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Number of items at this level (without sub-levels): 183.

B

Biethan, Jens-Peter ; Kammler, Thorsten ; Naumann, Andreas ; Schwalke, Udo ; Stephan, Rolf ; Trui, Bernhard (2007):
New Results in Calculating Critical Thickness and the Degree of Relaxation for Epitaxial Grown Silicon-Germanium Layers on Silicon.
In: Book of Abstracts: E-MRS Fall Meeting 2007, pp. 214-215. [Article]

Barreiro, A. ; Selbmann, D. ; Pichler, T. ; Biedermann, K. ; Gemming, T. ; Rümmeli, M. H. ; Schwalke, Udo ; Büchner, B. (2006):
On the Effects of Solution and Reaction Parameters for the Aerosol-assisted CVD Growth of Long Carbon Nanotubes.
In: Applied Physics A, 82 (4), pp. 719-725. [Article]

E

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2011):
Damascene TiN-Gd2O3-Gate Stacks: Gentle Fabrication and Electrical Properties.
In: Microelectronic Engineering, 88 (12), pp. 3393-3398. [Article]

Endres, Ralf (2011):
Gate-Last-Prozessintegration und elektrische Bewertung von High-k-Dielektrika und Metall-Elektroden in MOS-Bauelementen.
Darmstadt, Deutschland, Darmstädter Dissertationen, Institut für Halbleitertechnik und Nanoelektronik,
[Ph.D. Thesis]

Endres, Ralf ; Gottlob, H. D. B. ; Schmidt, M. ; Schwendt, D. ; Osten, H. J. ; Schwalke, Udo (2010):
Crystalline Gadolinium Oxide: A Promising High-K Candidate for Future CMOS Generations.
In: ECS Transactions, 33 (3), pp. 25-29. [Article]

Endres, Ralf ; Schwalke, Udo (2010):
Prozessintegration und elektrische Charakterisierung von kristallinen Gd2O3 High-k Dielektrika.
VDE-Fachgruppentagung 8.5.6 - fWLR / Wafer Level Reliability, Erfurt, Deutschland, 17.-18.05.2010, [Conference or Workshop Item]

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2009):
Gentle Gate Last Integration and Electrical Characterization of TiN/Gd2O3/Si MOS Capacitors and Field Effect Transistors.
40th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 03.-05.12.2009, [Conference or Workshop Item]

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2009):
Damascene Metal Gate Technology for Damage-free Gate-Last High-K Process Integration.
In: 3rd International Conference on Signals, Circuits and Systems (SCS), [Article]

Endres, Ralf ; Wessely, Frank ; Schwalke, Udo (2008):
CMP-based Gate Last High-K Integration.
In: Proceedings of the 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), pp. 544-547. [Article]

Endres, Ralf ; Stefanov, Yordan ; Wessely, Frank ; Zaunert, Florian ; Schwalke, Udo (2008):
Process Damage-free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K.
In: Microelectronic Engineering, 85 (1), pp. 15-19. [Article]

Endres, Ralf ; Schwalke, Udo (2008):
Damascene Metal Gate Technology for Damage-Free High-k Process Integration.
In: Proceedings of the 7th International Semiconductor Technology Conference (ISTC), pp. 486-492. [Article]

Endres, Ralf ; Schwalke, Udo (2007):
Damascene Metal Gate Technology: A Front-End CMP Based Universal Platform for High-k Evaluation at the Device Level.
In: Proceedings of the International Conference on Planarization Technology 2007 (ICPT), pp. 421-426. [Article]

Endres, Ralf ; Schwalke, Udo (2007):
Damascene Metal Gate Technology: A Novel Approach towards Nano CMOS Devices with Crystalline High-K Gate Dielectrics.
Nanotech Northern Europe (NTNE), Helsinki, Finnland, 27.-29.03.2007, [Conference or Workshop Item]

Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2007):
Electrical Characterization of Crystalline Gd2O3 Gate Dielectric MOSFETs Fabricated by Damascene Metal Gate Technology.
In: Microelectronics Reliability, 47 (4-5), pp. 528-531. [Article]

Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2006):
Electrical Performance of Damascene Metal Gate MOSFETs with Crystalline Gd2O3 Gate Dielectric.
37th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, 07.-09.12.2006, [Conference or Workshop Item]

Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2006):
Damascene Metal Gate Technology for Gentle Integration of Crystalline High-K-Gate Dielectrics.
In: ECS Transactions, 3 (2), pp. 297-301. [Article]

Endres, Ralf ; Stefanov, Yordan ; Wessely, Frank ; Zaunert, Florian ; Schwalke, Udo (2006):
Process Damage-Free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K Gate Dielectrics.
3rd International Symposium on Advanced Gate Stack Technology (ISAGST), Austin, TX, USA, 27.-29.09.2006, [Conference or Workshop Item]

Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2006):
Epitaxial High-K Oxide Metal Gate MOSFETs: Damascene CMP Process Integration and Electrical Results.
In: Japanese Journal of Applied Physics, [Article]

G

Ginsel, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo (2011):
Production of Graphene Layers by Means of CVD for Field Effect Device Fabrication.
ImageNano, Bilbao, Spanien, 11.-14.04.2011, [Conference or Workshop Item]

Ginsel, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo (2011):
CVD Assisted Fabrication of Graphene Layers for Field Effect Device Fabrication.
In: 6th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Article]

Gottlob, H. D. B. ; Echtermeyer, T. ; Mollenhauer, T. ; Schmidt, M. ; Efavi, J. ; Wahlbrink, T. ; Lemme, L. M. ; Kurz, H. ; Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo ; Czernohorsky, M. ; Bugiel, E. ; Fissel, A. ; Osten, H. J. (2006):
Approaches to CMOS Integration of Epitaxial Gadolinium Oxide High-K Dielectrics.
In: Proceedings of the 36th European Solid-State Device Research Conference (ESSDERC), pp. 150-153. [Article]

Gottlob, H. D. B. ; Lemme, M. C. ; Mollenhauer, T. ; Wahlbrink, T. ; Efavi, J. K. ; Kurz, H. ; Stefanov, Yordan ; Haberle, Klaus ; Komaragiri, Rama Subrahmanyam ; Ruland, Tino ; Zaunert, Florian ; Schwalke, Udo (2005):
Introduction of Crystalline High-k Gate Dielectrics in a CMOS Process.
In: Journal of Non-Crystalline Solids, 351 (21-23), pp. 1885-1889. [Article]

