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Number of items: 4.

Petzold, S. and Piros, E. and Sharath, S. U. and Zintler, Alexander and Hildebrandt, Erwin and Molina-Luna, Leopoldo and Wenger, C. and Alff, Lambert (2019):
Gradual Reset and Set Characteristics in Yttrium Oxide based Resistive Random Access Memory.
In: Semiconductor Science and Technology, ISSN 0268-1242,
DOI: 10.1088/1361-6641/ab220f,
[Online-Edition: https://iopscience.iop.org/article/10.1088/1361-6641/ab220f],
[Article]

Sharath, S. U. and Vogel, S. and Molina-Luna, Leopoldo and Hildebrandt, Erwin and Kurian, J. and Duerrschnabel, Michael and Nierman, G. and Niu, G. and Calka, P. and Lehmann, M. and Kleebe, Hans-Joachim and Wenger, C. and Schroeder, T. and Alff, Lambert (2017):
Control of switching modes and conductance quantization via oxygen engineering in HfOx based memristive devices.
In: Advanced Functional Materirials, Wiley-VCH Verlag GmbH, Weinheim, p. 1700432, 27, DOI: 10.1002/adfm.201700432,
[Article]

Niu, G. and Schubert, M. A. and Sharath, S. U. and Zaumseil, P. and Vogel, S. and Wenger, C. and Hildebrandt, E. and Bhupathi, S. and Perez, E. and Alff, L. and Lehmann, M. and Schroeder, T. and Niermann, T. (2017):
Electron holography on HfO2/HfO2−x bilayer structures with multilevel resistive switching properties.
In: Nanotechnology, IOP Science Publishing, p. 215702, 28, (21), ISSN 0957-4484,
[Online-Edition: http://doi.org/10.1088/1361-6528/aa6cd9],
[Article]

Niu, G. and Schubert, M. A. and Sharath, S. U. and Zaumseil, P. and Vogel, S. and Wenger, C. and Hildebrandt, E. and Bhupathi, S. and Perez, E. and Alff, L. and Lehmann, M. and Schroeder, T. and Niermann, T. (2017):
Electron holography on HfO2/HfO2−xbilayer structures with multilevel resistive switching properties.
In: Nanotechnology, IOP Publishing, p. 215702, 28, (21), ISSN 0957-4484,
DOI: 10.1088/1361-6528/aa6cd9,
[Online-Edition: https://doi.org/10.1088/1361-6528/aa6cd9],
[Article]

This list was generated on Tue Jun 18 02:01:32 2019 CEST.