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The role of the programming trajectory in the power dissipation dynamics and energy consumption of memristive devices.
In: IEEE Electron Device Letters, 45 (4)
doi: 10.1109/LED.2024.3368146
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Miranda, E. ; Piros, E. ; Aguirre, F. L. ; Kim, T. ; Schreyer, P. ; Gehrunger, J. ; Oster, T. ; Hofmann, K. ; Suñé, J. ; Hochberger, C. ; Alff, L. (2023)
Simulation of bipolar-type resistive switching devices using a recursive approach to the dynamic memdiode model.
In: IEEE Electron Device Letters, 44 (9)
doi: 10.1109/LED.2023.3298023
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Aguirre, F. ; Piros, E. ; Alff, L. ; Hochberger, C. ; Gehrunger, J. ; Petzold, S. ; Kaiser, N. ; Jalaguier, E. ; Nolot, E. ; Charpin-Nicolle, C. ; Vogel, T. ; Molina-Luna, L. ; Suñé, J. ; Miranda, E. (2022)
Compact model for oxygen engineered Yttrium oxide-based resistive switching devices.
2022 IEEE 22nd International Conference on Nanotechnology (NANO). Palma de Mallorca, Spain (04.07.2022 - 08.07.2022)
doi: 10.1109/NANO54668.2022.9928654
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Petzold, S. ; Piros, E. ; Sharath, S. U. ; Zintler, Alexander ; Hildebrandt, Erwin ; Molina-Luna, Leopoldo ; Wenger, C. ; Alff, Lambert (2019)
Gradual Reset and Set Characteristics in Yttrium Oxide based Resistive Random Access Memory.
In: Semiconductor Science and Technology
doi: 10.1088/1361-6641/ab220f
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Petzold, S. ; Miranda, E. ; Sharath, S.U. ; Munos-Gorriz, J. ; Vogel, T. ; Piros, E. ; Kaiser, N. ; Eilhardt, Robert ; Zintler, Alexander ; Molina-Luna, Leopoldo ; Sune, J. ; Alff, Lambert (2019)
Analysis and simulation of the multiple resistive switching modes occurring in HfOx-based resistive random access memories using memdiodes.
In: Journal of Applied Physics, (125)
doi: 10.1063/1.5094864
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