Deutsch

Endres, Ralf (2011)
Gate-Last-Prozessintegration und elektrische Bewertung von High-k-Dielektrika und Metall-Elektroden in MOS-Bauelementen.
Technische Universität Darmstadt
Dissertation, Erstveröffentlichung

Endres, Ralf ; Schwalke, Udo (2010)
Prozessintegration und elektrische Charakterisierung von kristallinen Gd2O3 High-k Dielektrika.
VDE-Fachgruppentagung 8.5.6 - fWLR / Wafer Level Reliability. Erfurt, Deutschland (17.05.2010-18.05.2010)
Konferenzveröffentlichung, Bibliographie

Englisch

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2011)
Damascene TiN-Gd2O3-Gate Stacks: Gentle Fabrication and Electrical Properties.
In: Microelectronic Engineering, 88 (12)
Artikel, Bibliographie

Endres, Ralf ; Gottlob, H. D. B. ; Schmidt, M. ; Schwendt, D. ; Osten, H. J. ; Schwalke, Udo (2010)
Crystalline Gadolinium Oxide: A Promising High-K Candidate for Future CMOS Generations.
In: ECS Transactions, 33 (3)
Artikel, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Endres, Ralf ; Schwalke, Udo (2010)
Novel Application of Wafer-bonded MultiSOI: Junctionless Nanowire Transistors for CMOS Logic.
In: ECS Transactions, 33 (4)
Artikel, Bibliographie

Wessely, Frank ; Krauss, Tillmann ; Endres, Ralf ; Schwalke, Udo (2010)
Dopant Free Multi-Gate Silicon Nanowire CMOS-Inverter on SOI Substrate.
In: 5th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)
Artikel, Bibliographie

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2009)
Gentle Gate Last Integration and Electrical Characterization of TiN/Gd2O3/Si MOS Capacitors and Field Effect Transistors.
40th IEEE Semiconductor Interface Specialists Conference (SISC). Arlington, VA, USA (03.12.2009-05.12.2009)
Konferenzveröffentlichung, Bibliographie

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo (2009)
Damascene Metal Gate Technology for Damage-free Gate-Last High-K Process Integration.
In: 3rd International Conference on Signals, Circuits and Systems (SCS)
Artikel, Bibliographie

Wessely, Frank ; Endres, Ralf ; Schwalke, Udo (2009)
Scaling of the Damascene Metal Gate Integration Process via Electron Beam Lithography.
In: 3rd International Conference on Signals, Circuits and Systems (SCS)
Artikel, Bibliographie

Lemme, M. C. ; Gottlob, H. D. B. ; Echtermeyer, T. ; Kurz, H. ; Endres, Ralf ; Schwalke, Udo ; Czernohorsky, M. ; Osten, H. J. (2009)
Complementary Metal Oxide Semiconductor Integration of Epitaxial Gd2O3.
In: Journal of Vacuum Science & Technology B, 27 (1)
Artikel, Bibliographie

Endres, Ralf ; Wessely, Frank ; Schwalke, Udo (2008)
CMP-based Gate Last High-K Integration.
In: Proceedings of the 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE)
Artikel, Bibliographie

Lemme, M. C. ; Gottlob, H. D. B. ; Echtermeyer, T. ; Kurz, H. ; Endres, Ralf ; Schwalke, Udo ; Czernohorsky, M. ; Osten, H. J. (2008)
CMOS Integration of Epitaxial Gd2O3.
15th Workshop on Dielectrics in Microelectronics (WoDiM). Bad Saarow, Deutschland (23.06.2008-25.06.2008)
Konferenzveröffentlichung, Bibliographie

Endres, Ralf ; Stefanov, Yordan ; Wessely, Frank ; Zaunert, Florian ; Schwalke, Udo (2008)
Process Damage-free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K.
In: Microelectronic Engineering, 85 (1)
Artikel, Bibliographie

Endres, Ralf ; Schwalke, Udo (2008)
Damascene Metal Gate Technology for Damage-Free High-k Process Integration.
In: Proceedings of the 7th International Semiconductor Technology Conference (ISTC)
Artikel, Bibliographie

Zaunert, Florian ; Endres, Ralf ; Schwalke, Udo (2007)
Device and Stress Simulation of MOSFETs with Crystalline High-k Gate-Dielectrics Manufactured with Replacement Gate Process.
In: Proceedings of Semiconductor Advances for Future Electronics (SAFE) 2007
Artikel, Bibliographie

