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Number of items: 56.

2018

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2018):
Reconfigurable electrostatically doped 2.5-gate planar field-effect transistors for dopant-free CMOS.
In: 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS), Taormina, Sizilien, 9-12 April 2018, DOI: 10.1109/DTIS.2018.8368567,
[Online-Edition: https://doi.org/10.1109/DTIS.2018.8368567],
[Conference or Workshop Item]

2017

Schwalke, Udo and Krauss, Tillmann and Wessely, Frank
Prof. Schwalke, Udo (Corporate Creator) (2017):
Field effect transistor arrangement.
[Standards, patents]

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2017):
Fabrication and Simulation of Electrically Reconfigurable Dual Metal-gate Planar Field-effect Transistors for Dopant-free CMOS.
In: 12th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Online-Edition: https://doi.org/10.1109/DTIS.2017.7930155],
[Article]

2016

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2016):
Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications.
In: PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS), Honolulu, Hawaii, USA, 02.-07.10.2016, [Online-Edition: http://prime-intl.org/],
[Conference or Workshop Item]

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2016):
Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications.
In: ECS Transactions, pp. 57-63, 75, (13), [Article]

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2016):
Electrically Reconfigurable Dual Metal-gate Planar Field-effect Transistor for Dopant-free CMOS.
In: International Conference on Micro & Nano Electronic Systems, Leipzig, Germany, 21.-24.03.2016, [Online-Edition: http://dx.doi.org/10.1109/SSD.2016.7473724],
[Conference or Workshop Item]

2015

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2015):
Electrostatically Doped Planar Field-Effect Transistor for High Temperature Applications.
In: ECS Journal of Solid State Science and Technology, pp. Q46-Q50, 4, (5), [Online-Edition: http://dx.doi.org/10.1149/2.0021507jss],
[Article]

2014

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2014):
Feldeffekttransistor-Anordnung.
[Online-Edition: https://depatisnet.dpma.de/DepatisNet/depatisnet?action=bibd...],
[Standards, patents]

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2014):
Field Effect Transistor Arrangement.
[Online-Edition: https://patentscope.wipo.int/search/en/detail.jsf?docId=WO20...],
[Standards, patents]

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2014):
Novel Electrostatically Doped Planar Field-effect Transistor for High Temperature Applications.
In: ECS Transactions, pp. 11-24, 64, (12), [Online-Edition: http://dx.doi.org/10.1149/06412.0011ecst ],
[Article]

Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2014):
An Electrostatically Doped Planar Device Concept.
In: 9th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Online-Edition: http://dx.doi.org/10.1109/DTIS.2014.6850650],
[Article]

2013

Schwalke, Udo and Wessely, Frank and Krauss, Tillmann (2013):
Simulation and Experimental Verification: Dopant-free Si-Nanowire CMOS Technology on Silicon-on-Insulator Material.
In: 8th International Design and Test Symposium (IDT), Marrakesh, Morocco, 16.-18.12.2013, [Online-Edition: http://idtsymposium.org/],
[Conference or Workshop Item]

Wessely, Frank and Krauss, Tillmann and Schwalke, Udo (2013):
Reconfigurable CMOS with Undoped Silicon Nanowire Midgap Schottky-barrier FETs.
In: Microelectronics Journal, pp. 1072-1076, 44, (12), [Online-Edition: http://dx.doi.org/10.1016/j.mejo.2012.08.004],
[Article]

Schwalke, Udo and Krauss, Tillmann and Wessely, Frank
Prof. Schwalke, Udo (Corporate Creator) (2013):
Feldeffekttransistor-Anordnung.
[Standards, patents]

Schwalke, Udo and Wessely, Frank and Krauss, Tillmann (2013):
Dopant-free CMOS on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications.
In: ECS Transactions, pp. 105-114, 53, (5), [Online-Edition: http://dx.doi.org/10.1149/05305.0105ecst],
[Article]

Schwalke, Udo and Wessely, Frank and Krauss, Tillmann (2013):
CMOS without Doping on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications.
In: ECS Journal of Solid State Science and Technology, pp. Q88-Q93, 2, (6), [Online-Edition: http://dx.doi.org/10.1149/2.002307jss],
[Article]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Riedinger, Bernadette and Schwalke, Udo (2013):
Transfer-free grown bilayer graphene transistors for digital applications.
In: Solid-State Electronics, pp. 86-90, 81, [Online-Edition: http://dx.doi.org/10.1016/j.sse.2012.12.008],
[Article]

2012

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Riedinger, Bernadette and Schwalke, Udo (2012):
In-Situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio in Silicon CMOS Compatible Processing.
In: Advances in Science and Technology, pp. 258-265, 77, [Online-Edition: http://dx.doi.org/10.4028/www.scientific.net/AST.77.258],
[Article]