H

Hurley, P. K. ; Pijolat, M. ; Cherkaoui, K. ; O'Connor, E. ; O'Connell, D. ; Negara, M. A. ; Lemme, M. C. ; Gottlob, D. B. ; Schmidt, M. ; Stegmaier, K. ; Schwalke, Udo ; Hall, S. ; Buiu, O. ; Engstrom, O. ; Newcomb, S. B. (2007):
The Formation and Characterisation of Lanthanum Oxide Based Si/High-k/NiSi Gate Stacks by Electron-Beam Evaporation: An Examination of In-Situ Amorphous Silicon Capping and NiSi Formation.
In: ECS Transactions, 11 (4), pp. 145-156. [Article]

K

Krauss, Tillmann Adrian (2019):
Planar Electrostatically Doped Reconfigurable Schottky Barrier FDSOI Field-Effect Transistor Structures.
Darmstadt, Technische Universität,
[Ph.D. Thesis]

Keyn, Martin (2018):
Untersuchung einer Herstellungstechnologie für Feldeffekt-Transistoren auf Basis von Kohlenstoffnanoröhren.
Darmstadt, Technische Universität,
[Ph.D. Thesis]

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2018):
Reconfigurable electrostatically doped 2.5-gate planar field-effect transistors for dopant-free CMOS.
In: 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS), pp. 1-4,
Taormina, Sizilien, 9-12 April 2018, DOI: 10.1109/DTIS.2018.8368567,
[Conference or Workshop Item]

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2017):
Fabrication and Simulation of Electrically Reconfigurable Dual Metal-gate Planar Field-effect Transistors for Dopant-free CMOS.
In: 12th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Book Section]

Keyn, Martin ; Krauss, Tillmann ; Kramer, Andreas ; Schwalke, Udo (2016):
Evaluation of Different High Κ Materials for In situ Growth of Carbon Nanotubes.
PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS), Honolulu, Hawaii, USA, 02.-07.10.2016, [Conference or Workshop Item]

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2016):
Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications.
PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS), Honolulu, Hawaii, USA, 02.-07.10.2016, [Conference or Workshop Item]

Keyn, Martin ; Krauss, Tillmann ; Kramer, Andreas ; Schwalke, Udo (2016):
Evaluation of Different High Κ Materials for In situ Growth of Carbon Nanotubes.
In: ECS Transactions, 75 (13), pp. 65-71. [Article]

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2016):
Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications.
In: ECS Transactions, 75 (13), pp. 57-63. [Article]

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2016):
Electrically Reconfigurable Dual Metal-gate Planar Field-effect Transistor for Dopant-free CMOS.
International Conference on Micro & Nano Electronic Systems, Leipzig, Germany, 21.-24.03.2016, [Conference or Workshop Item]

Keyn, Martin ; Schwalke, Udo (2015):
Formation Process of Nickel Nano-clusters for Catalytic Growth of Carbon Nanotubes for Use in Field-Effect Transistors.
In: ECS Transactions, 64 (38), pp. 1-11. [Article]

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2015):
Electrostatically Doped Planar Field-Effect Transistor for High Temperature Applications.
In: ECS Journal of Solid State Science and Technology, 4 (5), pp. Q46-Q50. [Article]

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2014):
Feldeffekttransistor-Anordnung.
DE 102013106729A1,
[Norm, patent, standard]

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2014):
Field Effect Transistor Arrangement.
PCT/EP 2014/063459,
[Norm, patent, standard]

Keyn, Martin ; Schwalke, Udo (2014):
Highly Parallelized Carbon Nanotubes for Field-effect Device Applications.
226th Meeting of the Electrochemical Society (ECS), Cancún, Mexico, 05.-10.10.2014, [Conference or Workshop Item]

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2014):
Novel Electrostatically Doped Planar Field-effect Transistor for High Temperature Applications.
In: ECS Transactions, 64 (12), pp. 11-24. [Article]

Keyn, Martin ; Kramer, Andreas ; Schwalke, Udo (2014):
Dependence of Annealing Temperature on Cluster Formation during In Situ Growth of CNTs.
In: 9th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Article]

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2014):
An Electrostatically Doped Planar Device Concept.
In: 9th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Article]

Keyn, Martin ; Schwalke, Udo (2013):
Multi-CNTFETs for Power Device Applications: Investigation of CCVD Grown CNTs by Means of Atomic Force Microscopy.
In: 8th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Article]

Keyn, Martin ; Wessely, Frank ; Schwalke, Udo (2012):
Large-scale Parallelization of In Situ CCVD Grown Carbon Nanotubes for Power Devices.
Junior Euromat 2012, Lausanne, Switzerland, 23.-27.07.2012, [Conference or Workshop Item]

Keyn, Martin ; Wessely, Pia Juliane ; Wessely, Frank ; Rispal, Lorraine ; Palm, Johannes ; Schwalke, Udo (2012):
Feasibility Study on In Situ CCVD Grown CNTs for Field-Effect Power Device Applications.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), pp. 1-3. [Article]

Komaragiri, Rama Subrahmanyam (2006):
A Simulation Study on the Performance Improvement of CMOS Devices Using Alternative Gate Electrode Structures.
Darmstadt, Deutschland, Darmstädter Dissertationen, Institut für Halbleitertechnik und Nanoelektronik,
[Ph.D. Thesis]

Komaragiri, Rama Subrahmanyam ; Zaunert, Florian ; Schwalke, Udo (2004):
Gate Engineering for High-K Dielectric and Ultra-thin Gate Oxide CMOS.
11th Annual Workshop on Semiconductor Advances for Future Electronics (SAFE), Veldhoven, Niederlande, 24.-25.11.2004, [Conference or Workshop Item]

Kerber, Andreas (2004):
Methodology for Electrical Characterization of MOS Devices with Alternative Gate Dielectrics.
Darmstadt, Deutschland, Darmstädter Dissertationen, Institut für Halbleitertechnik und Nanoelektronik,
[Ph.D. Thesis]

Kerber, Andreas ; Cartier, E. ; Degraeve, R. ; Roussel, Ph. ; Pantisano, L. ; Kauerauf, T. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo (2004):
Charge Trapping and Dielectric Reliability of SiO2/Al2O3 Gate Stacks with TiN Electrodes.
In: Microelectronic Engineering, 72 (1-4), pp. 267-272. [Article]

Kerber, Andreas ; Cartier, E. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo (2003):
Stress Induced Charge Trapping Effects in SiO2/Al2O3 Gate Stacks with TiN Electrodes.
In: Journal of Applied Physics, 94 (10), pp. 6627-6630. [Article]

