.-09.12.2006, San Diego, CA, USA.
[Konferenz- oder Workshop-Beitrag], (2006)

Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo :
Damascene Metal Gate Technology for Gentle Integration of Crystalline High-K-Gate Dielectrics.
[Online-Edition: http://dx.doi.org/10.1149/1.2356289]
In: ECS Transactions, 3 (2) pp. 297-301.
[Artikel], (2006)

Endres, Ralf ; Stefanov, Yordan ; Wessely, Frank ; Zaunert, Florian ; Schwalke, Udo :
Process Damage-Free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K Gate Dielectrics.
In: 3rd International Symposium on Advanced Gate Stack Technology (ISAGST), 27.-29.09.2006, Austin, TX, USA.
[Konferenz- oder Workshop-Beitrag], (2006)

Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo :
Epitaxial High-K Oxide Metal Gate MOSFETs: Damascene CMP Process Integration and Electrical Results.
In: Japanese Journal of Applied Physics
[Artikel], (2006)

G

Ginsel, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo :
Production of Graphene Layers by Means of CVD for Field Effect Device Fabrication.
[Online-Edition: http://www.imaginenano.com/]
In: ImageNano, 11.-14.04.2011, Bilbao, Spanien.
[Konferenz- oder Workshop-Beitrag], (2011)

Ginsel, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo :
CVD Assisted Fabrication of Graphene Layers for Field Effect Device Fabrication.
[Online-Edition: http://dx.doi.org/10.1109/DTIS.2011.5941438]
In: 6th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
[Artikel], (2011)

Gottlob, H. D. B. ; Echtermeyer, T. ; Mollenhauer, T. ; Schmidt, M. ; Efavi, J. ; Wahlbrink, T. ; Lemme, L. M. ; Kurz, H. ; Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo ; Czernohorsky, M. ; Bugiel, E. ; Fissel, A. ; Osten, H. J. :
Approaches to CMOS Integration of Epitaxial Gadolinium Oxide High-K Dielectrics.
[Online-Edition: http://dx.doi.org/10.1109/ESSDER.2006.307660]
In: Proceedings of the 36th European Solid-State Device Research Conference (ESSDERC) pp. 150-153.
[Artikel], (2006)

Gottlob, H. D. B. ; Lemme, M. C. ; Mollenhauer, T. ; Wahlbrink, T. ; Efavi, J. K. ; Kurz, H. ; Stefanov, Yordan ; Haberle, Klaus ; Komaragiri, Rama Subrahmanyam ; Ruland, Tino ; Zaunert, Florian ; Schwalke, Udo :
Introduction of Crystalline High-k Gate Dielectrics in a CMOS Process.
[Online-Edition: http://dx.doi.org/10.1016/j.jnoncrysol.2005.04.032]
In: Journal of Non-Crystalline Solids, 351 (21-23) pp. 1885-1889.
[Artikel], (2005)

H

Hurley, P. K. ; Pijolat, M. ; Cherkaoui, K. ; O'Connor, E. ; O'Connell, D. ; Negara, M. A. ; Lemme, M. C. ; Gottlob, D. B. ; Schmidt, M. ; Stegmaier, K. ; Schwalke, Udo ; Hall, S. ; Buiu, O. ; Engstrom, O. ; Newcomb, S. B. :
The Formation and Characterisation of Lanthanum Oxide Based Si/High-k/NiSi Gate Stacks by Electron-Beam Evaporation: An Examination of In-Situ Amorphous Silicon Capping and NiSi Formation.
[Online-Edition: http://dx.doi.org/10.1149/1.2779556]
In: ECS Transactions, 11 (4) pp. 145-156.
[Artikel], (2007)

K

Keyn, Martin ; Krauss, Tillmann ; Kramer, Andreas ; Schwalke, Udo :
Evaluation of Different High Κ Materials for In situ Growth of Carbon Nanotubes.
[Online-Edition: http://prime-intl.org/]
In: PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS), 02.-07.10.2016, Honolulu, Hawaii, USA.
[Konferenz- oder Workshop-Beitrag], (2016)

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications.
[Online-Edition: http://prime-intl.org/]
In: PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS), 02.-07.10.2016, Honolulu, Hawaii, USA.
[Konferenz- oder Workshop-Beitrag], (2016)

Keyn, Martin ; Krauss, Tillmann ; Kramer, Andreas ; Schwalke, Udo :
Evaluation of Different High Κ Materials for In situ Growth of Carbon Nanotubes.
In: ECS Transactions, 75 (13) pp. 65-71.
[Artikel], (2016)

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications.
In: ECS Transactions, 75 (13) pp. 57-63.
[Artikel], (2016)

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
Electrically Reconfigurable Dual Metal-gate Planar Field-effect Transistor for Dopant-free CMOS.
[Online-Edition: http://dx.doi.org/10.1109/SSD.2016.7473724]
In: International Conference on Micro & Nano Electronic Systems, 21.-24.03.2016, Leipzig, Germany.
[Konferenz- oder Workshop-Beitrag], (2016)

Keyn, Martin ; Schwalke, Udo :
Formation Process of Nickel Nano-clusters for Catalytic Growth of Carbon Nanotubes for Use in Field-Effect Transistors.
[Online-Edition: http://dx.doi.org/10.1149/06438.0001ecst]
In: ECS Transactions, 64 (38) pp. 1-11.
[Artikel], (2015)

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
Electrostatically Doped Planar Field-Effect Transistor for High Temperature Applications.
[Online-Edition: http://dx.doi.org/10.1149/2.0021507jss]
In: ECS Journal of Solid State Science and Technology, 4 (5) Q46-Q50.
[Artikel], (2015)

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
Technische Universität Darmstadt
Feldeffekttransistor-Anordnung.
[Online-Edition: https://depatisnet.dpma.de/DepatisNet/depatisnet?action=bibd...]
DE102013106729A1.
[Patent], (2014)

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
Technische Universität Darmstadt
Field Effect Transistor Arrangement.
[Online-Edition: https://patentscope.wipo.int/search/en/detail.jsf?docId=WO20...]
PCT/EP/2014/063459.
[Patent], (2014)

Keyn, Martin ; Schwalke, Udo :
Highly Parallelized Carbon Nanotubes for Field-effect Device Applications.
[Online-Edition: https://www.electrochem.org/meetings/biannual/226/]
In: 226th Meeting of the Electrochemical Society (ECS), 05.-10.10.2014, Cancún, Mexico.
[Konferenz- oder Workshop-Beitrag], (2014)

