TU Darmstadt / ULB / TUbiblio

Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories

Sharath, S. U. and Kurian, J. and Komissinskiy, P. and Hildebrandt, E. and Bertaud, T. and Walczyk, C. and Calka, P. and Schroeder, T. and Alff, L. (2014):
Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories.
In: Applied Physics Letters, AIP Publishing LLC, pp. 073505, 105, (7), ISSN 0003-6951,
[Online-Edition: http://dx.doi.org/10.1063/1.4893605],
[Article]

Abstract

The conducting filament forming voltage of stoichiometric hafnium oxide based resistive switching layers increases linearly with layer thickness. Using strongly reduced oxygen deficient hafnium oxide thin films grown on polycrystalline TiN/Si(001) substrates, the thickness dependence of the forming voltage is strongly suppressed. Instead, an almost constant forming voltage of about 3 V is observed up to 200 nm layer thickness. This effect suggests that filament formation and switching occurs for all samples in an oxidized HfO2 surface layer of a few nanometer thickness while the highly oxygen deficient thin film itself merely serves as a oxygen vacancy reservoir.

Item Type: Article
Erschienen: 2014
Creators: Sharath, S. U. and Kurian, J. and Komissinskiy, P. and Hildebrandt, E. and Bertaud, T. and Walczyk, C. and Calka, P. and Schroeder, T. and Alff, L.
Title: Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories
Language: English
Abstract:

The conducting filament forming voltage of stoichiometric hafnium oxide based resistive switching layers increases linearly with layer thickness. Using strongly reduced oxygen deficient hafnium oxide thin films grown on polycrystalline TiN/Si(001) substrates, the thickness dependence of the forming voltage is strongly suppressed. Instead, an almost constant forming voltage of about 3 V is observed up to 200 nm layer thickness. This effect suggests that filament formation and switching occurs for all samples in an oxidized HfO2 surface layer of a few nanometer thickness while the highly oxygen deficient thin film itself merely serves as a oxygen vacancy reservoir.

Journal or Publication Title: Applied Physics Letters
Volume: 105
Number: 7
Publisher: AIP Publishing LLC
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 17 Nov 2014 13:23
Official URL: http://dx.doi.org/10.1063/1.4893605
Identification Number: doi:10.1063/1.4893605
Funders: IHP and TU Darmstadt authors are grateful for financial support by the Deutsche Forschungsgemeinschaft (DFG) under Project No. SCHR1123/7-1., Funding by the Federal Ministry of Education and Research (BMBF) under Contracts 05KS7UM1, 05K10UMA, 05KS7WW3, 16ES0250, and 05K10WW1 is also gratefully acknowledged., We thank funding by ENIAC JU within the project PANACHE., P. Calka is grateful to AvH foundation for granting an AvH PostDoc fellowship.
Export:

Optionen (nur für Redakteure)

View Item View Item