Kerber, Andreas ; Cartier, E. ; Degraeve, R. ; Roussel, Ph. ; Pantisano, L. ; Kauerauf, T. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo (2003):
Charge Trapping and Dielectric Reliability of SiO2/Al2O3 Gate Stacks with TiN Electrodes.
In: IEEE Transactions on Electron Devices, 50 (5), pp. 1261-1269. [Article]

Kerber, Andreas ; Cartier, E. ; Pantisano, L. ; Rosmeulen, M. ; Degraeve, R. ; Kauerauf, T. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo (2003):
Characterization of the VT Instability in SiO2/HfO2 Gate Dielectrics.
In: Proceedings of the IEEE International Reliability Physics Symposium (IRPS), pp. 41-45. [Article]

Kerber, Andreas ; Cartier, E. ; Pantisano, L. ; Degraeve, R. ; Kauerauf, T. ; Kim, Y. ; Hou, A. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo (2003):
Origin of the Threshold Voltage Instability in SiO2/HfO2 Dual Layer Gate Dielectrics.
In: IEEE Dlectron Device Letters, 24 (2), pp. 87-89. [Article]

Komaragiri, Rama Subrahmanyam ; Schwalke, Udo ; Stefanov, Yordan ; Ruland, Tino (2003):
Comparison of Praseodymium Oxide Gate MOSFETs with Conventional SiO2 MOSFETs: A Simulation Study.
In: Proceedings of the International Workshop on Physics of Semiconductor Devices (IWPSD), [Article]

Kerber, Andreas ; Cartier, E. ; Pantisano, L. ; Degraeve, R. ; Kim, Y. ; Hou, A. ; Groeseneken, G. ; Maes, H. E. ; Schwalke, Udo (2002):
Charging Instability in n-Channel MOS-FETs with SiO2/HfO2 Gate Dielectric.
IEEE Semiconductor Interface Specialist Conference, San Diego, CA, USA, 05.-07.12.2002, [Conference or Workshop Item]

L

Lemme, M. C. ; Gottlob, H. D. B. ; Echtermeyer, T. ; Kurz, H. ; Endres, Ralf ; Schwalke, Udo ; Czernohorsky, M. ; Osten, H. J. (2009):
Complementary Metal Oxide Semiconductor Integration of Epitaxial Gd2O3.
In: Journal of Vacuum Science & Technology B, 27 (1), pp. 258-261. [Article]

Lemme, M. C. ; Gottlob, H. D. B. ; Echtermeyer, T. ; Kurz, H. ; Endres, Ralf ; Schwalke, Udo ; Czernohorsky, M. ; Osten, H. J. (2008):
CMOS Integration of Epitaxial Gd2O3.
15th Workshop on Dielectrics in Microelectronics (WoDiM), 23.-25.06.2008, Bad Saarow, Deutschland, [Conference or Workshop Item]

M

Marathe, Vaibhav G. ; Stefanov, Yordan ; Schwalke, Udo ; DasGupta, Nandita (2006):
Study of Pinholes in Ultrathin SiO2 by C-AFM Technique.
In: Thin Solid Films, 504 (1-2), pp. 11-14. [Article]

N

Noll, Dennis ; Schwalke, Udo (2019):
Reliability issues and length dependence of nanocrystalline graphene field-effect transistors for gas sensing.
Mykonos, Greece, 14th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS), 16.-18. April 2019, DOI: 10.1109/DTIS.2019.8734953,
[Conference or Workshop Item]

Noll, Dennis ; Schwalke, Udo (2019):
Transfer-free fabrication of nanocrystalline graphene field-effect transistor gas sensor arrays.
Tokyo, Japan, 1&2DM 2019, Tokyo, Japan, 28.-29.01.2019, [Conference or Workshop Item]

Noll, Dennis (2019):
Nanokristalline Graphen-Feldeffekttransistoren für Gassensor-Anwendungen.
Darmstadt, Technische Universität,
[Ph.D. Thesis]

Noll, Dennis ; Schwalke, Udo (2018):
Selectivity and Cross-Sensitivity of Transfer-Free Fabricated Nanocrystalline Graphene Field-Effect Sensors.
Cancun, Mexico, AIMES 2018 /234th Meeting of the Electrochemical Society (ECS), Cancun, Mexico, 30.09.-04.10.2018, DOI: 10.1149/08615.0013,
[Conference or Workshop Item]

Noll, Dennis ; Hönicke, Philip ; Kayser, Yves ; Wagner, Stefan ; Beckhoff, Burkhard ; Schwalke, Udo (2018):
Transfer-Free In Situ CCVD Grown Nanocrystalline Graphene for Sub-PPMV Ammonia Detection.
In: ECS Journal of Solid State Science and Technology, 7 (7), pp. Q3108-Q3113. ISSN 2162-8769,
DOI: 10.1149/2.0171807jss,
[Article]

Noll, Dennis ; Schwalke, Udo (2018):
Ammonia sensors based on in situ fabricated nanocrystalline graphene field-effect devices.
Taormina, 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS), Apr 10, 2018 - Apr 12, 2018, DOI: 10.1109/DTIS.2018.8368566,
[Conference or Workshop Item]

Noll, Dennis ; Schwalke, Udo (2018):
Direct fabrication of nanocrystalline graphene field effect transistors for gas detection.
Germany, Dresden, Workshop: Graphen und weitere 2D Materialien, Germany, Dresden, 02.02.2018, [Conference or Workshop Item]

Noll, Dennis ; Schwalke, Udo (2018):
Yield and Reliability of Nanocrystalline Graphene Field-Effect Gas Sensors.
pp. 41-49, AiMES 2018 -The Americas International Meeting on Electrochemistry and Solid State Science, Cancun, Mexico, 30.09.-04.10.2018, ISSN 1938-5862, e-ISSN 1938-6737,
DOI: 10.1149/08609.0041ecst,
[Conference or Workshop Item]

Noll, Dennis ; Schwalke, Udo (2018):
Selectivity and Cross-Sensitivity of Transfer-Free Fabricated Nanocrystalline Graphene Field-Effect Sensors.
In: ECS Transactions, 86 (15), pp. 13-21. ISSN 1938-6737,
DOI: 10.1149/08615.0013,
[Article]

Noll, Dennis ; Schwalke, Udo (2018):
Selectivity and Cross-Sensitivity of Transfer-Free Fabricated Nanocrystalline Graphene Field-Effect Gas Sensors.
In: ECS Transactions, 86 (15), pp. 13-21. ISSN 1938-6737,
[Article]