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
Novel Electrostatically Doped Planar Field-effect Transistor for High Temperature Applications.
[Online-Edition: http://dx.doi.org/10.1149/06412.0011ecst ]
In: ECS Transactions, 64 (12) pp. 11-24.
[Artikel], (2014)

Keyn, Martin ; Kramer, Andreas ; Schwalke, Udo :
Dependence of Annealing Temperature on Cluster Formation during In Situ Growth of CNTs.
[Online-Edition: http://dx.doi.org/10.1109/DTIS.2014.6850652]
In: 9th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
[Artikel], (2014)

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo :
An Electrostatically Doped Planar Device Concept.
[Online-Edition: http://dx.doi.org/10.1109/DTIS.2014.6850650]
In: 9th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
[Artikel], (2014)

Keyn, Martin ; Schwalke, Udo :
Multi-CNTFETs for Power Device Applications: Investigation of CCVD Grown CNTs by Means of Atomic Force Microscopy.
[Online-Edition: http://dx.doi.org/10.1109/DTIS.2013.6527767]
In: 8th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
[Artikel], (2013)

Keyn, Martin ; Wessely, Frank ; Schwalke, Udo :
Large-scale Parallelization of In Situ CCVD Grown Carbon Nanotubes for Power Devices.
[Online-Edition: http://www.dgm.de/tagungen/?tgnr=1178&edate=27.07.2012&lg=en...]
In: Junior Euromat 2012, 23.-27.07.2012, Lausanne, Switzerland.
[Konferenz- oder Workshop-Beitrag], (2012)

Keyn, Martin ; Wessely, Pia Juliane ; Wessely, Frank ; Rispal, Lorraine ; Palm, Johannes ; Schwalke, Udo :
Feasibility Study on In Situ CCVD Grown CNTs for Field-Effect Power Device Applications.
[Online-Edition: http://dx.doi.org/10.1109/DTIS.2012.6232952]
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS) pp. 1-3.
[Artikel], (2012)

Komaragiri, Rama Subrahmanyam :
A Simulation Study on the Performance Improvement of CMOS Devices Using Alternative Gate Electrode Structures.
[Online-Edition: urn:nbn:de:tuda-tuprints-8257]
Darmstädter Dissertationen , Darmstadt, Deutschland
[Dissertation], (2006)

Komaragiri, Rama Subrahmanyam ; Zaunert, Florian ; Schwalke, Udo :
Gate Engineering for High-K Dielectric and Ultra-thin Gate Oxide CMOS.
In: 11th Annual Workshop on Semiconductor Advances for Future Electronics (SAFE), 24.-25.11.2004, Veldhoven, Niederlande.
[Konferenz- oder Workshop-Beitrag], (2004)

Kerber, Andreas :
Methodology for Electrical Characterization of MOS Devices with Alternative Gate Dielectrics.
[Online-Edition: urn:nbn:de:tuda-tuprints-4044]
Darmstädter Dissertationen , Darmstadt, Deutschland
[Dissertation], (2004)

Kerber, Andreas ; Cartier, E. ; Degraeve, R. ; Roussel, Ph. ; Pantisano, L. ; Kauerauf, T. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo :
Charge Trapping and Dielectric Reliability of SiO2/Al2O3 Gate Stacks with TiN Electrodes.
[Online-Edition: http://dx.doi.org/10.1016/j.mee.2004.01.002]
In: Microelectronic Engineering, 72 (1-4) pp. 267-272.
[Artikel], (2004)

Kerber, Andreas ; Cartier, E. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo :
Stress Induced Charge Trapping Effects in SiO2/Al2O3 Gate Stacks with TiN Electrodes.
[Online-Edition: http://dx.doi.org/10.1063/1.1621718]
In: Journal of Applied Physics, 94 (10) pp. 6627-6630.
[Artikel], (2003)

Kerber, Andreas ; Cartier, E. ; Degraeve, R. ; Roussel, Ph. ; Pantisano, L. ; Kauerauf, T. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo :
Charge Trapping and Dielectric Reliability of SiO2/Al2O3 Gate Stacks with TiN Electrodes.
[Online-Edition: http://dx.doi.org/10.1109/TED.2003.813486]
In: IEEE Transactions on Electron Devices, 50 (5) pp. 1261-1269.
[Artikel], (2003)

Kerber, Andreas ; Cartier, E. ; Pantisano, L. ; Rosmeulen, M. ; Degraeve, R. ; Kauerauf, T. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo :
Characterization of the VT Instability in SiO2/HfO2 Gate Dielectrics.
[Online-Edition: http://dx.doi.org/10.1109/RELPHY.2003.1197718]
In: Proceedings of the IEEE International Reliability Physics Symposium (IRPS) pp. 41-45.
[Artikel], (2003)

Kerber, Andreas ; Cartier, E. ; Pantisano, L. ; Degraeve, R. ; Kauerauf, T. ; Kim, Y. ; Hou, A. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo :
Origin of the Threshold Voltage Instability in SiO2/HfO2 Dual Layer Gate Dielectrics.
[Online-Edition: http://dx.doi.org/10.1109/LED.2003.808844]
In: IEEE Dlectron Device Letters, 24 (2) pp. 87-89.
[Artikel], (2003)

Komaragiri, Rama Subrahmanyam ; Schwalke, Udo ; Stefanov, Yordan ; Ruland, Tino :
Comparison of Praseodymium Oxide Gate MOSFETs with Conventional SiO2 MOSFETs: A Simulation Study.
In: Proceedings of the International Workshop on Physics of Semiconductor Devices (IWPSD)
[Artikel], (2003)

Kerber, Andreas ; Cartier, E. ; Pantisano, L. ; Degraeve, R. ; Kim, Y. ; Hou, A. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo :
Charging Instability in n-Channel MOS-FETs with SiO2/HfO2 Gate Dielectric.
In: IEEE Semiconductor Interface Specialist Conference, 05.-07.12.2002, San Diego, CA, USA.
[Konferenz- oder Workshop-Beitrag], (2002)

L

Lemme, M. C. ; Gottlob, H. D. B. ; Echtermeyer, T. ; Kurz, H. ; Endres, Ralf ; Schwalke, Udo ; Czernohorsky, M. ; Osten, H. J. :
Complementary Metal Oxide Semiconductor Integration of Epitaxial Gd2O3.
[Online-Edition: http://dx.doi.org/10.1116/1.3054350]
In: Journal of Vacuum Science & Technology B, 27 (1) pp. 258-261.
[Artikel], (2009)

