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Number of items: 4.

Petzold, S. ; Piros, E. ; Sharath, S. U. ; Zintler, Alexander ; Hildebrandt, Erwin ; Molina-Luna, Leopoldo ; Wenger, C. ; Alff, Lambert (2019):
Gradual Reset and Set Characteristics in Yttrium Oxide based Resistive Random Access Memory.
In: Semiconductor Science and Technology, ISSN 0268-1242,
DOI: 10.1088/1361-6641/ab220f,
[Article]

Sharath, S. U. ; Vogel, S. ; Molina-Luna, Leopoldo ; Hildebrandt, Erwin ; Kurian, J. ; Dürrschnabel, Michael ; Nierman, G. ; Niu, G. ; Calka, P. ; Lehmann, M. ; Kleebe, Hans-Joachim ; Wenger, C. ; Schroeder, T. ; Alff, Lambert (2017):
Control of switching modes and conductance quantization via oxygen engineering in HfOx based memristive devices.
In: Advanced Functional Materirials, 27, p. 1700432. Wiley-VCH Verlag GmbH, Weinheim, DOI: 10.1002/adfm.201700432,
[Article]

Niu, G. ; Schubert, M. A. ; Sharath, S. U. ; Zaumseil, P. ; Vogel, S. ; Wenger, C. ; Hildebrandt, E. ; Bhupathi, S. ; Perez, E. ; Alff, L. ; Lehmann, M. ; Schroeder, T. ; Niermann, T. (2017):
Electron holography on HfO2/HfO2−x bilayer structures with multilevel resistive switching properties.
In: Nanotechnology, 28 (21), p. 215702. IOP Science Publishing, ISSN 0957-4484,
[Article]

Niu, G. ; Schubert, M. A. ; Sharath, S. U. ; Zaumseil, P. ; Vogel, S. ; Wenger, C. ; Hildebrandt, E. ; Bhupathi, S. ; Perez, E. ; Alff, L. ; Lehmann, M. ; Schroeder, T. ; Niermann, T. (2017):
Electron holography on HfO2/HfO2−xbilayer structures with multilevel resistive switching properties.
In: Nanotechnology, 28 (21), p. 215702. IOP Publishing, ISSN 0957-4484,
DOI: 10.1088/1361-6528/aa6cd9,
[Article]

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