Noll, Dennis ; Hönicke, Philip ; Beckhoff, Burkhard ; Schwalke, Udo (2018):
Ammonia Sensing Using Transfer-Free in situ CCVD Grown Nanocrystalline Graphene Field Effect Transistors.
USA, Seattle, Washington, 233rd Meeting of the Electrochemical Society (ECS), USA, Seattle, Washington, 13.-17.05.2018, [Conference or Workshop Item]

Noll, Dennis ; Schwalke, Udo (2017):
Feasibility Study of in-situ Grown Nanocrystalline Graphene for Humidity Sensing.
Palma de Mallorca, Spain, 12th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), Palma de Mallorca, Spain, 04.-06.04.2017, [Conference or Workshop Item]

Noll, Dennis ; Schwalke, Udo (2017):
Evaluation of Metal Catalysts for Growth of Nanocrystalline Graphene for Gas Sensing.
E-MRS 2017 Spring Meeting, Strasbourg, France, 22.-26.05.2017, [Conference or Workshop Item]

Noll, Dennis ; Schwalke, Udo (2016):
Enhancement of the Extent of In Situ Transfer-Free Few-Layer Graphene by Solid Carbon Source for Use in Gas Sensor Applications.
PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS), Honolulu, Hawaii, USA, 02.-07.10.2016, [Conference or Workshop Item]

Noll, Dennis ; Schwalke, Udo (2016):
Enhancement of the Extent of In Situ Transfer-Free Few-Layer Graphene by Solid Carbon Source for Use in Gas Sensor Applications.
In: ECS Transactions, 75 (13), pp. 11-16. [Article]

Noll, Dennis ; Schwalke, Udo (2016):
PMMA-enhancement of The Lateral Growth of Transfer-free In Situ CCVD Grown Graphene.
Leipzig, Germany, 13th International Multi-Conference on Systems, Signals & Devices (SSD), 21.-24.03.2016, [Conference or Workshop Item]

Noll, Dennis ; Schwalke, Udo (2016):
Investigation of Transfer-free Catalytic CVD Graphene on SiO2 by Means of Conductive Atomic Force Microscopy.
Istanbul, Turkey, 11th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), Istanbul, Turkey, 12.-14.04.2016, DOI: 10.1109/DTIS.2016.7483899,
[Conference or Workshop Item]

Noll, Dennis ; Schwalke, Udo (2015):
Silicon CMOS Compatible In-situ CCVD Growth of Graphene on Silicon Nitride.
Naples, Italy, 10th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), Naples, Italy, 21.-23.04.2015, DOI: 10.1109/DTIS.2015.7127387,
[Conference or Workshop Item]

Nordmann, Alfred ; Schwalke, Udo (2004):
Die technische und gesellschaftliche Einbettung der Nanotechnik.
In: Thema Forschung, 2, pp. 44-50. ISSN 1434-7768,
[Article]

R

Rispal, Lorraine ; Ginsel, Pia Juliane ; Schwalke, Udo (2010):
In Situ Growth of Carbon for Nanoelectronics: From Nanotubes to Graphene.
In: ECS Transactions, 33 (9), pp. 13-19. [Article]

Rispal, Lorraine (2009):
Large Scale Fabrication of Field-Effect Devices based on In Situ Grown Carbon Nanotubes.
Darmstadt, Deutschland, Darmstädter Dissertationen, Institut für Halbleitertechnik und Nanoelektronik,
[Ph.D. Thesis]

Rispal, Lorraine ; Schwalke, Udo (2009):
Carbon: The Future of Nanoelectronics.
In: 3rd International Conference on Signals, Circuits and Systems (SCS), [Article]

Rispal, Lorraine ; Schwalke, Udo (2009):
Carbon Nanotube Memory Devices: Mass-Fabrication and Electrical Characterization.
216th Meeting of The Electrochemical Society (ECS), Wien, Österreich, 04.-09.10.2009, [Conference or Workshop Item]

Rispal, Lorraine ; Schwalke, Udo (2008):
Large-Scale In Situ Fabrication of Voltage-Programmable Dual-Layer High-k Dielectric Carbon Nanotube Memory Devices With High On/Off Ratio.
In: IEEE Electron Device Letters, 29 (12), pp. 1349-1352. [Article]

Rispal, Lorraine ; Tschischke, T. ; Yang, Hongyu ; Schwalke, Udo (2008):
Mass-Production of Passivated CNTFETs: Statistics and Gate-Field Dependence of Hysteresis Effect.
In: ECS Transactions, 13 (14), pp. 65-71. [Article]

Rispal, Lorraine ; Schwalke, Udo (2008):
Structural and Electrical Characterization of Carbon Nanotube Field-Effect Transistors Fabricated by Novel Self-aligned Growth Method.
In: 3rd International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Article]

Rispal, Lorraine ; Tschischke, T. ; Yang, Hongyu ; Schwalke, Udo (2008):
Polymethyl Methacrylate Passivation of Carbon Nanotube Field-Effect Transistors: Novel Self-aligned Process and Influence on Device Transfer Characteristic Hysteresis.
In: Japanese Journal of Applied Physics, 47 (4), pp. 3287-3291. [Article]

Rispal, Lorraine ; Hang, H. ; Heller, Rudolf ; Hess, Gisela ; Tzschöckel, Gerhard ; Schwalke, Udo (2007):
Self-Aligned Fabrication Process Based on Sacrificial Catalyst for Pd-Contacted Carbon Nanotube Field-Effect Transistors.
In: ECS Transactions, 11 (8), pp. 53-61. [Article]

Rispal, Lorraine ; Yang, Hongyu ; Heller, Rudolf ; Hess, Gisela ; Tzschöckel, Gerhard ; Schwalke, Udo (2007):
Self-aligned Fabrication Process for Pd-Contacted and PMMA-Passivated Carbon Nanotube Field-Effect Transistors.
2007 International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan, 18.-21.09.2007, [Conference or Workshop Item]

Rispal, Lorraine ; Schwalke, Udo (2007):
Fabrication-Process for CNTFETs Based on Sacrificial Catalyst: Device Characterization and Conductive-AFM Measurements.
Nanotech Northern Europe (NTNE), Helsinki, Finnland, 27.-29.03.2007, [Conference or Workshop Item]

Rispal, Lorraine ; Ruland, Tino ; Stefanov, Yordan ; Wessely, Frank ; Schwalke, Udo (2006):
Conductive AFM Measurements on Carbon Nanotubes and Application for CNTFET Characterization.
In: ECS Transactions, 3 (2), pp. 441-448. [Article]

Rispal, Lorraine ; Wessely, Frank ; Stefanov, Yordan ; Ruland, Tino ; Schwalke, Udo (2006):
CMOS-compatible Fabrication Process of Carbon-Nanotube-Field-Effect Transistors.
IEEE EDS Workshop on Advanced Electron Devices, Fraunhofer-Institut IMS, Duisburg, Deutschland, 13.-14.06.2006, [Conference or Workshop Item]

