2018

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2018)
Reconfigurable electrostatically doped 2.5-gate planar field-effect transistors for dopant-free CMOS.
Taormina, Sizilien (09.04.2018-12.04.2018)
doi: 10.1109/DTIS.2018.8368567
Konferenzveröffentlichung, Bibliographie

2017

Schwalke, Udo ; Krauss, Tillmann ; Wessely, Frank
Hrsg.: Prof. Schwalke, Udo (2017)
Field effect transistor arrangement.
Norm, Patent, Standard, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2017)
Fabrication and Simulation of Electrically Reconfigurable Dual Metal-gate Planar Field-effect Transistors for Dopant-free CMOS.
In: 12th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Buchkapitel, Bibliographie

2016

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2016)
Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications.
PRiME 2016 / 230th Meeting of the Electrochemical Society (ECS). Honolulu, Hawaii, USA (02.10.2016-07.10.2016)
Konferenzveröffentlichung, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2016)
Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications.
In: ECS Transactions, 75 (13)
Artikel, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2016)
Electrically Reconfigurable Dual Metal-gate Planar Field-effect Transistor for Dopant-free CMOS.
International Conference on Micro & Nano Electronic Systems. Leipzig, Germany (21.03.2016-24.03.2016)
Konferenzveröffentlichung, Bibliographie

2015

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2015)
Electrostatically Doped Planar Field-Effect Transistor for High Temperature Applications.
In: ECS Journal of Solid State Science and Technology, 4 (5)
Artikel, Bibliographie

2014

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2014)
Feldeffekttransistor-Anordnung.
Norm, Patent, Standard, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2014)
Field Effect Transistor Arrangement.
Norm, Patent, Standard, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2014)
Novel Electrostatically Doped Planar Field-effect Transistor for High Temperature Applications.
In: ECS Transactions, 64 (12)
Artikel, Bibliographie

Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2014)
An Electrostatically Doped Planar Device Concept.
In: 9th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

2013

Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann (2013)
Simulation and Experimental Verification: Dopant-free Si-Nanowire CMOS Technology on Silicon-on-Insulator Material.
8th International Design and Test Symposium (IDT). Marrakesh, Morocco (16.12.2013-18.12.2013)
Konferenzveröffentlichung, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2013)
Reconfigurable CMOS with Undoped Silicon Nanowire Midgap Schottky-barrier FETs.
In: Microelectronics Journal, 44 (12)
Artikel, Bibliographie

Schwalke, Udo ; Krauss, Tillmann ; Wessely, Frank
Hrsg.: Prof. Schwalke, Udo (2013)
Feldeffekttransistor-Anordnung.
Norm, Patent, Standard, Bibliographie

Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann (2013)
Dopant-free CMOS on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications.
In: ECS Transactions, 53 (5)
Artikel, Bibliographie

Schwalke, Udo ; Wessely, Frank ; Krauss, Tillmann (2013)
CMOS without Doping on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications.
In: ECS Journal of Solid State Science and Technology, 2 (6)
Artikel, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2013)
Transfer-free grown bilayer graphene transistors for digital applications.
In: Solid-State Electronics, 81
Artikel, Bibliographie

2012

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012)
In-Situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio in Silicon CMOS Compatible Processing.
In: Advances in Science and Technology, 77
Artikel, Bibliographie

