Englisch

Stefanov, Yordan (2012)
The Application of Atomic Force Microscopy in Semiconductor Technology - Towards High-K Gate Dielectric Integration.
Technische Universität Darmstadt
Dissertation, Erstveröffentlichung

Endres, Ralf ; Stefanov, Yordan ; Wessely, Frank ; Zaunert, Florian ; Schwalke, Udo (2008)
Process Damage-free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K.
In: Microelectronic Engineering, 85 (1)
Artikel, Bibliographie

Stefanov, Yordan ; Schwalke, Udo
Hrsg.: Li, Yuzhuo (2007)
Shallow Trench Isolation Chemical Mechanical Planarization.
In: Microelectronic Applications of Chemical Mechanical Planarization
Buchkapitel, Bibliographie

Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2007)
Electrical Characterization of Crystalline Gd2O3 Gate Dielectric MOSFETs Fabricated by Damascene Metal Gate Technology.
In: Microelectronics Reliability, 47 (4-5)
Artikel, Bibliographie

Zaunert, Florian ; Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2007)
Evaluation of MOSFETs with Crystalline High-K Gate-Dielectrics: Device Simulation and Experimental Data.
In: Journal of Telecommunications and Technology, 2
Artikel, Bibliographie

Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2006)
Electrical Performance of Damascene Metal Gate MOSFETs with Crystalline Gd2O3 Gate Dielectric.
37th IEEE Semiconductor Interface Specialists Conference (SISC). San Diego, CA, USA (07.12.2006-09.12.2006)
Konferenzveröffentlichung, Bibliographie

Rispal, Lorraine ; Ruland, Tino ; Stefanov, Yordan ; Wessely, Frank ; Schwalke, Udo (2006)
Conductive AFM Measurements on Carbon Nanotubes and Application for CNTFET Characterization.
In: ECS Transactions, 3 (2)
Artikel, Bibliographie

Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2006)
Damascene Metal Gate Technology for Gentle Integration of Crystalline High-K-Gate Dielectrics.
In: ECS Transactions, 3 (2)
Artikel, Bibliographie

Endres, Ralf ; Stefanov, Yordan ; Wessely, Frank ; Zaunert, Florian ; Schwalke, Udo (2006)
Process Damage-Free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K Gate Dielectrics.
3rd International Symposium on Advanced Gate Stack Technology (ISAGST). Austin, TX, USA (27.09.2006-29.09.2006)
Konferenzveröffentlichung, Bibliographie

Gottlob, H. D. B. ; Echtermeyer, T. ; Mollenhauer, T. ; Schmidt, M. ; Efavi, J. ; Wahlbrink, T. ; Lemme, L. M. ; Kurz, H. ; Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo ; Czernohorsky, M. ; Bugiel, E. ; Fissel, A. ; Osten, H. J. (2006)
Approaches to CMOS Integration of Epitaxial Gadolinium Oxide High-K Dielectrics.
In: Proceedings of the 36th European Solid-State Device Research Conference (ESSDERC)
Artikel, Bibliographie

Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2006)
Epitaxial High-K Oxide Metal Gate MOSFETs: Damascene CMP Process Integration and Electrical Results.
In: Japanese Journal of Applied Physics
Artikel, Bibliographie

Zaunert, Florian ; Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2006)
Evaluation of MOSFETs with Crystalline High-k Gate-dielectrics: Device Simulation and Experimental Data.
7th Symposium Diagnostics & Yield - Advanced Silicon Devices and Technologies for ULSI Era. Warschau, Polen (25.06.2006-28.06.2006)
Konferenzveröffentlichung, Bibliographie

Rispal, Lorraine ; Wessely, Frank ; Stefanov, Yordan ; Ruland, Tino ; Schwalke, Udo (2006)
CMOS-compatible Fabrication Process of Carbon-Nanotube-Field-Effect Transistors.
IEEE EDS Workshop on Advanced Electron Devices. Fraunhofer-Institut IMS, Duisburg, Deutschland (13.06.2006-14.06.2006)
Konferenzveröffentlichung, Bibliographie

Rispal, Lorraine ; Stefanov, Yordan ; Wessely, Frank ; Schwalke, Udo (2006)
Carbon Nanotube Transistor Fabrication Assisted by Topographical and Conductive Atomic Force Microscopy.
In: Japanese Journal of Applied Physics, 45
Artikel, Bibliographie

Marathe, Vaibhav G. ; Stefanov, Yordan ; Schwalke, Udo ; DasGupta, Nandita (2006)
Study of Pinholes in Ultrathin SiO2 by C-AFM Technique.
In: Thin Solid Films, 504 (1-2)
Artikel, Bibliographie

Stefanov, Yordan ; Cilek, F. ; Endres, Ralf ; Schwalke, Udo (2005)
Alternative Optimization Techniques for Shallow Trench Isolation and Replacement Gate Technology CMP.
The 2nd Pacific-Rim International Conference on Planarization CMP and Its Application Technology (PacRim-CMP). Seoul, Korea (17.11.2005-19.11.2005)
Konferenzveröffentlichung, Bibliographie