Rispal, Lorraine ; Stefanov, Yordan ; Wessely, Frank ; Schwalke, Udo (2006):
Carbon Nanotube Transistor Fabrication Assisted by Topographical and Conductive Atomic Force Microscopy.
In: Japanese Journal of Applied Physics, 45, pp. 3672-3679. [Article]

Rispal, Lorraine ; Stefanov, Yordan ; Heller, Rudolf ; Tzschöckel, Gerhard ; Hess, Gisela ; Haberle, Klaus ; Schwalke, Udo (2005):
Topographic and Conductive AFM Measurements on Carbon Nanotube Field-Effect Transistors Fabricated by In-Situ Chemical Vapor Deposition.
International Conference on Solid State Devices and Materials (SSDM), Kobe, Japan, 12.-15.09.2005, [Conference or Workshop Item]

Ruland, Tino ; Endres, Ralf ; Schwalke, Udo (2005):
Application of Porous Silicon 2D Photonic Crystals as On-chip Interconnects.
European Congress on Advanced Materials and Processes (EUROMAT), Prag, Tschechien, 05.-08.09.2005, [Conference or Workshop Item]

Rispal, Lorraine ; Schwalke, Udo (2005):
Carbon Nanotube Devices Integrated in the CMOS Process Using Chemical Vapour Deposition.
European Congress on Advanced Materials and Processes (EUROMAT), Prag, Tschechien, 05.-08.09.2005, [Conference or Workshop Item]

Ruland, Tino ; Endres, Ralf ; Schwalke, Udo (2005):
Nanoscale Electrical Characterization of Crystalline Praseodymium Oxide High-k Gate Dielectric MOSFETs with Conductive Atomic Force Microscopy.
European Congress on Advanced Materials and Processes (EUROMAT), Prag, Tschechien, 05.-08.09.2005, [Conference or Workshop Item]

Rispal, Lorraine ; Stefanov, Yordan ; Schwalke, Udo (2005):
Atomic Force Microscopy (AFM) and Electrical Characterization of Carbon Nanotube (CNT) Devices Fabricated by Chemical Vapour Deposition.
Nanoscale III, Santa Barbara, CA, USA, 13.-16.08.2005, [Conference or Workshop Item]

Ruland, Tino ; Stefanov, Yordan ; Rispal, Lorraine ; Schwalke, Udo (2004):
Application of Atomic Force Microscopy in Resist Structure Evaluation.
In: VDI/VDE-Gesellschaft Mess- und Automatisierungstechnik, (1860), [Article]

S

Schwalke, Udo ; Noll, Dennis (2019):
Silicon-CMOS Compatible Transfer-Free Fabrication of Nanocrystalline Graphene Field-Effect Devices for Smart Gas-Sensor Applications.
Singapore, Singapore, Electron Devices Technology and Manufacturing Conference (EDTM), Singapore, Singapore, 12.-15.03.2019, DOI: 10.1109/EDTM.2019.8731320,
[Conference or Workshop Item]

Schwalke, Udo ; Noll, Dennis (2018):
Transfer-free mass-fabrication of graphene field-effect gas sensors.
Perth, Australia, AN-EM 2018 13th International Conference on Advanced Nano and Energy Materials, Perth, Australia, 12.-14.12.2018, [Conference or Workshop Item]

Schwalke, Udo ; Krauss, Tillmann ; Wessely, Frank
Prof. Schwalke, Udo (ed.) (2017):
Field effect transistor arrangement.
[Norm, patent, standard]

Schwarz, Mike ; Calvet, Laurie E. ; Snyder, John P. ; Krauss, Tillmann ; Schwalke, Udo ; Kloes, Alexander (2017):
On the Physical Behavior of Cryogenic IV and III-V Schottky Barrier MOSFET Devices.
In: IEEE Transactions on Electron Devices, 99, pp. 1-8. [Article]

Schwalke, Udo (2015):
Computation Beyond Moore's Law: Adaptive Field-Effect Devices for Reconfigurable Logic and Hardware-Based Neural Networks.
International Conference on Computing Communication and Security 2015, Pointe aux Piments, Mauritius, 04.-05.12.2015, DOI: 10.1109/CCCS.2015.7374177,
[Conference or Workshop Item]

Schwalke, Udo ; Wessely, Pia Juliane (2014):
Improved Bilayer Graphene Transistors for Applications in Nanoelectronics.
226th Meeting of the Electrochemical Society (ECS), Cancún, Mexico, 05.-10.10.2014, [Conference or Workshop Item]

Sivieri, Victor de Bodt ; Wessely, Pia Juliane ; Schwalke, Udo ; Agopian, Paula G. D. ; Martino, João A. (2014):
Graphene for Advanced Devices Applications.
SBMicro 2014 - 29th Symposium on Microeletronics Technology and Devices, Aracaju, Sergipe, Brazil, 01.-05.09.2014, [Conference or Workshop Item]

Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann (2013):
Simulation and Experimental Verification: Dopant-free Si-Nanowire CMOS Technology on Silicon-on-Insulator Material.
8th International Design and Test Symposium (IDT), Marrakesh, Morocco, 16.-18.12.2013, [Conference or Workshop Item]

Schwalke, Udo (2013):
The Future of Nanoelectronics is Black: From Silicon to Hexagonal Carbon.
Africon 2013, Mauritius, 09.-12.09.2013, [Conference or Workshop Item]

Schwalke, Udo ; Krauss, Tillmann ; Wessely, Frank
Prof. Schwalke, Udo (ed.) (2013):
Feldeffekttransistor-Anordnung.
[Norm, patent, standard]

Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann (2013):
Dopant-free CMOS on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications.
In: ECS Transactions, 53 (5), pp. 105-114. [Article]

Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann (2013):
CMOS without Doping on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications.
In: ECS Journal of Solid State Science and Technology, 2 (6), pp. Q88-Q93. [Article]

Schwalke, Udo ; Wessely, Pia Juliane ; Wessely, Frank ; Keyn, Martin ; Rispal, Lorraine (2012):
Nanoelectronics: From Silicon to Graphene.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Article]

Schwalke, Udo (2012):
Nanoelectronics: From Silicon to Carbon.
7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), Gammarth, Tunisia, 16.-18.05.2012, [Conference or Workshop Item]

