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Number of items: 15.

Petzold, S. and Zintler, Alexander and Eilhardt, Robert and Piros, E. and Kaiser, N. and Sharath, S. U. and Vogel, T. and Major, M. and McKenna, K. P. and Molina-Luna, Leopoldo and Alff, Lambert (2019):
Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices.
In: Advanced Electronic Materials, WILEY, pp. 1842-1843, 25, (S2), ISSN 2199160X,
DOI: 0.1017/S1431927619009942,
[Article]

Petzold, S. and Piros, E. and Sharath, S. U. and Zintler, Alexander and Hildebrandt, Erwin and Molina-Luna, Leopoldo and Wenger, C. and Alff, Lambert (2019):
Gradual Reset and Set Characteristics in Yttrium Oxide based Resistive Random Access Memory.
In: Semiconductor Science and Technology, ISSN 0268-1242,
DOI: 10.1088/1361-6641/ab220f,
[Online-Edition: https://iopscience.iop.org/article/10.1088/1361-6641/ab220f],
[Article]

Zintler, Alexander and Kunz, Ulrike and Pivak, Y. and Sharath, S. U. and Vogel, S. and Kleebe, Hans-Joachim and Alff, Lambert and Molina-Luna, Leopoldo (2017):
FIB Based Fabrication of an Operative Pt/HfO2/TiN Device for Resistive Switching inside a Transmission Electron Microscope.
In: Ultramicroscopy, Elsevier Science Publishing, pp. 144-149, 181, ISSN 03043991,
DOI: 10.1016/j.ultramic.2017.04.008,
[Article]

Zintler, A. and Kunz, U. and Pivak, Y. and Sharath, S. U. and Vogel, S. and Hildebrandt, E. and Kleebe, H.-J. and Alff, L. and Molina-Luna, L. (2017):
FIB based fabrication of an operative Pt/HfO 2 /TiN device for resistive switching inside a transmission electron microscope.
In: Ultramicroscopy, Elsevier Science Publishing, pp. 144-149, 181, ISSN 03043991,
DOI: 10.1016/j.ultramic.2017.04.008,
[Online-Edition: https://doi.org/10.1016/j.ultramic.2017.04.008],
[Article]

Sharath, S. U. and Vogel, S. and Molina-Luna, Leopoldo and Hildebrandt, Erwin and Kurian, J. and Duerrschnabel, Michael and Nierman, G. and Niu, G. and Calka, P. and Lehmann, M. and Kleebe, Hans-Joachim and Wenger, C. and Schroeder, T. and Alff, Lambert (2017):
Control of switching modes and conductance quantization via oxygen engineering in HfOx based memristive devices.
In: Advanced Functional Materirials, Wiley-VCH Verlag GmbH, Weinheim, p. 1700432, 27, DOI: 10.1002/adfm.201700432,
[Article]

Sharma, S. and Hildebrandt, E. and Sharath, S. U. and Radulov, I. and Alff, L. (2017):
YCo 5 ± x thin films with perpendicular anisotropy grown by molecular beam epitaxy.
In: Journal of Magnetism and Magnetic Materials, Elsevier Science Publishing, pp. 382-386, 432, ISSN 03048853,
[Online-Edition: http://doi.org/10.1016/j.jmmm.2017.02.020],
[Article]

Sharma, S. and Hildebrandt, E. and Sharath, S. U. and Radulov, I. and Alff, L. (2017):
YCo5±xthin films with perpendicular anisotropy grown by molecular beam epitaxy.
In: Journal of Magnetism and Magnetic Materials, Elsevier Science Publishing, pp. 382-386, 432, ISSN 03048853,
DOI: 10.1016/j.jmmm.2017.02.020,
[Online-Edition: https://doi.org/10.1016/j.jmmm.2017.02.020],
[Article]