Keyn, Martin and Wessely, Frank and Schwalke, Udo (2012):
Large-scale Parallelization of In Situ CCVD Grown Carbon Nanotubes for Power Devices.
In: Junior Euromat 2012, Lausanne, Switzerland, 23.-27.07.2012, [Online-Edition: http://www.dgm.de/tagungen/?tgnr=1178&edate=27.07.2012&lg=en...],
[Conference or Workshop Item]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Riedinger, Bernadette and Schwalke, Udo (2012):
CCVD Assisted and Transfer-free Fabrication of Graphene Devices.
In: Graphene Week 2012, Delft, Netherlands, 04.-08.06.2012, [Online-Edition: http://www.graphene-week.eu/],
[Conference or Workshop Item]

Wessely, Frank and Krauss, Tillmann and Schwalke, Udo (2012):
Dopant-free CMOS: A New Device Concept.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), pp. 1-3, [Online-Edition: http://dx.doi.org/10.1109/DTIS.2012.6232949],
[Article]

Keyn, Martin and Wessely, Pia Juliane and Wessely, Frank and Rispal, Lorraine and Palm, Johannes and Schwalke, Udo (2012):
Feasibility Study on In Situ CCVD Grown CNTs for Field-Effect Power Device Applications.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), pp. 1-3, [Online-Edition: http://dx.doi.org/10.1109/DTIS.2012.6232952],
[Article]

Schwalke, Udo and Wessely, Pia Juliane and Wessely, Frank and Keyn, Martin and Rispal, Lorraine (2012):
Nanoelectronics: From Silicon to Graphene.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Online-Edition: http://dx.doi.org/10.1109/DTIS.2012.6232951],
[Article]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Riedinger, Bernadette and Schwalke, Udo (2012):
On/Off-Current Ratios of Transfer-free Bilayer Graphene FETs as a Function of Temperature.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Online-Edition: http://dx.doi.org/10.1109/DTIS.2012.6232950],
[Article]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Riedinger, Bernadette and Schwalke, Udo (2012):
On/Off-Current Ratios of In-Situ CCVD Grown Bilayer Graphene FETs as a Function of Temperature.
In: 221th Meeting of the Electrochemical Society, Seattle, WA, USA, 06.-11.05.2012, [Online-Edition: http://link.aip.org/link/?ECA/1201/755],
[Conference or Workshop Item]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Riedinger, Bernadette and Schwalke, Udo (2012):
Device Characteristics of In Situ CCVD Grown Bilayer Graphene FETs at Elevated Temperatures.
In: ECS Transactions, pp. 23-30, 45, (4), [Online-Edition: http://dx.doi.org/10.1149/1.3700449],
[Article]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Schwalke, Udo and Riedinger, Bernadette (2012):
Transfer-free Fabrication of Graphene Transistors.
In: Journal of Vacuum Science & Technology B, pp. 03D114-1, 30, (3), [Online-Edition: http://dx.doi.org/10.1116/1.4711128],
[Article]

Wessely, Frank and Krauss, Tillmann and Schwalke, Udo (2012):
Virtually Dopant-free CMOS: Midgap Schottky-barrier Nanowire Field-Effect-Transistors for High Temperature Applications.
In: Solid-State Electronics, pp. 91-96, 74, [Online-Edition: http://dx.doi.org/10.1016/j.sse.2012.04.017],
[Article]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Schwalke, Udo (2012):
In-Situ CCVD Silicon CMOS Compatible Processing of Bilayer Graphene Transistors with Ultra-High On/Off-Current Ratio.
In: Spring Meeting & Exhibit 2012 of the Materials Research Society, San Francisco, CA, USA, 09.-13.04.2012, [Online-Edition: http://www.mrs.org/s12-program-ee/#tab4],
[Conference or Workshop Item]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Riedinger, Bernadette and Schwalke, Udo (2012):
Transfer-free Grown Bilayer Graphene Transistors with Ultra-high On/Off-Current Ratio.
In: Graphene 2012, Brussels, Belgium, 10.-13.04.2012, [Online-Edition: http://www.phantomsnet.net/Graphene_Conf/2012/Abstracts/2012...],
[Conference or Workshop Item]