Stefanov, Yordan (2012):
The Application of Atomic Force Microscopy in Semiconductor Technology - Towards High-K Gate Dielectric Integration.
Darmstadt, Deutschland, Darmstädter Dissertationen, TU Darmstadt,
[Ph.D. Thesis]

Schwalke, Udo ; Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Keyn, Martin ; Rispal, Lorraine (2011):
In-situ CCVD Growth of Hexagonal Carbon for CMOS-Compatible Nanoelectronics: From Nanotube Field-Effect Devices to Graphene Transistors.
12th Trends in Nanotechnology International Conference (TNT), Tenerife, Canary Islands, Spain, 21.-25.11.2011, [Conference or Workshop Item]

Schwalke, Udo ; Rispal, Lorraine (2010):
Non-Volatile Memory Effect in Carbon Nanotube Field-Effect Transistors: Charge Trapping in AlxOy High-k Dielectrics Made from Sacrificial Metal Catalyst.
41st IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, 02.-04.12.2010, [Conference or Workshop Item]

Schwalke, Udo (2010):
Kohlenstoff: Die Zukunft der Nanoelektronik?
Inno.CNT-Jahreskongress, Marl, Deutschland, 20.01.2010, [Conference or Workshop Item]

Schwalke, Udo (2010):
Nanoscale Electrical Characterization at the Wafer Level: Defects in High-k Dielectrics.
VDE-Fachgruppentagung 8.5.6 - fWLR / Wafer Level Reliability, Erfurt, Deutschland, 17.-18.05.2010, [Conference or Workshop Item]

Schwalke, Udo (2010):
Kohlenstoff: Die Zukunft der Nanoelektronik?
ZVEI-Fachgruppensitzung "Halbleiter Bauelemente", Hanau, Deutschland, 24.02.2010, [Conference or Workshop Item]

Schwalke, Udo (2009):
Kohlenstoff-Nanoröhren als elektronische Bauteile für biomedizinische Sensor-Anwendungen.
6. Nanotechnologieforum Hessen, Hanau, Deutschland, 26.11.2009, [Conference or Workshop Item]

Schwalke, Udo (2009):
Nano-Electronics: From Top-Down to Bottom-Up?!
8th Symposium Diagnostics & Yield, Advanced Silicon Devices and Technologies for ULSI Era, Warschau, Polen, 22.-24.06.2009, [Conference or Workshop Item]

Schwalke, Udo (2009):
Yield, Reliability and Variability in the Nano-Era: Will Existing Approaches Survive?
14th IEEE European Test Symposium, Sevilla, Spanien, 25.-29.05.2009, [Conference or Workshop Item]

Schwalke, Udo (2009):
Damscene Metal Gate Technology: A Solution to High-K Gate Stack Challenges?
DGM Arbeitskreis "Materialien für elektronische Anwendungen", 20.02.2009, Berlin, Deutschland, [Conference or Workshop Item]

Schwalke, Udo (2008):
Nanotechnology: The Power of Small.
In: 2nd International Conference on Signals, Circuits & Systems (SCS), [Article]

Schwalke, Udo ; Rispal, Lorraine (2008):
Mass-Fabrication of Voltage-Programmable Non-Volatile Carbon Nanotube Memory Devices.
214th Meeting of The Electrochemical Society (ECS), Honolulu, HI, USA, 12.-17.10.2008, [Conference or Workshop Item]

Schwalke, Udo (2008):
Field-Effect Controlled Single-Walled Carbon Nanotube Devices for Biomedical Sensor Applications.
3rd International Conference on Smart Materials, Structures & Systems (CIMTEC), Acireale, Italien, 08.-13.06.2008, [Conference or Workshop Item]

Schwalke, Udo ; Rispal, Lorraine (2008):
Fabrication of Ultra-Sensitive Carbon Nanotube Field-Effect Sensors (CNTFES) for Biomedical Applications.
In: ECS Transactions, 13 (22), pp. 39-45. [Article]

Schwalke, Udo (2008):
Damascene Metal Gate Technology: A Solution to High-K Gate Stack Challenges?
DPG Spring Meeting, Berlin, Deutschland, 25.-29.02.2008, [Conference or Workshop Item]

Schwalke, Udo (2008):
Novel Field-Effect Controlled Single-Walled Carbon Nanotube Network Devices for Biomediccal Sensor Applications.
In: Conference Proceedings of Biodevices 2008, [Article]

Stefanov, Yordan ; Schwalke, Udo
Li, Yuzhuo (ed.) (2007):
Shallow Trench Isolation Chemical Mechanical Planarization.
In: Microelectronic Applications of Chemical Mechanical Planarization, Hoboken, NJ, USA, Wiley, ISBN 978-0-471-71919-9,
[Book Section]

Schwalke, Udo (2007):
Application of Scanning Probe Microscopy Techniques for Structural and Electrical Characterization of Dielectrics, Carbon Nanotubes and Nanoelectronic Devices.
In: ECS Transactions, 11 (3), pp. 301-315. [Article]

Schwalke, Udo (2007):
Structural and Electrical Characterization of Dielectrics, Carbon Nanotubes and Nanoelectronic Devices by Means of Scanning Probe Microscopy.
In: ECS Transactions, 10 (1), pp. 129-140. [Article]

Schwalke, Udo (2007):
Nanoelectronics: From Top-Down to Bottom-Up.
Nanotech Northern Europe (NTNE), Helsinki, Finnland, 27.-29.03.2007, [Conference or Workshop Item]

Schwalke, Udo (2006):
Scaling Down Gate Dielectrics: From Ultra-Thin SiO2 to Crystalline High-K.
In: Proceedings of the 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), [Article]

Stefanov, Yordan ; Cilek, F. ; Endres, Ralf ; Schwalke, Udo (2005):
Alternative Optimization Techniques for Shallow Trench Isolation and Replacement Gate Technology CMP.
The 2nd Pacific-Rim International Conference on Planarization CMP and Its Application Technology (PacRim-CMP), Seoul, Korea, 17.-19.11.2005, [Conference or Workshop Item]

Stefanov, Yordan ; Singh, Ravneet ; DasGupta, Nandita ; Misra, Pankaj ; Schwalke, Udo (2005):
Conductive Atomic Force Microscopy Study of Leakage Currents Through Microscopic Structural Defects in High-K Gate Dielectrics.
In: Proceedings of The Electrochemical Society Conference "Crystalline Defects and Contamination" (ECS-DECON), [Article]

Stefanov, Yordan ; Komaragiri, Rama ; Schwalke, Udo (2005):
Technological Advances for Memory Applications: Crystalline High-K Gate Dielectrics and Alternatively Doped Gates.
In: Proceedings of the 1st International Conference on Memory Technology and Design (ICMTD), p. 167. [Article]

