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Towards forming-free resistive switching in oxygen engineered HfO2−x

Sharath, S. U. and Bertaud, T. and Kurian, J. and Hildebrandt, E. and Walczyk, C. and Calka, P. and Zaumseil, P. and Sowinska, M. and Walczyk, D. and Gloskovskii, A. and Schroeder, T. and Alff, L. (2014):
Towards forming-free resistive switching in oxygen engineered HfO2−x.
In: Applied Physics Letters, AIP Publishing LLC, pp. 063502, 104, (6), ISSN 0003-6951, [Online-Edition: http://dx.doi.org/10.1063/1.4864653],
[Article]

Abstract

We have investigated the resistive switching behavior in stoichiometric HfO2 and oxygen-deficient HfO2− x thin films grown on TiN electrodes using reactive molecular beam epitaxy. Oxygen defect states were controlled by the flow of oxygen radicals during thin film growth. Hard X-ray photoelectron spectroscopy confirmed the presence of sub-stoichiometric hafnium oxide and defect states near the Fermi level. The oxygen deficient HfO2− x thin films show bipolar switching with an electroforming occurring at low voltages and low operating currents, paving the way for almost forming-free devices for low-power applications.

Item Type: Article
Erschienen: 2014
Creators: Sharath, S. U. and Bertaud, T. and Kurian, J. and Hildebrandt, E. and Walczyk, C. and Calka, P. and Zaumseil, P. and Sowinska, M. and Walczyk, D. and Gloskovskii, A. and Schroeder, T. and Alff, L.
Title: Towards forming-free resistive switching in oxygen engineered HfO2−x
Language: English
Abstract:

We have investigated the resistive switching behavior in stoichiometric HfO2 and oxygen-deficient HfO2− x thin films grown on TiN electrodes using reactive molecular beam epitaxy. Oxygen defect states were controlled by the flow of oxygen radicals during thin film growth. Hard X-ray photoelectron spectroscopy confirmed the presence of sub-stoichiometric hafnium oxide and defect states near the Fermi level. The oxygen deficient HfO2− x thin films show bipolar switching with an electroforming occurring at low voltages and low operating currents, paving the way for almost forming-free devices for low-power applications.

Journal or Publication Title: Applied Physics Letters
Volume: 104
Number: 6
Publisher: AIP Publishing LLC
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 17 Nov 2014 13:13
Official URL: http://dx.doi.org/10.1063/1.4864653
Identification Number: doi:10.1063/1.4864653
Funders: IHP and TU Darmstadt authors are grateful for financial support by the Deutsche Forschungsgemeinschaft (DFG) under Project No. SCHR1123/7-1., Funding by the Federal Ministry of Education and Research (BMBF) under Contract Nos. 05KS7UM1, 05K10UMA, 05KS7WW3, and 05K10WW1 was gratefully acknowledged., P. Calka is grateful to AvH foundation for granting an AvH PostDoc fellowship.
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