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Number of items: 15.

Petzold, S. ; Zintler, Alexander ; Eilhardt, Robert ; Piros, E. ; Kaiser, N. ; Sharath, S. U. ; Vogel, T. ; Major, M. ; McKenna, K. P. ; Molina-Luna, Leopoldo ; Alff, Lambert (2019):
Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices.
In: Advanced Electronic Materials, 25 (S2), pp. 1842-1843. WILEY, ISSN 2199160X,
DOI: 0.1017/S1431927619009942,
[Article]

Petzold, S. ; Piros, E. ; Sharath, S. U. ; Zintler, Alexander ; Hildebrandt, Erwin ; Molina-Luna, Leopoldo ; Wenger, C. ; Alff, Lambert (2019):
Gradual Reset and Set Characteristics in Yttrium Oxide based Resistive Random Access Memory.
In: Semiconductor Science and Technology, ISSN 0268-1242,
DOI: 10.1088/1361-6641/ab220f,
[Article]

Zintler, Alexander ; Kunz, Ulrike ; Pivak, Y. ; Sharath, S. U. ; Vogel, S. ; Kleebe, Hans-Joachim ; Alff, Lambert ; Molina-Luna, Leopoldo (2017):
FIB Based Fabrication of an Operative Pt/HfO2/TiN Device for Resistive Switching inside a Transmission Electron Microscope.
In: Ultramicroscopy, 181, pp. 144-149. Elsevier Science Publishing, ISSN 0304-3991,
DOI: 10.1016/j.ultramic.2017.04.008,
[Article]

Zintler, A. ; Kunz, U. ; Pivak, Y. ; Sharath, S. U. ; Vogel, S. ; Hildebrandt, E. ; Kleebe, H.-J. ; Alff, L. ; Molina-Luna, L. (2017):
FIB based fabrication of an operative Pt/HfO 2 /TiN device for resistive switching inside a transmission electron microscope.
In: Ultramicroscopy, 181, pp. 144-149. Elsevier Science Publishing, ISSN 03043991,
DOI: 10.1016/j.ultramic.2017.04.008,
[Article]

Sharath, S. U. ; Vogel, S. ; Molina-Luna, Leopoldo ; Hildebrandt, Erwin ; Kurian, J. ; Dürrschnabel, Michael ; Nierman, G. ; Niu, G. ; Calka, P. ; Lehmann, M. ; Kleebe, Hans-Joachim ; Wenger, C. ; Schroeder, T. ; Alff, Lambert (2017):
Control of switching modes and conductance quantization via oxygen engineering in HfOx based memristive devices.
In: Advanced Functional Materirials, 27, p. 1700432. Wiley-VCH Verlag GmbH, Weinheim, DOI: 10.1002/adfm.201700432,
[Article]

Sharma, S. ; Hildebrandt, E. ; Sharath, S. U. ; Radulov, I. ; Alff, L. (2017):
YCo 5 ± x thin films with perpendicular anisotropy grown by molecular beam epitaxy.
In: Journal of Magnetism and Magnetic Materials, 432, pp. 382-386. Elsevier Science Publishing, ISSN 03048853,
[Article]

Sharma, S. ; Hildebrandt, E. ; Sharath, S. U. ; Radulov, I. ; Alff, L. (2017):
YCo5±xthin films with perpendicular anisotropy grown by molecular beam epitaxy.
In: Journal of Magnetism and Magnetic Materials, 432, pp. 382-386. Elsevier Science Publishing, ISSN 03048853,
DOI: 10.1016/j.jmmm.2017.02.020,
[Article]

Niu, G. ; Schubert, M. A. ; Sharath, S. U. ; Zaumseil, P. ; Vogel, S. ; Wenger, C. ; Hildebrandt, E. ; Bhupathi, S. ; Perez, E. ; Alff, L. ; Lehmann, M. ; Schroeder, T. ; Niermann, T. (2017):
Electron holography on HfO2/HfO2−x bilayer structures with multilevel resistive switching properties.
In: Nanotechnology, 28 (21), p. 215702. IOP Science Publishing, ISSN 0957-4484,
[Article]

Niu, G. ; Schubert, M. A. ; Sharath, S. U. ; Zaumseil, P. ; Vogel, S. ; Wenger, C. ; Hildebrandt, E. ; Bhupathi, S. ; Perez, E. ; Alff, L. ; Lehmann, M. ; Schroeder, T. ; Niermann, T. (2017):
Electron holography on HfO2/HfO2−xbilayer structures with multilevel resistive switching properties.
In: Nanotechnology, 28 (21), p. 215702. IOP Publishing, ISSN 0957-4484,
DOI: 10.1088/1361-6528/aa6cd9,
[Article]

Rodenbücher, C. ; Hildebrandt, E. ; Szot, K. ; Sharath, S. U. ; Kurian, J. ; Komissinskiy, P. ; Breuer, U. ; Waser, R. ; Alff, L. (2016):
Hafnium carbide formation in oxygen deficient hafnium oxide thin films.
In: Applied Physics Letters, 108 (25), p. 252903. AIP Publishing, ISSN 0003-6951,
[Article]

Sharath, S. U. ; Joseph, M. J. ; Vogel, S. ; Hildebrandt, E. ; Komissinskiy, P. ; Kurian, J. ; Schroeder, T. ; Alff, L. (2016):
Impact of oxygen stoichiometry on electroforming and multiple switching modes in TiN/TaOx/Pt based ReRAM.
In: Applied Physics Letters, 109 (17), p. 173503. AIP Publishing, ISSN 0003-6951,
[Article]

Bick, D. S. ; Sharath, S. U. ; Hoffman, I. ; Major, M. ; Kurian, J. ; Alff, L. (2015):
(001) and (111) Single-Oriented Highly Epitaxial CeO2 Thin Films on r-Cut Sapphire Substrates.
In: Journal of Electronic Materials, 44 (8), pp. 2930-2938. Springer Berlin Heidelberg, ISSN 0361-5235,
[Article]

Hildebrandt, Erwin ; Yazdi, Mehrdad Baghaie ; Kurian, Jose ; Sharath, S. U. ; Wilhelm, Fabrice ; Rogalev, Andrei ; Alff, Lambert (2014):
Intrinsic versus extrinsic ferromagnetism in HfO2−x and Ni:HfO2−x thin films.
In: Physical Review B, 90 (13), p. 134426. APS Publications, ISSN 1098-0121,
[Article]

Sharath, S. U. ; Bertaud, T. ; Kurian, J. ; Hildebrandt, E. ; Walczyk, C. ; Calka, P. ; Zaumseil, P. ; Sowinska, M. ; Walczyk, D. ; Gloskovskii, A. ; Schroeder, T. ; Alff, L. (2014):
Towards forming-free resistive switching in oxygen engineered HfO2−x.
In: Applied Physics Letters, 104 (6), pp. 063502. AIP Publishing LLC, ISSN 0003-6951,
[Article]

Sharath, S. U. ; Kurian, J. ; Komissinskiy, P. ; Hildebrandt, E. ; Bertaud, T. ; Walczyk, C. ; Calka, P. ; Schroeder, T. ; Alff, L. (2014):
Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories.
In: Applied Physics Letters, 105 (7), pp. 073505. AIP Publishing LLC, ISSN 0003-6951,
[Article]

This list was generated on Sat Oct 16 07:28:01 2021 CEST.