Schwalke, Udo ; Stefanov, Yordan (2005):
Process Integration and Nanometer-Scale Electrical Characterization of Crystalline High-k Gate Dielectrics.
In: Microelectronics Reliability, 45 (5-6), pp. 790-793. [Article]

Schwalke, Udo (2005):
Gate Dielectrics: Process Integration Issues and Electrical Properties.
In: Journal of Telecommunications and Technology, 1, p. 7. [Article]

Stefanov, Yordan ; Ruland, Tino ; Schwalke, Udo (2004):
Electrical AFM Measurements for Evaluation of Nitride Erosion in Shallow Trench Isolation Chemical Mechanical Planarization.
In: Proceedings of the MRS Fall Meeting 2004, [Article]

Stefanov, Yordan ; Komaragiri, Rama Subrahmanyam ; Schwalke, Udo (2004):
Device Level and Nanoscale Electrical Characterization of Crystalline Praseodymium Oxide High-k Gate Dielectric MOSFETs.
In: Proceedings of the SEMATECH International Workshop on Electrical Characterization and Reliability for High-K Devices, [Article]

Stefanov, Yordan ; Komaragiri, Rama Subrahmanyam ; Ruland, Tino ; Schwalke, Udo (2004):
Electrical AFM Measurements for STI CMP Erosion Evaluation.
In: Nanoscale International Conference: Abstracts, p. 97. [Article]

Stefanov, Yordan ; Hess, Gisela ; Tzschöckel, Gerhard ; Schwalke, Udo (2004):
Global and Local Charge Trapping Effects in Crystalline Praseodymium Oxide High-K Gate Dielectric MOSFETs.
In: Proceedings of the 3rd International Conference on Semiconductor Technology (ICST), [Article]

Schwalke, Udo ; Stefanov, Yordan (2004):
Process Integration and Electrical Characterization of Crystalline High-K Gate Dielectrics.
Elsevier, 13th Workshop on Dielectrics in Microelectronics (WoDIM), Kinsale, Irland, 28.-30.06.2004, [Conference or Workshop Item]

Schwalke, Udo ; Stefanov, Yordan ; Komaragiri, Rama Subrahmanyam ; Ruland, Tino (2003):
Electrical Characterisation of Crystalline Praseodymium Oxide High-K Gate Dielectric MOSFETs.
In: Proceedings of the 33rd European Solid State Device Research Conference (ESSDERC), pp. 243-246. [Article]

Schwalke, Udo (2003):
Towards Nano-CMOS Technology: Trends and Challenges.
In: Proceedings of the International Workshop on Physics of Semiconductor Devices (IWPSD), pp. 439-443. [Article]

Schwalke, Udo ; Boye, K. ; Haberle, Klaus ; Heller, Rudolf ; Hess, Gisela ; Müller, Gudrun ; Ruland, Tino ; Tzschöckel, Gerhard ; Osten, H. J. ; Fissel, A. ; Müssig, H.-J. (2002):
Process Integration of Crystalline Pr2O3 High-k Gate Dielectrics.
In: Proceedings of 32nd European Solid State Device Research Conference (ESSDERC), pp. 407-410. [Article]

Schwalke, Udo (2001):
Progress in Device Isolation Technology.
In: Microelectronis Reliability, 41 (4), pp. 483-490. [Article]

Schwalke, Udo ; Pölzl, Martin ; Sekinger, Thomas ; Kerber, Martin (2001):
Ultra-Thick Gate Oxides: Charge Generation and Its Iimpact on Reliability.
In: Microelectronics Reliability, 41 (7), pp. 1007-1010. [Article]

W

Wessely, Pia Juliane ; Schwalke, Udo
Aliofkhazraei, Mahmood ; Ali, Nasar ; Milne, William I. ; Ozkan, Cengiz S. ; Mitura, Stanislaw ; Gervasoni, Juana L. (eds.) (2016):
Graphene Transistors: Silicon CMOS-Compatible Processing for Applications in Nanoelectronics.
Volume 5, In: Graphene Science Handbook: Size-Dependent Properties, CRC Press, ISBN 9781466591363,
[Book Section]

Wessely, Pia Juliane ; Schwalke, Udo (2014):
2nd Generation Bilayer Graphene Transistors for Applications in Nanoelectronics.
In: 9th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Article]

Wessely, Pia Juliane ; Schwalke, Udo (2014):
In-Situ CCVD Grown Bilayer Graphene Transistors for Applications in Nanoelectronics.
In: Applied Surface Science, 291, pp. 83-86. [Article]

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2013):
Reconfigurable CMOS with Undoped Silicon Nanowire Midgap Schottky-barrier FETs.
In: Microelectronics Journal, 44 (12), pp. 1072-1076. [Article]

Wessely, Pia Juliane ; Schwalke, Udo (2013):
Graphene Transistors: Silicon CMOS Compatible Processing for Applications in Nanoelectronics.
E-MRS 2013 Spring Meeting, Strasbourg, France, 27.-30.05.2012, [Conference or Workshop Item]

Wessely, Pia Juliane ; Schwalke, Udo (2013):
Transfer-free Bilayer Graphene FETs: Application as Memory Devices.
In: ECS Transactions, 53 (1), pp. 133-137. [Article]

Wessely, Pia Juliane (2013):
Graphen-Transistoren: Silizium CMOS kompatible Herstellung für Anwendungen in der Nanoelektronik.
Darmstadt, Deutschland, Darmstädter Dissertationen, TU Darmstadt,
[Ph.D. Thesis]

Wessely, Pia Juliane ; Schwalke, Udo (2013):
Transfer-Free Grown Bilayer Graphene Memory Devices.
In: 8th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Article]

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2013):
Transfer-free grown bilayer graphene transistors for digital applications.
In: Solid-State Electronics, 81, pp. 86-90. [Article]

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012):
In-Situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio in Silicon CMOS Compatible Processing.
In: Advances in Science and Technology, 77, pp. 258-265. [Article]

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012):
CCVD Assisted and Transfer-free Fabrication of Graphene Devices.
Graphene Week 2012, Delft, Netherlands, 04.-08.06.2012, [Conference or Workshop Item]

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012):
On/Off-Current Ratios of Transfer-free Bilayer Graphene FETs as a Function of Temperature.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Article]

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2012):
Dopant-free CMOS: A New Device Concept.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), pp. 1-3. [Article]

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012):
On/Off-Current Ratios of In-Situ CCVD Grown Bilayer Graphene FETs as a Function of Temperature.
221th Meeting of the Electrochemical Society, Seattle, WA, USA, 06.-11.05.2012, [Conference or Workshop Item]