Lemme, M. C. ; Gottlob, H. D. B. ; Echtermeyer, T. ; Kurz, H. ; Endres, Ralf ; Schwalke, Udo ; Czernohorsky, M. ; Osten, H. J. :
CMOS Integration of Epitaxial Gd2O3.
In: 15th Workshop on Dielectrics in Microelectronics (WoDiM), Bad Saarow, Deutschland, 23.-25.06.2008.
[Konferenz- oder Workshop-Beitrag], (2008)

M

Marathe, Vaibhav G. ; Stefanov, Yordan ; Schwalke, Udo ; DasGupta, Nandita :
Study of Pinholes in Ultrathin SiO2 by C-AFM Technique.
[Online-Edition: http://dx.doi.org/10.1016/j.tsf.2005.09.019]
In: Thin Solid Films, 504 (1-2) pp. 11-14.
[Artikel], (2006)

N

Noll, Dennis ; Schwalke, Udo :
Enhancement of the Extent of In Situ Transfer-Free Few-Layer Graphene by Solid Carbon Source for Use in Gas Sensor Applications.
[Online-Edition: http://prime-intl.org/]
In: PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS), 02.-07.10.2016, Honolulu, Hawaii, USA.
[Konferenz- oder Workshop-Beitrag], (2016)

Noll, Dennis ; Schwalke, Udo :
Enhancement of the Extent of In Situ Transfer-Free Few-Layer Graphene by Solid Carbon Source for Use in Gas Sensor Applications.
In: ECS Transactions, 75 (13) pp. 11-16.
[Artikel], (2016)

Noll, Dennis ; Schwalke, Udo :
Investigation of Transfer-free Catalytic CVD Graphene on SiO2 by Means of Conductive Atomic Force Microscopy.
[Online-Edition: http://dx.doi.org/10.1109/DTIS.2016.7483899]
In: 11th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS) pp. 1-4.
[Artikel], (2016)

Noll, Dennis ; Schwalke, Udo :
PMMA-enhancement of The Lateral Growth of Transfer-free In Situ CCVD Grown Graphene.
[Online-Edition: http://dx.doi.org/10.1109/SSD.2016.7473696]
In: International Conference on Micro & Nano Electronic Systems, 21.-24.03.2016, Leipzig, Germany.
[Konferenz- oder Workshop-Beitrag], (2016)

Noll, Dennis ; Schwalke, Udo :
Silicon CMOS Compatible In-situ CCVD Growth of Graphene on Silicon Nitride.
[Online-Edition: http://dx.doi.org/10.1109/DTIS.2015.7127387]
In: 10th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
[Artikel], (2015)

Nordmann, Alfred ; Schwalke, Udo :
Die technische und gesellschaftliche Einbettung der Nanotechnik.
In: Thema Forschung, 2 pp. 44-50. ISSN 1434-7768
[Artikel], (2004)

R

Rispal, Lorraine ; Ginsel, Pia Juliane ; Schwalke, Udo :
In Situ Growth of Carbon for Nanoelectronics: From Nanotubes to Graphene.
[Online-Edition: http://dx.doi.org/10.1149/1.3493679]
In: ECS Transactions, 33 (9) pp. 13-19.
[Artikel], (2010)

Rispal, Lorraine :
Large Scale Fabrication of Field-Effect Devices based on In Situ Grown Carbon Nanotubes.
[Online-Edition: urn:nbn:de:tuda-tuprints-20210]
Darmstädter Dissertationen , Darmstadt, Deutschland
[Dissertation], (2009)

Rispal, Lorraine ; Schwalke, Udo :
Carbon: The Future of Nanoelectronics.
[Online-Edition: http://dx.doi.org/10.1109/ICSCS.2009.5414197]
In: 3rd International Conference on Signals, Circuits and Systems (SCS)
[Artikel], (2009)

Rispal, Lorraine ; Schwalke, Udo :
Carbon Nanotube Memory Devices: Mass-Fabrication and Electrical Characterization.
[Online-Edition: http://ecsdl.org/getpdf/servlet/GetPDFServlet?filetype=pdf&i...]
In: 216th Meeting of The Electrochemical Society (ECS), 04.-09.10.2009, Wien, Österreich.
[Konferenz- oder Workshop-Beitrag], (2009)

Rispal, Lorraine ; Schwalke, Udo :
Large-Scale In Situ Fabrication of Voltage-Programmable Dual-Layer High-k Dielectric Carbon Nanotube Memory Devices With High On/Off Ratio.
[Online-Edition: http://dx.doi.org/10.1109/LED.2008.2005850]
In: IEEE Electron Device Letters, 29 (12) pp. 1349-1352.
[Artikel], (2008)

Rispal, Lorraine ; Tschischke, T. ; Yang, Hongyu ; Schwalke, Udo :
Mass-Production of Passivated CNTFETs: Statistics and Gate-Field Dependence of Hysteresis Effect.
[Online-Edition: http://dx.doi.org/10.1149/1.2998532]
In: ECS Transactions, 13 (14) pp. 65-71.
[Artikel], (2008)

Rispal, Lorraine ; Schwalke, Udo :
Structural and Electrical Characterization of Carbon Nanotube Field-Effect Transistors Fabricated by Novel Self-aligned Growth Method.
[Online-Edition: http://dx.doi.org/10.1109/DTIS.2008.4540244]
In: 3rd International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
[Artikel], (2008)

Rispal, Lorraine ; Tschischke, T. ; Yang, Hongyu ; Schwalke, Udo :
Polymethyl Methacrylate Passivation of Carbon Nanotube Field-Effect Transistors: Novel Self-aligned Process and Influence on Device Transfer Characteristic Hysteresis.
[Online-Edition: http://dx.doi.org/10.1143/JJAP.47.3287]
In: Japanese Journal of Applied Physics, 47 (4) pp. 3287-3291.
[Artikel], (2008)

Rispal, Lorraine ; Hang, H. ; Heller, Rudolf ; Hess, Gisela ; Tzschöckel, Gerhard ; Schwalke, Udo :
Self-Aligned Fabrication Process Based on Sacrificial Catalyst for Pd-Contacted Carbon Nanotube Field-Effect Transistors.
[Online-Edition: http://dx.doi.org/10.1149/1.2783302]
In: ECS Transactions, 11 (8) pp. 53-61.
[Artikel], (2007)

