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Gradual Reset and Set Characteristics in Yttrium Oxide based Resistive Random Access Memory

Petzold, S. and Piros, E. and Sharath, S. U. and Zintler, Alexander and Hildebrandt, Erwin and Molina-Luna, Leopoldo and Wenger, C. and Alff, Lambert (2019):
Gradual Reset and Set Characteristics in Yttrium Oxide based Resistive Random Access Memory.
In: Semiconductor Science and Technology, ISSN 0268-1242,
DOI: 10.1088/1361-6641/ab220f,
[Online-Edition: https://iopscience.iop.org/article/10.1088/1361-6641/ab220f],
[Article]

Item Type: Article
Erschienen: 2019
Creators: Petzold, S. and Piros, E. and Sharath, S. U. and Zintler, Alexander and Hildebrandt, Erwin and Molina-Luna, Leopoldo and Wenger, C. and Alff, Lambert
Title: Gradual Reset and Set Characteristics in Yttrium Oxide based Resistive Random Access Memory
Language: English
Journal or Publication Title: Semiconductor Science and Technology
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Advanced Electron Microscopy (aem)
Date Deposited: 20 May 2019 05:31
DOI: 10.1088/1361-6641/ab220f
Official URL: https://iopscience.iop.org/article/10.1088/1361-6641/ab220f
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