Niu, G. and Schubert, M. A. and Sharath, S. U. and Zaumseil, P. and Vogel, S. and Wenger, C. and Hildebrandt, E. and Bhupathi, S. and Perez, E. and Alff, L. and Lehmann, M. and Schroeder, T. and Niermann, T. (2017):
Electron holography on HfO2/HfO2−x bilayer structures with multilevel resistive switching properties.
In: Nanotechnology, IOP Science Publishing, p. 215702, 28, (21), ISSN 0957-4484,
[Online-Edition: http://doi.org/10.1088/1361-6528/aa6cd9],
[Article]

Niu, G. and Schubert, M. A. and Sharath, S. U. and Zaumseil, P. and Vogel, S. and Wenger, C. and Hildebrandt, E. and Bhupathi, S. and Perez, E. and Alff, L. and Lehmann, M. and Schroeder, T. and Niermann, T. (2017):
Electron holography on HfO2/HfO2−xbilayer structures with multilevel resistive switching properties.
In: Nanotechnology, IOP Publishing, p. 215702, 28, (21), ISSN 0957-4484,
DOI: 10.1088/1361-6528/aa6cd9,
[Online-Edition: https://doi.org/10.1088/1361-6528/aa6cd9],
[Article]

Rodenbücher, C. and Hildebrandt, E. and Szot, K. and Sharath, S. U. and Kurian, J. and Komissinskiy, P. and Breuer, U. and Waser, R. and Alff, L. (2016):
Hafnium carbide formation in oxygen deficient hafnium oxide thin films.
In: Applied Physics Letters, AIP Publishing, p. 252903, 108, (25), ISSN 0003-6951,
[Online-Edition: http://doi.org/10.1063/1.4954714],
[Article]

Sharath, S. U. and Joseph, M. J. and Vogel, S. and Hildebrandt, E. and Komissinskiy, P. and Kurian, J. and Schroeder, T. and Alff, L. (2016):
Impact of oxygen stoichiometry on electroforming and multiple switching modes in TiN/TaOx/Pt based ReRAM.
In: Applied Physics Letters, AIP Publishing, p. 173503, 109, (17), ISSN 0003-6951,
[Online-Edition: http://doi.org/10.1063/1.4965872],
[Article]

Bick, D. S. and Sharath, S. U. and Hoffman, I. and Major, M. and Kurian, J. and Alff, L. (2015):
(001) and (111) Single-Oriented Highly Epitaxial CeO2 Thin Films on r-Cut Sapphire Substrates.
In: Journal of Electronic Materials, Springer Berlin Heidelberg, pp. 2930-2938, 44, (8), ISSN 0361-5235,
[Online-Edition: http://dx.doi.org/10.1007/s11664-015-3728-2],
[Article]

Hildebrandt, Erwin and Yazdi, Mehrdad Baghaie and Kurian, Jose and Sharath, S. U. and Wilhelm, Fabrice and Rogalev, Andrei and Alff, Lambert (2014):
Intrinsic versus extrinsic ferromagnetism in HfO2−x and Ni:HfO2−x thin films.
In: Physical Review B, APS Publications, p. 134426, 90, (13), ISSN 1098-0121,
[Online-Edition: http://dx.doi.org/10.1103/PhysRevB.90.134426],
[Article]

Sharath, S. U. and Bertaud, T. and Kurian, J. and Hildebrandt, E. and Walczyk, C. and Calka, P. and Zaumseil, P. and Sowinska, M. and Walczyk, D. and Gloskovskii, A. and Schroeder, T. and Alff, L. (2014):
Towards forming-free resistive switching in oxygen engineered HfO2−x.
In: Applied Physics Letters, AIP Publishing LLC, pp. 063502, 104, (6), ISSN 0003-6951,
[Online-Edition: http://dx.doi.org/10.1063/1.4864653],
[Article]

Sharath, S. U. and Kurian, J. and Komissinskiy, P. and Hildebrandt, E. and Bertaud, T. and Walczyk, C. and Calka, P. and Schroeder, T. and Alff, L. (2014):
Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories.
In: Applied Physics Letters, AIP Publishing LLC, pp. 073505, 105, (7), ISSN 0003-6951,
[Online-Edition: http://dx.doi.org/10.1063/1.4893605],
[Article]

This list was generated on Tue Oct 15 01:49:39 2019 CEST.