Rispal, Lorraine ; Yang, Hongyu ; Heller, Rudolf ; Hess, Gisela ; Tzschöckel, Gerhard ; Schwalke, Udo :
Self-aligned Fabrication Process for Pd-Contacted and PMMA-Passivated Carbon Nanotube Field-Effect Transistors.
In: 2007 International Conference on Solid State Devices and Materials (SSDM), 18.-21.09.2007, Tsukuba, Japan.
[Konferenz- oder Workshop-Beitrag], (2007)

Rispal, Lorraine ; Schwalke, Udo :
Fabrication-Process for CNTFETs Based on Sacrificial Catalyst: Device Characterization and Conductive-AFM Measurements.
In: Nanotech Northern Europe (NTNE), 27.-29.03.2007, Helsinki, Finnland.
[Konferenz- oder Workshop-Beitrag], (2007)

Rispal, Lorraine ; Ruland, Tino ; Stefanov, Yordan ; Wessely, Frank ; Schwalke, Udo :
Conductive AFM Measurements on Carbon Nanotubes and Application for CNTFET Characterization.
[Online-Edition: http://dx.doi.org/10.1149/1.2356303]
In: ECS Transactions, 3 (2) pp. 441-448.
[Artikel], (2006)

Rispal, Lorraine ; Wessely, Frank ; Stefanov, Yordan ; Ruland, Tino ; Schwalke, Udo :
CMOS-compatible Fabrication Process of Carbon-Nanotube-Field-Effect Transistors.
In: IEEE EDS Workshop on Advanced Electron Devices, 13.-14.06.2006, Fraunhofer-Institut IMS, Duisburg, Deutschland.
[Konferenz- oder Workshop-Beitrag], (2006)

Rispal, Lorraine ; Stefanov, Yordan ; Wessely, Frank ; Schwalke, Udo :
Carbon Nanotube Transistor Fabrication Assisted by Topographical and Conductive Atomic Force Microscopy.
[Online-Edition: http://dx.doi.org/10.1143/JJAP.45.3672]
In: Japanese Journal of Applied Physics, 45 pp. 3672-3679.
[Artikel], (2006)

Rispal, Lorraine ; Stefanov, Yordan ; Heller, Rudolf ; Tzschöckel, Gerhard ; Hess, Gisela ; Haberle, Klaus ; Schwalke, Udo :
Topographic and Conductive AFM Measurements on Carbon Nanotube Field-Effect Transistors Fabricated by In-Situ Chemical Vapor Deposition.
In: International Conference on Solid State Devices and Materials (SSDM), 12.-15.09.2005, Kobe, Japan.
[Konferenz- oder Workshop-Beitrag], (2005)

Ruland, Tino ; Endres, Ralf ; Schwalke, Udo :
Application of Porous Silicon 2D Photonic Crystals as On-chip Interconnects.
In: European Congress on Advanced Materials and Processes (EUROMAT), 05.-08.09.2005, Prag, Tschechien.
[Konferenz- oder Workshop-Beitrag], (2005)

Rispal, Lorraine ; Schwalke, Udo :
Carbon Nanotube Devices Integrated in the CMOS Process Using Chemical Vapour Deposition.
In: European Congress on Advanced Materials and Processes (EUROMAT), 05.-08.09.2005, Prag, Tschechien.
[Konferenz- oder Workshop-Beitrag], (2005)

Ruland, Tino ; Endres, Ralf ; Schwalke, Udo :
Nanoscale Electrical Characterization of Crystalline Praseodymium Oxide High-k Gate Dielectric MOSFETs with Conductive Atomic Force Microscopy.
In: European Congress on Advanced Materials and Processes (EUROMAT), 05.-08.09.2005, Prag, Tschechien.
[Konferenz- oder Workshop-Beitrag], (2005)

Rispal, Lorraine ; Stefanov, Yordan ; Schwalke, Udo :
Atomic Force Microscopy (AFM) and Electrical Characterization of Carbon Nanotube (CNT) Devices Fabricated by Chemical Vapour Deposition.
In: Nanoscale III, 13.-16.08.2005, Santa Barbara, CA, USA.
[Konferenz- oder Workshop-Beitrag], (2005)

Ruland, Tino ; Stefanov, Yordan ; Rispal, Lorraine ; Schwalke, Udo :
Application of Atomic Force Microscopy in Resist Structure Evaluation.
In: VDI/VDE-Gesellschaft Mess- und Automatisierungstechnik (1860)
[Artikel], (2004)

S

Schwalke, Udo :
Computation Beyond Moore's Law: Adaptive Field-Effect Devices for Reconfigurable Logic and Hardware-Based Neural Networks.
[Online-Edition: http://dx.doi.org/10.1109/CCCS.2015.7374177]
In: International Conference on Computing Communication and Security 2015
[Artikel], (2015)

Schwalke, Udo ; Wessely, Pia Juliane :
Improved Bilayer Graphene Transistors for Applications in Nanoelectronics.
[Online-Edition: https://www.electrochem.org/meetings/biannual/226/]
In: 226th Meeting of the Electrochemical Society (ECS), 05.-10.10.2014, Cancún, Mexico.
[Konferenz- oder Workshop-Beitrag], (2014)

Sivieri, Victor de Bodt ; Wessely, Pia Juliane ; Schwalke, Udo ; Agopian, Paula G. D. ; Martino, João A. :
Graphene for Advanced Devices Applications.
[Online-Edition: http://www.chip-in-aracaju.ufs.br/sbmicro.php]
In: SBMicro 2014 - 29th Symposium on Microeletronics Technology and Devices, 01.-05.09.2014, Aracaju, Sergipe, Brazil.
[Konferenz- oder Workshop-Beitrag], (2014)

Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann :
Simulation and Experimental Verification: Dopant-free Si-Nanowire CMOS Technology on Silicon-on-Insulator Material.
[Online-Edition: http://idtsymposium.org/]
In: 8th International Design and Test Symposium (IDT), 16.-18.12.2013, Marrakesh, Morocco.
[Konferenz- oder Workshop-Beitrag], (2013)

Schwalke, Udo :
The Future of Nanoelectronics is Black: From Silicon to Hexagonal Carbon.
[Online-Edition: http://africon2013.org/]
In: Africon 2013, 09.-12.09.2013, Mauritius.
[Konferenz- oder Workshop-Beitrag], (2013)

Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann :
Dopant-free CMOS on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications.
[Online-Edition: http://dx.doi.org/10.1149/05305.0105ecst]
In: ECS Transactions, 53 (5) pp. 105-114.
[Artikel], (2013)

Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann :
CMOS without Doping on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications.
[Online-Edition: http://dx.doi.org/10.1149/2.002307jss]
In: ECS Journal of Solid State Science and Technology, 2 (6) Q88-Q93.
[Artikel], (2013)

Schwalke, Udo ; Wessely, Pia Juliane ; Wessely, Frank ; Keyn, Martin ; Rispal, Lorraine :
Nanoelectronics: From Silicon to Graphene.
[Online-Edition: http://dx.doi.org/10.1109/DTIS.2012.6232951]
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
[Artikel], (2012)

Schwalke, Udo :
Nanoelectronics: From Silicon to Carbon.
[Online-Edition: http://www.dtis-conference.net/Technical_Program.pdf]
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), 16.-18.05.2012, Gammarth, Tunisia.
[Konferenz- oder Workshop-Beitrag], (2012)

Stefanov, Yordan :
The Application of Atomic Force Microscopy in Semiconductor Technology - Towards High-K Gate Dielectric Integration.
[Online-Edition: urn:nbn:de:tuda-tuprints-29314]
Darmstädter Dissertationen , Darmstadt, Deutschland
[Dissertation], (2011)

Schwalke, Udo ; Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Keyn, Martin ; Rispal, Lorraine :
In-situ CCVD Growth of Hexagonal Carbon for CMOS-Compatible Nanoelectronics: From Nanotube Field-Effect Devices to Graphene Transistors.
[Online-Edition: http://www.tntconf.org/2011/abstracts_TNT2011/TNT2011_Schwal...]
In: 12th Trends in Nanotechnology International Conference (TNT), 21.-25.11.2011, Tenerife, Canary Islands, Spain.
[Konferenz- oder Workshop-Beitrag], (2011)

Schwalke, Udo ; Rispal, Lorraine :
Non-Volatile Memory Effect in Carbon Nanotube Field-Effect Transistors: Charge Trapping in AlxOy High-k Dielectrics Made from Sacrificial Metal Catalyst.
In: 41st IEEE Semiconductor Interface Specialists Conference (SISC), 02.-04.12.2010, San Diego, CA, USA.
[Konferenz- oder Workshop-Beitrag], (2010)

Schwalke, Udo :
Kohlenstoff: Die Zukunft der Nanoelektronik?
In: Inno.CNT-Jahreskongress, 20.01.2010, Marl, Deutschland.
[Konferenz- oder Workshop-Beitrag], (2010)

Schwalke, Udo :
Nanoscale Electrical Characterization at the Wafer Level: Defects in High-k Dielectrics.
In: VDE-Fachgruppentagung 8.5.6 - fWLR / Wafer Level Reliability, 17.-18.05.2010, Erfurt, Deutschland.
[Konferenz- oder Workshop-Beitrag], (2010)

Schwalke, Udo :
Kohlenstoff: Die Zukunft der Nanoelektronik?
In: ZVEI-Fachgruppensitzung "Halbleiter Bauelemente", 24.02.2010, Hanau, Deutschland.
[Konferenz- oder Workshop-Beitrag], (2010)

Schwalke, Udo :
Kohlenstoff-Nanoröhren als elektronische Bauteile für biomedizinische Sensor-Anwendungen.
In: 6. Nanotechnologieforum Hessen, 26.11.2009, Hanau, Deutschland.
[Konferenz- oder Workshop-Beitrag], (2009)

Schwalke, Udo :
Nano-Electronics: From Top-Down to Bottom-Up?!
In: 8th Symposium Diagnostics & Yield, Advanced Silicon Devices and Technologies for ULSI Era, 22.-24.06.2009, Warschau, Polen.
[Konferenz- oder Workshop-Beitrag], (2009)

Schwalke, Udo :
Yield, Reliability and Variability in the Nano-Era: Will Existing Approaches Survive?
In: 14th IEEE European Test Symposium, 25.-29.05.2009, Sevilla, Spanien.
[Konferenz- oder Workshop-Beitrag], (2009)

Schwalke, Udo :
Damscene Metal Gate Technology: A Solution to High-K Gate Stack Challenges?
In: DGM Arbeitskreis "Materialien für elektronische Anwendungen", Berlin, Deutschland, 20.02.2009.
[Konferenz- oder Workshop-Beitrag], (2009)

Schwalke, Udo :
Nanotechnology: The Power of Small.
[Online-Edition: http://dx.doi.org/10.1109/ICSCS.2008.4746860]
In: 2nd International Conference on Signals, Circuits & Systems (SCS)
[Artikel], (2008)

Schwalke, Udo ; Rispal, Lorraine :
Mass-Fabrication of Voltage-Programmable Non-Volatile Carbon Nanotube Memory Devices.
[Online-Edition: http://ecsdl.org/getpdf/servlet/GetPDFServlet?filetype=pdf&i...]
In: 214th Meeting of The Electrochemical Society (ECS), 12.-17.10.2008, Honolulu, HI, USA.
[Konferenz- oder Workshop-Beitrag], (2008)

Schwalke, Udo :
Field-Effect Controlled Single-Walled Carbon Nanotube Devices for Biomedical Sensor Applications.
In: 3rd International Conference on Smart Materials, Structures & Systems (CIMTEC), 08.-13.06.2008, Acireale, Italien.
[Konferenz- oder Workshop-Beitrag], (2008)

Schwalke, Udo ; Rispal, Lorraine :
Fabrication of Ultra-Sensitive Carbon Nanotube Field-Effect Sensors (CNTFES) for Biomedical Applications.
[Online-Edition: http://dx.doi.org/10.1149/1.3005401]
In: ECS Transactions, 13 (22) pp. 39-45.
[Artikel], (2008)

Schwalke, Udo :
Damascene Metal Gate Technology: A Solution to High-K Gate Stack Challenges?
In: DPG Spring Meeting, 25.-29.02.2008, Berlin, Deutschland.
[Konferenz- oder Workshop-Beitrag], (2008)

Schwalke, Udo :
Novel Field-Effect Controlled Single-Walled Carbon Nanotube Network Devices for Biomediccal Sensor Applications.
In: Conference Proceedings of Biodevices 2008
[Artikel], (2008)

Stefanov, Yordan ; Schwalke, Udo
Li, Yuzhuo (ed.) :

Shallow Trench Isolation Chemical Mechanical Planarization.
In: Microelectronic Applications of Chemical Mechanical Planarization. Wiley, Hoboken, NJ, USA ISBN 978-0-471-71919-9
[Buchkapitel], (2007)