Keyn, Martin ; Wessely, Frank ; Schwalke, Udo (2012)
Large-scale Parallelization of In Situ CCVD Grown Carbon Nanotubes for Power Devices.
Junior Euromat 2012. Lausanne, Switzerland (23.07.2012-27.07.2012)
Konferenzveröffentlichung, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012)
CCVD Assisted and Transfer-free Fabrication of Graphene Devices.
Graphene Week 2012. Delft, Netherlands (04.06.2012-08.06.2012)
Konferenzveröffentlichung, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2012)
Dopant-free CMOS: A New Device Concept.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Keyn, Martin ; Wessely, Pia Juliane ; Wessely, Frank ; Rispal, Lorraine ; Palm, Johannes ; Schwalke, Udo (2012)
Feasibility Study on In Situ CCVD Grown CNTs for Field-Effect Power Device Applications.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Schwalke, Udo ; Wessely, Pia Juliane ; Wessely, Frank ; Keyn, Martin ; Rispal, Lorraine (2012)
Nanoelectronics: From Silicon to Graphene.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012)
On/Off-Current Ratios of Transfer-free Bilayer Graphene FETs as a Function of Temperature.
In: 7th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012)
On/Off-Current Ratios of In-Situ CCVD Grown Bilayer Graphene FETs as a Function of Temperature.
221th Meeting of the Electrochemical Society. Seattle, WA, USA (06.05.2012-11.05.2012)
Konferenzveröffentlichung, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012)
Device Characteristics of In Situ CCVD Grown Bilayer Graphene FETs at Elevated Temperatures.
In: ECS Transactions, 45 (4)
Artikel, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo ; Riedinger, Bernadette (2012)
Transfer-free Fabrication of Graphene Transistors.
In: Journal of Vacuum Science & Technology B, 30 (3)
Artikel, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2012)
Virtually Dopant-free CMOS: Midgap Schottky-barrier Nanowire Field-Effect-Transistors for High Temperature Applications.
In: Solid-State Electronics, 74
Artikel, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo (2012)
In-Situ CCVD Silicon CMOS Compatible Processing of Bilayer Graphene Transistors with Ultra-High On/Off-Current Ratio.
Spring Meeting & Exhibit 2012 of the Materials Research Society. San Francisco, CA, USA (09.04.2012-13.04.2012)
Konferenzveröffentlichung, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012)
Transfer-free Grown Bilayer Graphene Transistors with Ultra-high On/Off-Current Ratio.
Graphene 2012. Brussels, Belgium (10.04.2012-13.04.2012)
Konferenzveröffentlichung, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2012)
CMOS without Doping: Multi-gate Silicon-Nanowire Field-Effect-Transistors.
In: Solid-State Electronics, 70
Artikel, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Riedinger, Bernadette ; Schwalke, Udo (2012)
Hysteresis of In Situ CCVD Grown Graphene Transistors.
In: Electrochemical and Solid-State Letters, 15 (4)
Artikel, Bibliographie

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo (2012)
In Situ CCVD Grown Bilayer Graphene Transistor.
In: ECS Transactions, 41 (40)
Artikel, Bibliographie

2011

Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Beckmann, Karsten ; Riedinger, Bernadette ; Schwalke, Udo (2011)
Silicon-CMOS Compatible In-situ CCVD Grown Graphene Transistors with Ultra-high On/Off-Current Ratio.
In: Physica E: Low-dimensional Systems and Nanostructures, 44 (7-8)
Artikel, Bibliographie

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2011)
Damascene TiN-Gd2O3-Gate Stacks: Gentle Fabrication and Electrical Properties.
In: Microelectronic Engineering, 88 (12)
Artikel, Bibliographie

Schwalke, Udo ; Wessely, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Keyn, Martin ; Rispal, Lorraine (2011)
In-situ CCVD Growth of Hexagonal Carbon for CMOS-Compatible Nanoelectronics: From Nanotube Field-Effect Devices to Graphene Transistors.
12th Trends in Nanotechnology International Conference (TNT). Tenerife, Canary Islands, Spain (21.11.2011-25.11.2011)
Konferenzveröffentlichung, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2011)
CMOS without Doping: Midgap Schottky-Barrier Nanowire Field-Effect-Transistors for High-Temperature Applications.
In: Proceedings of the 41th European Solid-State Device Research Conference (ESSDERC)
Artikel, Bibliographie

Wessely, Frank (2011)
CMOS ohne Dotierstoffe: Neuartige siliziumbasierte Nanodraht-Feldeffekt-Bauelemente.
Technische Universität Darmstadt
Dissertation, Erstveröffentlichung

Ginsel, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo (2011)
Production of Graphene Layers by Means of CVD for Field Effect Device Fabrication.
ImageNano. Bilbao, Spanien (11.04.2011-14.04.2011)
Konferenzveröffentlichung, Bibliographie

Ginsel, Pia Juliane ; Wessely, Frank ; Birinci, Emrah ; Schwalke, Udo (2011)
CVD Assisted Fabrication of Graphene Layers for Field Effect Device Fabrication.
In: 6th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2011)
Multi-Gate Voltage Selectable Silicon-Nanowire-FETs.
In: Proceedings of the Seventh Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EuroSOI)
Artikel, Bibliographie