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012):
Device Characteristics of In Situ CCVD Grown Bilayer Graphene FETs at Elevated Temperatures.
In: ECS Transactions, 45 (4), pp. 23-30. [Article]

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo ; Riedinger, Bernadette (2012):
Transfer-free Fabrication of Graphene Transistors.
In: Journal of Vacuum Science & Technology B, 30 (3), pp. 03D114-1. [Article]

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2012):
Virtually Dopant-free CMOS: Midgap Schottky-barrier Nanowire Field-Effect-Transistors for High Temperature Applications.
In: Solid-State Electronics, 74, pp. 91-96. [Article]

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo (2012):
In-Situ CCVD Silicon CMOS Compatible Processing of Bilayer Graphene Transistors with Ultra-High On/Off-Current Ratio.
Spring Meeting & Exhibit 2012 of the Materials Research Society, San Francisco, CA, USA, 09.-13.04.2012, [Conference or Workshop Item]

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012):
Transfer-free Grown Bilayer Graphene Transistors with Ultra-high On/Off-Current Ratio.
Graphene 2012, Brussels, Belgium, 10.-13.04.2012, [Conference or Workshop Item]

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2012):
CMOS without Doping: Multi-gate Silicon-Nanowire Field-Effect-Transistors.
In: Solid-State Electronics, 70, pp. 33-38. [Article]

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012):
Hysteresis of In Situ CCVD Grown Graphene Transistors.
In: Electrochemical and Solid-State Letters, 15 (4), pp. K31-K34. [Article]

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo (2012):
In Situ CCVD Grown Bilayer Graphene Transistor.
In: ECS Transactions, 41 (40), pp. 1-5. [Article]

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Beckmann, Karsten ; Riedinger, Bernadette ; Schwalke, Udo (2011):
Silicon-CMOS Compatible In-situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio.
In: Physica E: Low-dimensional Systems and Nanostructures, 44 (7-8), pp. 1132-1135. [Article]

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2011):
CMOS without Doping: Midgap Schottky-Barrier Nanowire Field-Effect-Transistors for High-Temperature Applications.
In: Proceedings of the 41th European Solid-State Device Research Conference (ESSDERC), pp. 263-266. [Article]

Wessely, Frank (2011):
CMOS ohne Dotierstoffe: Neuartige siliziumbasierte Nanodraht-Feldeffekt-Bauelemente.
Darmstadt, Deutschland, Darmstädter Dissertationen, TU Darmstadt,
[Ph.D. Thesis]

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2011):
Multi-Gate Voltage Selectable Silicon-Nanowire-FETs.
In: Proceedings of the Seventh Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EuroSOI), pp. 41-42. [Article]

Wessely, Frank ; Krauss, Tillmann ; Endres, Ralf ; Schwalke, Udo (2010):
Novel Application of Wafer-bonded MultiSOI: Junctionless Nanowire Transistors for CMOS Logic.
In: ECS Transactions, 33 (4), pp. 169-173. [Article]

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2010):
Dopant-Independent and Voltage-Selectable Silicon-Nanowire-CMOS Technology for Reconfigurable Logic Applications.
In: Proceedings of the 40th European Solid-State Device Research Conference (ESSDERC), pp. 356-358. [Article]

Wessely, Frank ; Krauss, Tillmann ; Endres, Ralf ; Schwalke, Udo (2010):
Dopant Free Multi-Gate Silicon Nanowire CMOS-Inverter on SOI Substrate.
In: 5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS), pp. 1-3. [Article]

Wessely, Frank ; Endres, Ralf ; Schwalke, Udo (2009):
Scaling of the Damascene Metal Gate Integration Process via Electron Beam Lithography.
In: 3rd International Conference on Signals, Circuits and Systems (SCS), [Article]

Wirbeleit, F. ; Pedrero, V. ; Thron, D. ; Stephan, R. ; Schwalke, Udo (2008):
Optical Detection of SiN Stress Layer Induced Carrier Mobility Enhancement in Silicon.
Material Research Society (MRS), San Francisco, CA, USA, 24.-28.03.2008, [Conference or Workshop Item]

Wessely, Frank ; Rispal, Lorraine ; Schwalke, Udo (2007):
Mix-and-Match Lithography Based Ultrathin-body SOI Nanowires and Schottky-S/D-FETs.
In: Proceedings of Semiconductor Advances for Future Electronics (SAFE), pp. 478-481. [Article]

Wessely, Frank ; Ruland, Tino ; Schwalke, Udo (2007):
Characterization of Carbon Nanotube Field Effect Transistor (CNTFET) Fabrication Process by Atomic Force Microscopy (AFM) and Conductive-AFM.
European Congress on Advanced Materials and Processes (EUROMAT), Nürnberg, Deutschland, 10.-13.09.2007, [Conference or Workshop Item]

Wessely, Frank ; Ruland, Tino ; Schwalke, Udo (2007):
Fabrication and Characterisation of Nanoscale Schottky-S/D-MOSFETs and Gated Nanowire Devices on Ultra Thin Body SOI Material.
European Congress on Advanced Materials and Processes (EUROMAT), Nürnberg, Deutschland, 10.-13.09.2007, [Conference or Workshop Item]

Z

Zaunert, Florian (2009):
Simulation und vergleichende elektrische Bewertung von planaren und 3D-MOS-Strukturen mit high-k Gate-Dielektrika.
Darmstadt, Deutschland, Darmstädter Dissertationen, Institut für Halbleitertechnik und Nanoelektronik,
[Ph.D. Thesis]

Zaunert, Florian ; Endres, Ralf ; Schwalke, Udo (2007):
Device and Stress Simulation of MOSFETs with Crystalline High-k Gate-Dielectrics Manufactured with Replacement Gate Process.
In: Proceedings of Semiconductor Advances for Future Electronics (SAFE) 2007, pp. 488-491. [Article]

Zaunert, Florian ; Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2007):
Evaluation of MOSFETs with Crystalline High-K Gate-Dielectrics: Device Simulation and Experimental Data.
In: Journal of Telecommunications and Technology, 2, pp. 78-85. [Article]

Zaunert, Florian ; Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2006):
Evaluation of MOSFETs with Crystalline High-k Gate-dielectrics: Device Simulation and Experimental Data.
7th Symposium Diagnostics & Yield - Advanced Silicon Devices and Technologies for ULSI Era, Warschau, Polen, 25.-28.06.2006, [Conference or Workshop Item]

This list was generated on Sun Jul 3 01:15:12 2022 CEST.