Schwalke, Udo :
Application of Scanning Probe Microscopy Techniques for Structural and Electrical Characterization of Dielectrics, Carbon Nanotubes and Nanoelectronic Devices.
[Online-Edition: http://dx.doi.org/10.1149/1.2778673]
In: ECS Transactions, 11 (3) pp. 301-315.
[Artikel], (2007)

Schwalke, Udo :
Structural and Electrical Characterization of Dielectrics, Carbon Nanotubes and Nanoelectronic Devices by Means of Scanning Probe Microscopy.
[Online-Edition: http://dx.doi.org/10.1149/1.2773983]
In: ECS Transactions, 10 (1) pp. 129-140.
[Artikel], (2007)

Schwalke, Udo :
Nanoelectronics: From Top-Down to Bottom-Up.
In: Nanotech Northern Europe (NTNE), 27.-29.03.2007, Helsinki, Finnland.
[Konferenz- oder Workshop-Beitrag], (2007)

Schwalke, Udo :
Scaling Down Gate Dielectrics: From Ultra-Thin SiO2 to Crystalline High-K.
In: Proceedings of the 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE)
[Artikel], (2006)

Stefanov, Yordan ; Cilek, F. ; Endres, Ralf ; Schwalke, Udo :
Alternative Optimization Techniques for Shallow Trench Isolation and Replacement Gate Technology CMP.
In: The 2nd Pacific-Rim International Conference on Planarization CMP and Its Application Technology (PacRim-CMP), 17.-19.11.2005, Seoul, Korea.
[Konferenz- oder Workshop-Beitrag], (2005)

Stefanov, Yordan ; Singh, Ravneet ; DasGupta, Nandita ; Misra, Pankaj ; Schwalke, Udo :
Conductive Atomic Force Microscopy Study of Leakage Currents Through Microscopic Structural Defects in High-K Gate Dielectrics.
In: Proceedings of The Electrochemical Society Conference "Crystalline Defects and Contamination" (ECS-DECON)
[Artikel], (2005)

Stefanov, Yordan ; Komaragiri, Rama ; Schwalke, Udo :
Technological Advances for Memory Applications: Crystalline High-K Gate Dielectrics and Alternatively Doped Gates.
In: Proceedings of the 1st International Conference on Memory Technology and Design (ICMTD) p. 167.
[Artikel], (2005)

Schwalke, Udo ; Stefanov, Yordan :
Process Integration and Nanometer-Scale Electrical Characterization of Crystalline High-k Gate Dielectrics.
[Online-Edition: http://dx.doi.org/10.1016/j.microrel.2004.11.047]
In: Microelectronics Reliability, 45 (5-6) pp. 790-793.
[Artikel], (2005)

Schwalke, Udo :
Gate Dielectrics: Process Integration Issues and Electrical Properties.
In: Journal of Telecommunications and Technology, 1 p. 7.
[Artikel], (2005)

Stefanov, Yordan ; Ruland, Tino ; Schwalke, Udo :
Electrical AFM Measurements for Evaluation of Nitride Erosion in Shallow Trench Isolation Chemical Mechanical Planarization.
In: Proceedings of the MRS Fall Meeting 2004
[Artikel], (2004)

Stefanov, Yordan ; Komaragiri, Rama Subrahmanyam ; Schwalke, Udo :
Device Level and Nanoscale Electrical Characterization of Crystalline Praseodymium Oxide High-k Gate Dielectric MOSFETs.
In: Proceedings of the SEMATECH International Workshop on Electrical Characterization and Reliability for High-K Devices
[Artikel], (2004)

Stefanov, Yordan ; Komaragiri, Rama Subrahmanyam ; Ruland, Tino ; Schwalke, Udo :
Electrical AFM Measurements for STI CMP Erosion Evaluation.
In: Nanoscale International Conference: Abstracts p. 97.
[Artikel], (2004)

Stefanov, Yordan ; Hess, Gisela ; Tzschöckel, Gerhard ; Schwalke, Udo :
Global and Local Charge Trapping Effects in Crystalline Praseodymium Oxide High-K Gate Dielectric MOSFETs.
In: Proceedings of the 3rd International Conference on Semiconductor Technology (ICST)
[Artikel], (2004)

Schwalke, Udo ; Stefanov, Yordan :
Process Integration and Electrical Characterization of Crystalline High-K Gate Dielectrics.
In: 13th Workshop on Dielectrics in Microelectronics (WoDIM), 28.-30.06.2004, Kinsale, Irland. Elsevier
[Konferenz- oder Workshop-Beitrag], (2004)

Schwalke, Udo ; Stefanov, Yordan ; Komaragiri, Rama Subrahmanyam ; Ruland, Tino :
Electrical Characterisation of Crystalline Praseodymium Oxide High-K Gate Dielectric MOSFETs.
[Online-Edition: http://dx.doi.org/10.1109/ESSDERC.2003.1256859]
In: Proceedings of the 33rd European Solid State Device Research Conference (ESSDERC) pp. 243-246.
[Artikel], (2003)

Schwalke, Udo :
Towards Nano-CMOS Technology: Trends and Challenges.
In: Proceedings of the International Workshop on Physics of Semiconductor Devices (IWPSD) pp. 439-443.
[Artikel], (2003)

Schwalke, Udo ; Boye, K. ; Haberle, Klaus ; Heller, Rudolf ; Hess, Gisela ; Müller, Gudrun ; Ruland, Tino ; Tzschöckel, Gerhard ; Osten, H. J. ; Fissel, A. ; Müssig, H.-J. :
Process Integration of Crystalline Pr2O3 High-k Gate Dielectrics.
[Online-Edition: http://dx.doi.org/10.1109/ESSDERC.2002.194954]
In: Proceedings of 32nd European Solid State Device Research Conference (ESSDERC) pp. 407-410.
[Artikel], (2002)

Schwalke, Udo :
Progress in Device Isolation Technology.
[Online-Edition: http://dx.doi.org/10.1016/S0026-2714(00)00259-6]
In: Microelectronis Reliability, 41 (4) pp. 483-490.
[Artikel], (2001)

Schwalke, Udo ; Pölzl, Martin ; Sekinger, Thomas ; Kerber, Martin :
Ultra-Thick Gate Oxides: Charge Generation and Its Iimpact on Reliability.
[Online-Edition: http://dx.doi.org/10.1016/S0026-2714(01)00058-0]
In: Microelectronics Reliability, 41 (7) pp. 1007-1010.
[Artikel], (2001)

