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FIB based fabrication of an operative Pt/HfO 2 /TiN device for resistive switching inside a transmission electron microscope

Zintler, A. and Kunz, U. and Pivak, Y. and Sharath, S. U. and Vogel, S. and Hildebrandt, E. and Kleebe, H.-J. and Alff, L. and Molina-Luna, L. (2017):
FIB based fabrication of an operative Pt/HfO 2 /TiN device for resistive switching inside a transmission electron microscope.
In: Ultramicroscopy, Elsevier Science Publishing, pp. 144-149, 181, ISSN 03043991, DOI: 10.1016/j.ultramic.2017.04.008, [Online-Edition: https://doi.org/10.1016/j.ultramic.2017.04.008],
[Article]

Abstract

Recent advances in microelectromechanical systems (MEMS) based chips for in situ transmission electron microscopy are opening exciting new avenues in nanoscale research. The capability to perform current-voltage measurements while simultaneously analyzing the corresponding structural, chemical or even electronic structure changes during device operation would be a major breakthrough in the field of nanoelectronics. In this work we demonstrate for the first time how to electrically contact and operate a lamella cut from a resistive random access memory (RRAM) device based on a Pt/HfO2/TiN metal-insulator-metal (MIM) structure. The device was fabricated using a focused ion beam (FIB) instrument and an in situ lift-out system. The electrical switching characteristics of the electron-transparent lamella were comparable to a conventional reference device. The lamella structure was initially found to be in a low resistance state and could be reset progressively to higher resistance states by increasing the positive bias applied to the Pt anode. This could be followed up with unipolar set/reset operations where the current compliance during set was limited to 400 µA. FIB structures allowing to operate and at the same time characterize electronic devices will be an important tool to improve RRAM device performance based on a microstructural understanding of the switching mechanism.

Item Type: Article
Erschienen: 2017
Creators: Zintler, A. and Kunz, U. and Pivak, Y. and Sharath, S. U. and Vogel, S. and Hildebrandt, E. and Kleebe, H.-J. and Alff, L. and Molina-Luna, L.
Title: FIB based fabrication of an operative Pt/HfO 2 /TiN device for resistive switching inside a transmission electron microscope
Language: English
Abstract:

Recent advances in microelectromechanical systems (MEMS) based chips for in situ transmission electron microscopy are opening exciting new avenues in nanoscale research. The capability to perform current-voltage measurements while simultaneously analyzing the corresponding structural, chemical or even electronic structure changes during device operation would be a major breakthrough in the field of nanoelectronics. In this work we demonstrate for the first time how to electrically contact and operate a lamella cut from a resistive random access memory (RRAM) device based on a Pt/HfO2/TiN metal-insulator-metal (MIM) structure. The device was fabricated using a focused ion beam (FIB) instrument and an in situ lift-out system. The electrical switching characteristics of the electron-transparent lamella were comparable to a conventional reference device. The lamella structure was initially found to be in a low resistance state and could be reset progressively to higher resistance states by increasing the positive bias applied to the Pt anode. This could be followed up with unipolar set/reset operations where the current compliance during set was limited to 400 µA. FIB structures allowing to operate and at the same time characterize electronic devices will be an important tool to improve RRAM device performance based on a microstructural understanding of the switching mechanism.

Journal or Publication Title: Ultramicroscopy
Volume: 181
Publisher: Elsevier Science Publishing
Uncontrolled Keywords: In situ TEM biasing, Resistive switching device, Metal-insulator-metal structure, Focused ion beam, Electrical characterization, Specimen preparation, Operando
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Earth Science
11 Department of Materials and Earth Sciences > Earth Science > Geo-Material-Science
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
11 Department of Materials and Earth Sciences > Material Science > Physical Metallurgy
Date Deposited: 11 Dec 2017 11:49
DOI: 10.1016/j.ultramic.2017.04.008
Official URL: https://doi.org/10.1016/j.ultramic.2017.04.008
Funders: Both the focused ion beam instrument and the transmission electron microscope employed for this work were partially funded by the German Research Foundation (DFG/INST163/2951)., The authors thank Mrs. B. Thybusch for assistance in the FIB preparation process., Electrical characterization was supported by the German Research Foundation (DFG/AL560/13-2), the Federal Ministry of Education and Research (BMBF) under contract 16ES0250 and by ENIAC JU within the project PANACHE.
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