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Towards forming-free resistive switching in oxygen engineered HfO2−x

Sharath, S. U. ; Bertaud, T. ; Kurian, J. ; Hildebrandt, E. ; Walczyk, C. ; Calka, P. ; Zaumseil, P. ; Sowinska, M. ; Walczyk, D. ; Gloskovskii, A. ; Schroeder, T. ; Alff, L. (2014)
Towards forming-free resistive switching in oxygen engineered HfO2−x.
In: Applied Physics Letters, 104 (6)
doi: 10.1063/1.4864653
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

We have investigated the resistive switching behavior in stoichiometric HfO2 and oxygen-deficient HfO2− x thin films grown on TiN electrodes using reactive molecular beam epitaxy. Oxygen defect states were controlled by the flow of oxygen radicals during thin film growth. Hard X-ray photoelectron spectroscopy confirmed the presence of sub-stoichiometric hafnium oxide and defect states near the Fermi level. The oxygen deficient HfO2− x thin films show bipolar switching with an electroforming occurring at low voltages and low operating currents, paving the way for almost forming-free devices for low-power applications.

Typ des Eintrags: Artikel
Erschienen: 2014
Autor(en): Sharath, S. U. ; Bertaud, T. ; Kurian, J. ; Hildebrandt, E. ; Walczyk, C. ; Calka, P. ; Zaumseil, P. ; Sowinska, M. ; Walczyk, D. ; Gloskovskii, A. ; Schroeder, T. ; Alff, L.
Art des Eintrags: Bibliographie
Titel: Towards forming-free resistive switching in oxygen engineered HfO2−x
Sprache: Englisch
Publikationsjahr: 10 Februar 2014
Verlag: AIP Publishing LLC
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Applied Physics Letters
Jahrgang/Volume einer Zeitschrift: 104
(Heft-)Nummer: 6
DOI: 10.1063/1.4864653
Kurzbeschreibung (Abstract):

We have investigated the resistive switching behavior in stoichiometric HfO2 and oxygen-deficient HfO2− x thin films grown on TiN electrodes using reactive molecular beam epitaxy. Oxygen defect states were controlled by the flow of oxygen radicals during thin film growth. Hard X-ray photoelectron spectroscopy confirmed the presence of sub-stoichiometric hafnium oxide and defect states near the Fermi level. The oxygen deficient HfO2− x thin films show bipolar switching with an electroforming occurring at low voltages and low operating currents, paving the way for almost forming-free devices for low-power applications.

Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Dünne Schichten
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften
Hinterlegungsdatum: 17 Nov 2014 13:13
Letzte Änderung: 17 Nov 2014 13:13
PPN:
Sponsoren: IHP and TU Darmstadt authors are grateful for financial support by the Deutsche Forschungsgemeinschaft (DFG) under Project No. SCHR1123/7-1., Funding by the Federal Ministry of Education and Research (BMBF) under Contract Nos. 05KS7UM1, 05K10UMA, 05KS7WW3, and 05K10WW1 was gratefully acknowledged., P. Calka is grateful to AvH foundation for granting an AvH PostDoc fellowship.
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