W

Wessely, Pia Juliane ; Schwalke, Udo
Aliofkhazraei, Mahmood ; Ali, Nasar ; Milne, William I. ; Ozkan, Cengiz S. ; Mitura, Stanislaw ; Gervasoni, Juana L. (eds.) :

Graphene Transistors: Silicon CMOS-Compatible Processing for Applications in Nanoelectronics.
[Online-Edition: https://www.crcpress.com/Graphene-Science-Handbook-Size-Depe...]
In: Graphene Science Handbook: Size-Dependent Properties. CRC Press ISBN 9781466591363
[Buchkapitel], (2016)

Wessely, Pia Juliane ; Schwalke, Udo :
2nd Generation Bilayer Graphene Transistors for Applications in Nanoelectronics.
[Online-Edition: http://dx.doi.org/10.1109/DTIS.2014.6850651]
In: 9th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
[Artikel], (2014)

Wessely, Pia Juliane ; Schwalke, Udo :
In-Situ CCVD Grown Bilayer Graphene Transistors for Applications in Nanoelectronics.
[Online-Edition: http://dx.doi.org/10.1016/j.apsusc.2013.09.142]
In: Applied Surface Science, 291 pp. 83-86.
[Artikel], (2014)

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo :
Reconfigurable CMOS with Undoped Silicon Nanowire Midgap Schottky-barrier FETs.
[Online-Edition: http://dx.doi.org/10.1016/j.mejo.2012.08.004]
In: Microelectronics Journal, 44 (12) pp. 1072-1076.
[Artikel], (2013)

Wessely, Pia Juliane ; Schwalke, Udo :
Graphene Transistors: Silicon CMOS Compatible Processing for Applications in Nanoelectronics.
[Online-Edition: http://www.emrs-strasbourg.com/index.php?option=com_content&...]
In: E-MRS 2013 Spring Meeting, 27.-30.05.2012, Strasbourg, France.
[Konferenz- oder Workshop-Beitrag], (2013)

Wessely, Pia Juliane ; Schwalke, Udo :
Transfer-free Bilayer Graphene FETs: Application as Memory Devices.
[Online-Edition: http://dx.doi.org/10.1149/05301.0131ecst]
In: ECS Transactions, 53 (1) pp. 133-137.
[Artikel], (2013)

Wessely, Pia Juliane :
Graphen-Transistoren: Silizium CMOS kompatible Herstellung für Anwendungen in der Nanoelektronik.
[Online-Edition: http://tuprints.ulb.tu-darmstadt.de/3435]
Darmstädter Dissertationen , Darmstadt, Deutschland
[Dissertation], (2013)

Wessely, Pia Juliane ; Schwalke, Udo :
Transfer-Free Grown Bilayer Graphene Memory Devices.
[Online-Edition: http://dx.doi.org/10.1109/DTIS.2013.6527769]
In: 8th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
[Artikel], (2013)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo :
Transfer-free grown bilayer graphene transistors for digital applications.
[Online-Edition: http://dx.doi.org/10.1016/j.sse.2012.12.008]
In: Solid-State Electronics, 81 pp. 86-90.
[Artikel], (2013)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo :
In-Situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio in Silicon CMOS Compatible Processing.
[Online-Edition: http://dx.doi.org/10.4028/www.scientific.net/AST.77.258]
In: Advances in Science and Technology, 77 pp. 258-265.
[Artikel], (2012)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo :
CCVD Assisted and Transfer-free Fabrication of Graphene Devices.
[Online-Edition: http://www.graphene-week.eu/]
In: Graphene Week 2012, 04.-08.06.2012, Delft, Netherlands.
[Konferenz- oder Workshop-Beitrag], (2012)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo :
On/Off-Current Ratios of Transfer-free Bilayer Graphene FETs as a Function of Temperature.
[Online-Edition: http://dx.doi.org/10.1109/DTIS.2012.6232950]
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
[Artikel], (2012)

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo :
Dopant-free CMOS: A New Device Concept.
[Online-Edition: http://dx.doi.org/10.1109/DTIS.2012.6232949]
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS) pp. 1-3.
[Artikel], (2012)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo :
On/Off-Current Ratios of In-Situ CCVD Grown Bilayer Graphene FETs as a Function of Temperature.
[Online-Edition: http://link.aip.org/link/?ECA/1201/755]
In: 221th Meeting of the Electrochemical Society, 06.-11.05.2012, Seattle, WA, USA.
[Konferenz- oder Workshop-Beitrag], (2012)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo :
Device Characteristics of In Situ CCVD Grown Bilayer Graphene FETs at Elevated Temperatures.
[Online-Edition: http://dx.doi.org/10.1149/1.3700449]
In: ECS Transactions, 45 (4) pp. 23-30.
[Artikel], (2012)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo ; Riedinger, Bernadette :
Transfer-free Fabrication of Graphene Transistors.
[Online-Edition: http://dx.doi.org/10.1116/1.4711128]
In: Journal of Vacuum Science & Technology B, 30 (3) 03D114-1.
[Artikel], (2012)

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo :
Virtually Dopant-free CMOS: Midgap Schottky-barrier Nanowire Field-Effect-Transistors for High Temperature Applications.
[Online-Edition: http://dx.doi.org/10.1016/j.sse.2012.04.017]
In: Solid-State Electronics, 74 pp. 91-96.
[Artikel], (2012)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo :
In-Situ CCVD Silicon CMOS Compatible Processing of Bilayer Graphene Transistors with Ultra-High On/Off-Current Ratio.
[Online-Edition: http://www.mrs.org/s12-program-ee/#tab4]
In: Spring Meeting & Exhibit 2012 of the Materials Research Society, 09.-13.04.2012, San Francisco, CA, USA.
[Konferenz- oder Workshop-Beitrag], (2012)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo :
Transfer-free Grown Bilayer Graphene Transistors with Ultra-high On/Off-Current Ratio.
[Online-Edition: http://www.phantomsnet.net/Graphene_Conf/2012/Abstracts/2012...]
In: Graphene 2012, 10.-13.04.2012, Brussels, Belgium.
[Konferenz- oder Workshop-Beitrag], (2012)

