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Control of switching modes and conductance quantization via oxygen engineering in HfOx based memristive devices

Sharath, S. U. and Vogel, S. and Molina-Luna, Leopoldo and Hildebrandt, Erwin and Kurian, J. and Duerrschnabel, Michael and Nierman, G. and Niu, G. and Calka, P. and Lehmann, M. and Kleebe, Hans-Joachim and Wenger, C. and Schroeder, T. and Alff, Lambert (2017):
Control of switching modes and conductance quantization via oxygen engineering in HfOx based memristive devices.
In: Advanced Functional Materirials, Wiley-VCH Verlag GmbH, Weinheim, p. 1700432, 27, DOI: 10.1002/adfm.201700432,
[Article]

Abstract

Hafnium oxide (HfOx)‐based memristive devices have tremendous potential as nonvolatile resistive random access memory (RRAM) and in neuromorphic electronics. Despite its seemingly simple two‐terminal structure, a myriad of RRAM devices reported in the rapidly growing literature exhibit rather complex resistive switching behaviors. Using Pt/HfOx/TiN‐based metal–insulator–metal structures as model systems, it is shown that a well‐controlled oxygen stoichiometry governs the filament formation and the occurrence of multiple switching modes. The oxygen vacancy concentration is found to be the key factor in manipulating the balance between electric field and Joule heating during formation, rupture (reset), and reformation (set) of the conductive filaments in the dielectric. In addition, the engineering of oxygen vacancies stabilizes atomic size filament constrictions exhibiting integer and half‐integer conductance quantization at room temperature during set and reset. Identifying the materials conditions of different switching modes and conductance quantization contributes to a unified switching model correlating structural and functional properties of RRAM materials. The possibility to engineer the oxygen stoichiometry in HfOx will allow creating quantum point contacts with multiple conductance quanta as a first step toward multilevel memristive quantum devices.

Item Type: Article
Erschienen: 2017
Creators: Sharath, S. U. and Vogel, S. and Molina-Luna, Leopoldo and Hildebrandt, Erwin and Kurian, J. and Duerrschnabel, Michael and Nierman, G. and Niu, G. and Calka, P. and Lehmann, M. and Kleebe, Hans-Joachim and Wenger, C. and Schroeder, T. and Alff, Lambert
Title: Control of switching modes and conductance quantization via oxygen engineering in HfOx based memristive devices
Language: English
Abstract:

Hafnium oxide (HfOx)‐based memristive devices have tremendous potential as nonvolatile resistive random access memory (RRAM) and in neuromorphic electronics. Despite its seemingly simple two‐terminal structure, a myriad of RRAM devices reported in the rapidly growing literature exhibit rather complex resistive switching behaviors. Using Pt/HfOx/TiN‐based metal–insulator–metal structures as model systems, it is shown that a well‐controlled oxygen stoichiometry governs the filament formation and the occurrence of multiple switching modes. The oxygen vacancy concentration is found to be the key factor in manipulating the balance between electric field and Joule heating during formation, rupture (reset), and reformation (set) of the conductive filaments in the dielectric. In addition, the engineering of oxygen vacancies stabilizes atomic size filament constrictions exhibiting integer and half‐integer conductance quantization at room temperature during set and reset. Identifying the materials conditions of different switching modes and conductance quantization contributes to a unified switching model correlating structural and functional properties of RRAM materials. The possibility to engineer the oxygen stoichiometry in HfOx will allow creating quantum point contacts with multiple conductance quanta as a first step toward multilevel memristive quantum devices.

Journal or Publication Title: Advanced Functional Materirials
Volume: 27
Publisher: Wiley-VCH Verlag GmbH, Weinheim
Uncontrolled Keywords: HfO2, memristors, oxygen stoichiometry, quantum conductance, unified model
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Earth Science
11 Department of Materials and Earth Sciences > Earth Science > Geo-Material-Science
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Advanced Electron Microscopy (aem)
11 Department of Materials and Earth Sciences > Material Science > Dispersive Solids
Date Deposited: 06 Dec 2018 10:14
DOI: 10.1002/adfm.201700432
Funders: This work was supported by the Deutsche Forschungsgemeinschaft under project numbers AL560/13‐2 and SCHR1123/7‐2., Funding by the Federal Ministry of Education and Research (BMBF) under contract 16ES0250 is also gratefully acknowledged., The authors thank funding by ENIAC JU within the project PANACHE., The TU Darmstadt JEM ARM‐F (scanning) transmission electron microscope employed for this investigation was partially funded by the German Research Foundation (DFG/INST163/2951)., L.M.‐L. and M.D. acknowledge financial support from the Hessen State Ministry of Higher Education, Research and the Arts via LOEWE RESPONSE.
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