2010

Wessely, Frank ; Krauss, Tillmann ; Endres, Ralf ; Schwalke, Udo (2010)
Novel Application of Wafer-bonded MultiSOI: Junctionless Nanowire Transistors for CMOS Logic.
In: ECS Transactions, 33 (4)
Artikel, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Schwalke, Udo (2010)
Dopant-Independent and Voltage-Selectable Silicon-Nanowire-CMOS Technology for Reconfigurable Logic Applications.
In: Proceedings of the 40th European Solid-State Device Research Conference (ESSDERC)
Artikel, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Endres, Ralf ; Schwalke, Udo (2010)
Dopant Free Multi-Gate Silicon Nanowire CMOS-Inverter on SOI Substrate.
In: 5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

2009

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2009)
Gentle Gate Last Integration and Electrical Characterization of TiN/Gd2O3/Si MOS Capacitors and Field Effect Transistors.
40th IEEE Semiconductor Interface Specialists Conference (SISC). Arlington, VA, USA (03.12.2009-05.12.2009)
Konferenzveröffentlichung, Bibliographie

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2009)
Damascene Metal Gate Technology for Damage-free Gate-Last High-K Process Integration.
In: 3rd International Conference on Signals, Circuits and Systems (SCS)
Artikel, Bibliographie

Wessely, Frank ; Endres, Ralf ; Schwalke, Udo (2009)
Scaling of the Damascene Metal Gate Integration Process via Electron Beam Lithography.
In: 3rd International Conference on Signals, Circuits and Systems (SCS)
Artikel, Bibliographie

2008

Endres, Ralf ; Wessely, Frank ; Schwalke, Udo (2008)
CMP-based Gate Last High-K Integration.
In: Proceedings of the 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE)
Artikel, Bibliographie

Endres, Ralf ; Stefanov, Yordan ; Wessely, Frank ; Zaunert, Florian ; Schwalke, Udo (2008)
Process Damage-free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K.
In: Microelectronic Engineering, 85 (1)
Artikel, Bibliographie

2007

Wessely, Frank ; Rispal, Lorraine ; Schwalke, Udo (2007)
Mix-and-Match Lithography Based Ultrathin-body SOI Nanowires and Schottky-S/D-FETs.
In: Proceedings of Semiconductor Advances for Future Electronics (SAFE)
Artikel, Bibliographie

Wessely, Frank ; Ruland, Tino ; Schwalke, Udo (2007)
Characterization of Carbon Nanotube Field Effect Transistor (CNTFET) Fabrication Process by Atomic Force Microscopy (AFM) and Conductive-AFM.
European Congress on Advanced Materials and Processes (EUROMAT). Nürnberg, Deutschland (10.09.2007-13.09.2007)
Konferenzveröffentlichung, Bibliographie

Wessely, Frank ; Ruland, Tino ; Schwalke, Udo (2007)
Fabrication and Characterisation of Nanoscale Schottky-S/D-MOSFETs and Gated Nanowire Devices on Ultra Thin Body SOI Material.
European Congress on Advanced Materials and Processes (EUROMAT). Nürnberg, Deutschland (10.09.2007-13.09.2007)
Konferenzveröffentlichung, Bibliographie

2006

Rispal, Lorraine ; Ruland, Tino ; Stefanov, Yordan ; Wessely, Frank ; Schwalke, Udo (2006)
Conductive AFM Measurements on Carbon Nanotubes and Application for CNTFET Characterization.
In: ECS Transactions, 3 (2)
Artikel, Bibliographie

Endres, Ralf ; Stefanov, Yordan ; Wessely, Frank ; Zaunert, Florian ; Schwalke, Udo (2006)
Process Damage-Free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K Gate Dielectrics.
3rd International Symposium on Advanced Gate Stack Technology (ISAGST). Austin, TX, USA (27.09.2006-29.09.2006)
Konferenzveröffentlichung, Bibliographie

Rispal, Lorraine ; Wessely, Frank ; Stefanov, Yordan ; Ruland, Tino ; Schwalke, Udo (2006)
CMOS-compatible Fabrication Process of Carbon-Nanotube-Field-Effect Transistors.
IEEE EDS Workshop on Advanced Electron Devices. Fraunhofer-Institut IMS, Duisburg, Deutschland (13.06.2006-14.06.2006)
Konferenzveröffentlichung, Bibliographie

Rispal, Lorraine ; Stefanov, Yordan ; Wessely, Frank ; Schwalke, Udo (2006)
Carbon Nanotube Transistor Fabrication Assisted by Topographical and Conductive Atomic Force Microscopy.
In: Japanese Journal of Applied Physics, 45
Artikel, Bibliographie