Stefanov, Yordan ; Singh, Ravneet ; DasGupta, Nandita ; Misra, Pankaj ; Schwalke, Udo (2005)
Conductive Atomic Force Microscopy Study of Leakage Currents Through Microscopic Structural Defects in High-K Gate Dielectrics.
In: Proceedings of The Electrochemical Society Conference "Crystalline Defects and Contamination" (ECS-DECON)
Artikel, Bibliographie

Rispal, Lorraine ; Stefanov, Yordan ; Heller, Rudolf ; Tzschöckel, Gerhard ; Hess, Gisela ; Haberle, Klaus ; Schwalke, Udo (2005)
Topographic and Conductive AFM Measurements on Carbon Nanotube Field-Effect Transistors Fabricated by In-Situ Chemical Vapor Deposition.
International Conference on Solid State Devices and Materials (SSDM). Kobe, Japan (12.09.2005-15.09.2005)
Konferenzveröffentlichung, Bibliographie

Rispal, Lorraine ; Stefanov, Yordan ; Schwalke, Udo (2005)
Atomic Force Microscopy (AFM) and Electrical Characterization of Carbon Nanotube (CNT) Devices Fabricated by Chemical Vapour Deposition.
Nanoscale III. Santa Barbara, CA, USA (13.08.2005-16.08.2005)
Konferenzveröffentlichung, Bibliographie

Gottlob, H. D. B. ; Lemme, M. C. ; Mollenhauer, T. ; Wahlbrink, T. ; Efavi, J. K. ; Kurz, H. ; Stefanov, Yordan ; Haberle, Klaus ; Komaragiri, Rama Subrahmanyam ; Ruland, Tino ; Zaunert, Florian ; Schwalke, Udo (2005)
Introduction of Crystalline High-k Gate Dielectrics in a CMOS Process.
In: Journal of Non-Crystalline Solids, 351 (21-23)
Artikel, Bibliographie

Stefanov, Yordan ; Komaragiri, Rama ; Schwalke, Udo (2005)
Technological Advances for Memory Applications: Crystalline High-K Gate Dielectrics and Alternatively Doped Gates.
In: Proceedings of the 1st International Conference on Memory Technology and Design (ICMTD)
Artikel, Bibliographie

Schwalke, Udo ; Stefanov, Yordan (2005)
Process Integration and Nanometer-Scale Electrical Characterization of Crystalline High-k Gate Dielectrics.
In: Microelectronics Reliability, 45 (5-6)
Artikel, Bibliographie

Stefanov, Yordan ; Ruland, Tino ; Schwalke, Udo (2004)
Electrical AFM Measurements for Evaluation of Nitride Erosion in Shallow Trench Isolation Chemical Mechanical Planarization.
In: Proceedings of the MRS Fall Meeting 2004
Artikel, Bibliographie

Stefanov, Yordan ; Komaragiri, Rama Subrahmanyam ; Schwalke, Udo (2004)
Device Level and Nanoscale Electrical Characterization of Crystalline Praseodymium Oxide High-k Gate Dielectric MOSFETs.
In: Proceedings of the SEMATECH International Workshop on Electrical Characterization and Reliability for High-K Devices
Artikel, Bibliographie

Ruland, Tino ; Stefanov, Yordan ; Rispal, Lorraine ; Schwalke, Udo (2004)
Application of Atomic Force Microscopy in Resist Structure Evaluation.
In: VDI/VDE-Gesellschaft Mess- und Automatisierungstechnik, (1860)
Artikel, Bibliographie

Stefanov, Yordan ; Komaragiri, Rama Subrahmanyam ; Ruland, Tino ; Schwalke, Udo (2004)
Electrical AFM Measurements for STI CMP Erosion Evaluation.
In: Nanoscale International Conference: Abstracts
Artikel, Bibliographie

Stefanov, Yordan ; Hess, Gisela ; Tzschöckel, Gerhard ; Schwalke, Udo (2004)
Global and Local Charge Trapping Effects in Crystalline Praseodymium Oxide High-K Gate Dielectric MOSFETs.
In: Proceedings of the 3rd International Conference on Semiconductor Technology (ICST)
Artikel, Bibliographie

Schwalke, Udo ; Stefanov, Yordan (2004)
Process Integration and Electrical Characterization of Crystalline High-K Gate Dielectrics.
13th Workshop on Dielectrics in Microelectronics (WoDIM). Kinsale, Irland (28.06.2004-30.06.2004)
Konferenzveröffentlichung, Bibliographie

Schwalke, Udo ; Stefanov, Yordan ; Komaragiri, Rama Subrahmanyam ; Ruland, Tino (2003)
Electrical Characterisation of Crystalline Praseodymium Oxide High-K Gate Dielectric MOSFETs.
In: Proceedings of the 33rd European Solid State Device Research Conference (ESSDERC)
Artikel, Bibliographie

Komaragiri, Rama Subrahmanyam ; Schwalke, Udo ; Stefanov, Yordan ; Ruland, Tino (2003)
Comparison of Praseodymium Oxide Gate MOSFETs with Conventional SiO2 MOSFETs: A Simulation Study.
In: Proceedings of the International Workshop on Physics of Semiconductor Devices (IWPSD)
Artikel, Bibliographie