Englisch

Petzold, Stefan ; Sharath, S. U. ; Lemke, Jonas ; Hildebrandt, Erwin ; Trautmann, Christina ; Alff, Lambert (2019)
Heavy ion radiation effects on hafnium oxide-based resistive random access memory.
In: IEEE Transactions on Nuclear Science, 66 (7)
doi: 10.1109/TNS.2019.2908637
Artikel, Bibliographie

Petzold, S. ; Piros, E. ; Sharath, S. U. ; Zintler, Alexander ; Hildebrandt, Erwin ; Molina-Luna, Leopoldo ; Wenger, C. ; Alff, Lambert (2019)
Gradual Reset and Set Characteristics in Yttrium Oxide based Resistive Random Access Memory.
In: Semiconductor Science and Technology
doi: 10.1088/1361-6641/ab220f
Artikel, Bibliographie

Zintler, Alexander ; Kunz, Ulrike ; Pivak, Y. ; Sharath, S. U. ; Vogel, S. ; Kleebe, Hans-Joachim ; Alff, Lambert ; Molina-Luna, Leopoldo (2017)
FIB Based Fabrication of an Operative Pt/HfO2/TiN Device for Resistive Switching inside a Transmission Electron Microscope.
In: Ultramicroscopy, 181
doi: 10.1016/j.ultramic.2017.04.008
Artikel, Bibliographie

Zintler, A. ; Kunz, U. ; Pivak, Y. ; Sharath, S. U. ; Vogel, S. ; Hildebrandt, E. ; Kleebe, H.-J. ; Alff, L. ; Molina-Luna, L. (2017)
FIB based fabrication of an operative Pt/HfO 2 /TiN device for resistive switching inside a transmission electron microscope.
In: Ultramicroscopy, 181
doi: 10.1016/j.ultramic.2017.04.008
Artikel, Bibliographie

Sharath, S. U. ; Vogel, S. ; Molina-Luna, Leopoldo ; Hildebrandt, Erwin ; Kurian, J. ; Dürrschnabel, Michael ; Nierman, G. ; Niu, G. ; Calka, P. ; Lehmann, M. ; Kleebe, Hans-Joachim ; Wenger, C. ; Schroeder, T. ; Alff, Lambert (2017)
Control of switching modes and conductance quantization via oxygen engineering in HfOx based memristive devices.
In: Advanced Functional Materirials, 27
doi: 10.1002/adfm.201700432
Artikel, Bibliographie

Sharma, S. ; Hildebrandt, E. ; Sharath, S. U. ; Radulov, I. ; Alff, L. (2017)
YCo 5 ± x thin films with perpendicular anisotropy grown by molecular beam epitaxy.
In: Journal of Magnetism and Magnetic Materials, 432
doi: 10.1016/j.jmmm.2017.02.020
Artikel, Bibliographie

Sharma, S. ; Hildebrandt, E. ; Sharath, S. U. ; Radulov, I. ; Alff, L. (2017)
YCo5±xthin films with perpendicular anisotropy grown by molecular beam epitaxy.
In: Journal of Magnetism and Magnetic Materials, 432
doi: 10.1016/j.jmmm.2017.02.020
Artikel, Bibliographie

Niu, G. ; Schubert, M. A. ; Sharath, S. U. ; Zaumseil, P. ; Vogel, S. ; Wenger, C. ; Hildebrandt, E. ; Bhupathi, S. ; Perez, E. ; Alff, L. ; Lehmann, M. ; Schroeder, T. ; Niermann, T. (2017)
Electron holography on HfO2/HfO2−x bilayer structures with multilevel resistive switching properties.
In: Nanotechnology, 28 (21)
doi: 10.1088/1361-6528/aa6cd9
Artikel, Bibliographie

Niu, G. ; Schubert, M. A. ; Sharath, S. U. ; Zaumseil, P. ; Vogel, S. ; Wenger, C. ; Hildebrandt, E. ; Bhupathi, S. ; Perez, E. ; Alff, L. ; Lehmann, M. ; Schroeder, T. ; Niermann, T. (2017)
Electron holography on HfO2/HfO2−xbilayer structures with multilevel resistive switching properties.
In: Nanotechnology, 28 (21)
doi: 10.1088/1361-6528/aa6cd9
Artikel, Bibliographie

Rodenbücher, C. ; Hildebrandt, E. ; Szot, K. ; Sharath, S. U. ; Kurian, J. ; Komissinskiy, P. ; Breuer, U. ; Waser, R. ; Alff, L. (2016)
Hafnium carbide formation in oxygen deficient hafnium oxide thin films.
In: Applied Physics Letters, 108 (25)
doi: 10.1063/1.4954714
Artikel, Bibliographie

Sharath, S. U. ; Joseph, M. J. ; Vogel, S. ; Hildebrandt, E. ; Komissinskiy, P. ; Kurian, J. ; Schroeder, T. ; Alff, L. (2016)
Impact of oxygen stoichiometry on electroforming and multiple switching modes in TiN/TaOx/Pt based ReRAM.
In: Applied Physics Letters, 109 (17)
doi: 10.1063/1.4965872
Artikel, Bibliographie

Bick, D. S. ; Sharath, S. U. ; Hoffman, I. ; Major, M. ; Kurian, J. ; Alff, L. (2015)
(001) and (111) Single-Oriented Highly Epitaxial CeO2 Thin Films on r-Cut Sapphire Substrates.
In: Journal of Electronic Materials, 44 (8)
doi: 10.1007/s11664-015-3728-2
Artikel, Bibliographie

Hildebrandt, Erwin ; Yazdi, Mehrdad Baghaie ; Kurian, Jose ; Sharath, S. U. ; Wilhelm, Fabrice ; Rogalev, Andrei ; Alff, Lambert (2014)
Intrinsic versus extrinsic ferromagnetism in HfO2−x and Ni:HfO2−x thin films.
In: Physical Review B, 90 (13)
doi: 10.1103/PhysRevB.90.134426
Artikel, Bibliographie

Sharath, S. U. ; Bertaud, T. ; Kurian, J. ; Hildebrandt, E. ; Walczyk, C. ; Calka, P. ; Zaumseil, P. ; Sowinska, M. ; Walczyk, D. ; Gloskovskii, A. ; Schroeder, T. ; Alff, L. (2014)
Towards forming-free resistive switching in oxygen engineered HfO2−x.
In: Applied Physics Letters, 104 (6)
doi: 10.1063/1.4864653
Artikel, Bibliographie

Sharath, S. U. ; Kurian, J. ; Komissinskiy, P. ; Hildebrandt, E. ; Bertaud, T. ; Walczyk, C. ; Calka, P. ; Schroeder, T. ; Alff, L. (2014)
Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories.
In: Applied Physics Letters, 105 (7)
doi: 10.1063/1.4893605
Artikel, Bibliographie