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo :
CMOS without Doping: Multi-gate Silicon-Nanowire Field-Effect-Transistors.
[Online-Edition: http://dx.doi.org/10.1016/j.sse.2011.11.011]
In: Solid-State Electronics, 70 pp. 33-38.
[Artikel], (2012)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo :
Hysteresis of In Situ CCVD Grown Graphene Transistors.
[Online-Edition: http://dx.doi.org/10.1149/2.019204esl]
In: Electrochemical and Solid-State Letters, 15 (4) K31-K34.
[Artikel], (2012)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo :
In Situ CCVD Grown Bilayer Graphene Transistor.
[Online-Edition: http://dx.doi.org/10.1149/1.3703508]
In: ECS Transactions, 41 (40) pp. 1-5.
[Artikel], (2012)

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Beckmann, Karsten ; Riedinger, Bernadette ; Schwalke, Udo :
Silicon-CMOS Compatible In-situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio.
[Online-Edition: http://dx.doi.org/10.1016/j.physe.2011.12.022]
In: Physica E: Low-dimensional Systems and Nanostructures, 44 (7-8) pp. 1132-1135.
[Artikel], (2011)

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo :
CMOS without Doping: Midgap Schottky-Barrier Nanowire Field-Effect-Transistors for High-Temperature Applications.
[Online-Edition: http://dx.doi.org/10.1109/ESSDERC.2011.6044184]
In: Proceedings of the 41th European Solid-State Device Research Conference (ESSDERC) pp. 263-266.
[Artikel], (2011)

Wessely, Frank :
CMOS ohne Dotierstoffe: Neuartige siliziumbasierte Nanodraht-Feldeffekt-Bauelemente.
[Online-Edition: urn:nbn:de:tuda-tuprints-26612]
Darmstädter Dissertationen , Darmstadt, Deutschland
[Dissertation], (2011)

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo :
Multi-Gate Voltage Selectable Silicon-Nanowire-FETs.
In: Proceedings of the Seventh Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EuroSOI) pp. 41-42.
[Artikel], (2011)

Wessely, Frank ; Krauss, Tillmann ; Endres, Ralf ; Schwalke, Udo :
Novel Application of Wafer-bonded MultiSOI: Junctionless Nanowire Transistors for CMOS Logic.
[Online-Edition: http://dx.doi.org/10.1149/1.3483505]
In: ECS Transactions, 33 (4) pp. 169-173.
[Artikel], (2010)

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo :
Dopant-Independent and Voltage-Selectable Silicon-Nanowire-CMOS Technology for Reconfigurable Logic Applications.
[Online-Edition: http://dx.doi.org/10.1109/ESSDERC.2010.5617754]
In: Proceedings of the 40th European Solid-State Device Research Conference (ESSDERC) pp. 356-358.
[Artikel], (2010)

Wessely, Frank ; Krauss, Tillmann ; Endres, Ralf ; Schwalke, Udo :
Dopant Free Multi-Gate Silicon Nanowire CMOS-Inverter on SOI Substrate.
[Online-Edition: http://dx.doi.org/10.1109/DTIS.2010.5487572]
In: 5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS) pp. 1-3.
[Artikel], (2010)

Wessely, Frank ; Endres, Ralf ; Schwalke, Udo :
Scaling of the Damascene Metal Gate Integration Process via Electron Beam Lithography.
[Online-Edition: http://dx.doi.org/10.1109/ICSCS.2009.5414217]
In: 3rd International Conference on Signals, Circuits and Systems (SCS)
[Artikel], (2009)

Wirbeleit, F. ; Pedrero, V. ; Thron, D. ; Stephan, R. ; Schwalke, Udo :
Optical Detection of SiN Stress Layer Induced Carrier Mobility Enhancement in Silicon.
In: Material Research Society (MRS), 24.-28.03.2008, San Francisco, CA, USA.
[Konferenz- oder Workshop-Beitrag], (2008)

Wessely, Frank ; Rispal, Lorraine ; Schwalke, Udo :
Mix-and-Match Lithography Based Ultrathin-body SOI Nanowires and Schottky-S/D-FETs.
[Online-Edition: http://www.stw.nl/NR/rdonlyres/ADD2FB2C-3AD4-4D1E-BA0A-1EAEA...]
In: Proceedings of Semiconductor Advances for Future Electronics (SAFE) pp. 478-481.
[Artikel], (2007)

Wessely, Frank ; Ruland, Tino ; Schwalke, Udo :
Characterization of Carbon Nanotube Field Effect Transistor (CNTFET) Fabrication Process by Atomic Force Microscopy (AFM) and Conductive-AFM.
In: European Congress on Advanced Materials and Processes (EUROMAT), 10.-13.09.2007, Nürnberg, Deutschland.
[Konferenz- oder Workshop-Beitrag], (2007)

Wessely, Frank ; Ruland, Tino ; Schwalke, Udo :
Fabrication and Characterisation of Nanoscale Schottky-S/D-MOSFETs and Gated Nanowire Devices on Ultra Thin Body SOI Material.
In: European Congress on Advanced Materials and Processes (EUROMAT), 10.-13.09.2007, Nürnberg, Deutschland.
[Konferenz- oder Workshop-Beitrag], (2007)

Z

Zaunert, Florian :
Simulation und vergleichende elektrische Bewertung von planaren und 3D-MOS-Strukturen mit high-k Gate-Dielektrika.
[Online-Edition: urn:nbn:de:tuda-tuprints-19784]
Darmstädter Dissertationen , Darmstadt, Deutschland
[Dissertation], (2009)

Zaunert, Florian ; Endres, Ralf ; Schwalke, Udo :
Device and Stress Simulation of MOSFETs with Crystalline High-k Gate-Dielectrics Manufactured with Replacement Gate Process.
[Online-Edition: http://www.stw.nl/NR/rdonlyres/298C269E-5F75-46AC-875E-ACF93...]
In: Proceedings of Semiconductor Advances for Future Electronics (SAFE) 2007 pp. 488-491.
[Artikel], (2007)

Zaunert, Florian ; Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo :
Evaluation of MOSFETs with Crystalline High-K Gate-Dielectrics: Device Simulation and Experimental Data.
[Online-Edition: http://www.nit.eu/czasopisma/JTIT/2007/2/78.pdf]
In: Journal of Telecommunications and Technology, 2 pp. 78-85.
[Artikel], (2007)

Zaunert, Florian ; Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo :
Evaluation of MOSFETs with Crystalline High-k Gate-dielectrics: Device Simulation and Experimental Data.
In: 7th Symposium Diagnostics & Yield - Advanced Silicon Devices and Technologies for ULSI Era, 25.-28.06.2006, Warschau, Polen.
[Konferenz- oder Workshop-Beitrag], (2006)

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