Endres, Ralf ; Schwalke, Udo (2007)
Damascene Metal Gate Technology: A Front-End CMP Based Universal Platform for High-k Evaluation at the Device Level.
In: Proceedings of the International Conference on Planarization Technology 2007 (ICPT)
Artikel, Bibliographie

Endres, Ralf ; Schwalke, Udo (2007)
Damascene Metal Gate Technology: A Novel Approach towards Nano CMOS Devices with Crystalline High-K Gate Dielectrics.
Nanotech Northern Europe (NTNE). Helsinki, Finnland (27.03.2007-29.03.2007)
Konferenzveröffentlichung, Bibliographie

Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2007)
Electrical Characterization of Crystalline Gd2O3 Gate Dielectric MOSFETs Fabricated by Damascene Metal Gate Technology.
In: Microelectronics Reliability, 47 (4-5)
Artikel, Bibliographie

Zaunert, Florian ; Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2007)
Evaluation of MOSFETs with Crystalline High-K Gate-Dielectrics: Device Simulation and Experimental Data.
In: Journal of Telecommunications and Technology, 2
Artikel, Bibliographie

Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2006)
Electrical Performance of Damascene Metal Gate MOSFETs with Crystalline Gd2O3 Gate Dielectric.
37th IEEE Semiconductor Interface Specialists Conference (SISC). San Diego, CA, USA (07.12.2006-09.12.2006)
Konferenzveröffentlichung, Bibliographie

Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2006)
Damascene Metal Gate Technology for Gentle Integration of Crystalline High-K-Gate Dielectrics.
In: ECS Transactions, 3 (2)
Artikel, Bibliographie

Endres, Ralf ; Stefanov, Yordan ; Wessely, Frank ; Zaunert, Florian ; Schwalke, Udo (2006)
Process Damage-Free Damascene Metal Gate Technology for Gentle Integration of Epitaxially Grown High-K Gate Dielectrics.
3rd International Symposium on Advanced Gate Stack Technology (ISAGST). Austin, TX, USA (27.09.2006-29.09.2006)
Konferenzveröffentlichung, Bibliographie

Gottlob, H. D. B. ; Echtermeyer, T. ; Mollenhauer, T. ; Schmidt, M. ; Efavi, J. ; Wahlbrink, T. ; Lemme, L. M. ; Kurz, H. ; Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo ; Czernohorsky, M. ; Bugiel, E. ; Fissel, A. ; Osten, H. J. (2006)
Approaches to CMOS Integration of Epitaxial Gadolinium Oxide High-K Dielectrics.
In: Proceedings of the 36th European Solid-State Device Research Conference (ESSDERC)
Artikel, Bibliographie

Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2006)
Epitaxial High-K Oxide Metal Gate MOSFETs: Damascene CMP Process Integration and Electrical Results.
In: Japanese Journal of Applied Physics
Artikel, Bibliographie

Zaunert, Florian ; Endres, Ralf ; Stefanov, Yordan ; Schwalke, Udo (2006)
Evaluation of MOSFETs with Crystalline High-k Gate-dielectrics: Device Simulation and Experimental Data.
7th Symposium Diagnostics & Yield - Advanced Silicon Devices and Technologies for ULSI Era. Warschau, Polen (25.06.2006-28.06.2006)
Konferenzveröffentlichung, Bibliographie

Stefanov, Yordan ; Cilek, F. ; Endres, Ralf ; Schwalke, Udo (2005)
Alternative Optimization Techniques for Shallow Trench Isolation and Replacement Gate Technology CMP.
The 2nd Pacific-Rim International Conference on Planarization CMP and Its Application Technology (PacRim-CMP). Seoul, Korea (17.11.2005-19.11.2005)
Konferenzveröffentlichung, Bibliographie

Ruland, Tino ; Endres, Ralf ; Schwalke, Udo (2005)
Application of Porous Silicon 2D Photonic Crystals as On-chip Interconnects.
European Congress on Advanced Materials and Processes (EUROMAT). Prag, Tschechien (05.09.2005-08.09.2005)
Konferenzveröffentlichung, Bibliographie

Ruland, Tino ; Endres, Ralf ; Schwalke, Udo (2005)
Nanoscale Electrical Characterization of Crystalline Praseodymium Oxide High-k Gate Dielectric MOSFETs with Conductive Atomic Force Microscopy.
European Congress on Advanced Materials and Processes (EUROMAT). Prag, Tschechien (05.09.2005-08.09.2005)
Konferenzveröffentlichung, Bibliographie