Wessely, Frank and Krauss, Tillmann and Schwalke, Udo (2012):
CMOS without Doping: Multi-gate Silicon-Nanowire Field-Effect-Transistors.
In: Solid-State Electronics, pp. 33-38, 70, [Online-Edition: http://dx.doi.org/10.1016/j.sse.2011.11.011],
[Article]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Riedinger, Bernadette and Schwalke, Udo (2012):
Hysteresis of In Situ CCVD Grown Graphene Transistors.
In: Electrochemical and Solid-State Letters, pp. K31-K34, 15, (4), [Online-Edition: http://dx.doi.org/10.1149/2.019204esl],
[Article]

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Schwalke, Udo (2012):
In Situ CCVD Grown Bilayer Graphene Transistor.
In: ECS Transactions, pp. 1-5, 41, (40), [Online-Edition: http://dx.doi.org/10.1149/1.3703508],
[Article]

2011

Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Beckmann, Karsten and Riedinger, Bernadette and Schwalke, Udo (2011):
Silicon-CMOS Compatible In-situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio.
In: Physica E: Low-dimensional Systems and Nanostructures, pp. 1132-1135, 44, (7-8), [Online-Edition: http://dx.doi.org/10.1016/j.physe.2011.12.022],
[Article]

Endres, Ralf and Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2011):
Damascene TiN-Gd2O3-Gate Stacks: Gentle Fabrication and Electrical Properties.
In: Microelectronic Engineering, pp. 3393-3398, 88, (12), [Online-Edition: http://dx.doi.org/10.1016/j.mee.2010.05.013],
[Article]

Schwalke, Udo and Wessely, Pia Juliane and Wessely, Frank and Birinci, Emrah and Keyn, Martin and Rispal, Lorraine (2011):
In-situ CCVD Growth of Hexagonal Carbon for CMOS-Compatible Nanoelectronics: From Nanotube Field-Effect Devices to Graphene Transistors.
In: 12th Trends in Nanotechnology International Conference (TNT), Tenerife, Canary Islands, Spain, 21.-25.11.2011, [Online-Edition: http://www.tntconf.org/2011/abstracts_TNT2011/TNT2011_Schwal...],
[Conference or Workshop Item]

Wessely, Frank and Krauss, Tillmann and Schwalke, Udo (2011):
CMOS without Doping: Midgap Schottky-Barrier Nanowire Field-Effect-Transistors for High-Temperature Applications.
In: Proceedings of the 41th European Solid-State Device Research Conference (ESSDERC), pp. 263-266, [Online-Edition: http://dx.doi.org/10.1109/ESSDERC.2011.6044184],
[Article]

Wessely, Frank (2011):
CMOS ohne Dotierstoffe: Neuartige siliziumbasierte Nanodraht-Feldeffekt-Bauelemente.
Darmstadt, Deutschland, Darmstädter Dissertationen, TU Darmstadt, [Online-Edition: urn:nbn:de:tuda-tuprints-26612],
[Ph.D. Thesis]

Ginsel, Pia Juliane and Wessely, Frank and Birinci, Emrah and Schwalke, Udo (2011):
Production of Graphene Layers by Means of CVD for Field Effect Device Fabrication.
In: ImageNano, Bilbao, Spanien, 11.-14.04.2011, [Online-Edition: http://www.imaginenano.com/],
[Conference or Workshop Item]

Ginsel, Pia Juliane and Wessely, Frank and Birinci, Emrah and Schwalke, Udo (2011):
CVD Assisted Fabrication of Graphene Layers for Field Effect Device Fabrication.
In: 6th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS), [Online-Edition: http://dx.doi.org/10.1109/DTIS.2011.5941438],
[Article]

Wessely, Frank and Krauss, Tillmann and Schwalke, Udo (2011):
Multi-Gate Voltage Selectable Silicon-Nanowire-FETs.
In: Proceedings of the Seventh Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EuroSOI), pp. 41-42, [Article]

2010

Wessely, Frank and Krauss, Tillmann and Endres, Ralf and Schwalke, Udo (2010):
Novel Application of Wafer-bonded MultiSOI: Junctionless Nanowire Transistors for CMOS Logic.
In: ECS Transactions, pp. 169-173, 33, (4), [Online-Edition: http://dx.doi.org/10.1149/1.3483505],
[Article]

Wessely, Frank and Krauss, Tillmann and Schwalke, Udo (2010):
Dopant-Independent and Voltage-Selectable Silicon-Nanowire-CMOS Technology for Reconfigurable Logic Applications.
In: Proceedings of the 40th European Solid-State Device Research Conference (ESSDERC), pp. 356-358, [Online-Edition: http://dx.doi.org/10.1109/ESSDERC.2010.5617754],
[Article]

Wessely, Frank and Krauss, Tillmann and Endres, Ralf and Schwalke, Udo (2010):
Dopant Free Multi-Gate Silicon Nanowire CMOS-Inverter on SOI Substrate.
In: 5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS), pp. 1-3, [Online-Edition: http://dx.doi.org/10.1109/DTIS.2010.5487572],
[Article]

2009

Endres, Ralf and Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2009):
Gentle Gate Last Integration and Electrical Characterization of TiN/Gd2O3/Si MOS Capacitors and Field Effect Transistors.
In: 40th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 03.-05.12.2009, [Conference or Workshop Item]

Endres, Ralf and Krauss, Tillmann and Wessely, Frank and Schwalke, Udo (2009):
Damascene Metal Gate Technology for Damage-free Gate-Last High-K Process Integration.
In: 3rd International Conference on Signals, Circuits and Systems (SCS), [Online-Edition: http://dx.doi.org/10.1109/ICSCS.2009.5414209],
[Article]

Wessely, Frank and Endres, Ralf and Schwalke, Udo (2009):
Scaling of the Damascene Metal Gate Integration Process via Electron Beam Lithography.
In: 3rd International Conference on Signals, Circuits and Systems (SCS), [Online-Edition: http://dx.doi.org/10.1109/ICSCS.2009.5414217],
[Article]

2008

Endres, Ralf and Wessely, Frank and Schwalke, Udo (2008):
CMP-based Gate Last High-K Integration.
In: Proceedings of the 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), pp. 544-547, [Online-Edition: http://www.stw.nl/NR/rdonlyres/678497B6-D48F-4F76-94AF-EB589...],
[Article]

Endres, Ralf and Stefanov, Yordan and Wessely, Frank and Zaunert, Florian and Schwalke, Udo (2008):
Process Damage-free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K.
In: Microelectronic Engineering, pp. 15-19, 85, (1), [Online-Edition: http://dx.doi.org/10.1016/j.mee.2007.03.008],
[Article]

2007

Wessely, Frank and Rispal, Lorraine and Schwalke, Udo (2007):
Mix-and-Match Lithography Based Ultrathin-body SOI Nanowires and Schottky-S/D-FETs.
In: Proceedings of Semiconductor Advances for Future Electronics (SAFE), pp. 478-481, [Online-Edition: http://www.stw.nl/NR/rdonlyres/ADD2FB2C-3AD4-4D1E-BA0A-1EAEA...],
[Article]

Wessely, Frank and Ruland, Tino and Schwalke, Udo (2007):
Characterization of Carbon Nanotube Field Effect Transistor (CNTFET) Fabrication Process by Atomic Force Microscopy (AFM) and Conductive-AFM.
In: European Congress on Advanced Materials and Processes (EUROMAT), Nürnberg, Deutschland, 10.-13.09.2007, [Conference or Workshop Item]

Wessely, Frank and Ruland, Tino and Schwalke, Udo (2007):
Fabrication and Characterisation of Nanoscale Schottky-S/D-MOSFETs and Gated Nanowire Devices on Ultra Thin Body SOI Material.
In: European Congress on Advanced Materials and Processes (EUROMAT), Nürnberg, Deutschland, 10.-13.09.2007, [Conference or Workshop Item]

2006

Rispal, Lorraine and Ruland, Tino and Stefanov, Yordan and Wessely, Frank and Schwalke, Udo (2006):
Conductive AFM Measurements on Carbon Nanotubes and Application for CNTFET Characterization.
In: ECS Transactions, pp. 441-448, 3, (2), [Online-Edition: http://dx.doi.org/10.1149/1.2356303],
[Article]

Endres, Ralf and Stefanov, Yordan and Wessely, Frank and Zaunert, Florian and Schwalke, Udo (2006):
Process Damage-Free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K Gate Dielectrics.
In: 3rd International Symposium on Advanced Gate Stack Technology (ISAGST), Austin, TX, USA, 27.-29.09.2006, [Conference or Workshop Item]

Rispal, Lorraine and Wessely, Frank and Stefanov, Yordan and Ruland, Tino and Schwalke, Udo (2006):
CMOS-compatible Fabrication Process of Carbon-Nanotube-Field-Effect Transistors.
In: IEEE EDS Workshop on Advanced Electron Devices, Fraunhofer-Institut IMS, Duisburg, Deutschland, 13.-14.06.2006, [Conference or Workshop Item]

Rispal, Lorraine and Stefanov, Yordan and Wessely, Frank and Schwalke, Udo (2006):
Carbon Nanotube Transistor Fabrication Assisted by Topographical and Conductive Atomic Force Microscopy.
In: Japanese Journal of Applied Physics, pp. 3672-3679, 45, [Online-Edition: http://dx.doi.org/10.1143/JJAP.45.3672],
[Article]

This list was generated on Tue Nov 19 02:02:01 2019 CET.