Sharath, S. U. ; Kurian, J. ; Komissinskiy, P. ; Hildebrandt, E. ; Bertaud, T. ; Walczyk, C. ; Calka, P. ; Schroeder, T. ; Alff, L. (2014)
Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories.
In: Applied Physics Letters, 105 (7)
doi: 10.1063/1.4893605
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The conducting filament forming voltage of stoichiometric hafnium oxide based resistive switching layers increases linearly with layer thickness. Using strongly reduced oxygen deficient hafnium oxide thin films grown on polycrystalline TiN/Si(001) substrates, the thickness dependence of the forming voltage is strongly suppressed. Instead, an almost constant forming voltage of about 3 V is observed up to 200 nm layer thickness. This effect suggests that filament formation and switching occurs for all samples in an oxidized HfO2 surface layer of a few nanometer thickness while the highly oxygen deficient thin film itself merely serves as a oxygen vacancy reservoir.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2014 |
| Autor(en): | Sharath, S. U. ; Kurian, J. ; Komissinskiy, P. ; Hildebrandt, E. ; Bertaud, T. ; Walczyk, C. ; Calka, P. ; Schroeder, T. ; Alff, L. |
| Art des Eintrags: | Bibliographie |
| Titel: | Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories |
| Sprache: | Englisch |
| Publikationsjahr: | 2014 |
| Verlag: | AIP Publishing LLC |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Applied Physics Letters |
| Jahrgang/Volume einer Zeitschrift: | 105 |
| (Heft-)Nummer: | 7 |
| DOI: | 10.1063/1.4893605 |
| Kurzbeschreibung (Abstract): | The conducting filament forming voltage of stoichiometric hafnium oxide based resistive switching layers increases linearly with layer thickness. Using strongly reduced oxygen deficient hafnium oxide thin films grown on polycrystalline TiN/Si(001) substrates, the thickness dependence of the forming voltage is strongly suppressed. Instead, an almost constant forming voltage of about 3 V is observed up to 200 nm layer thickness. This effect suggests that filament formation and switching occurs for all samples in an oxidized HfO2 surface layer of a few nanometer thickness while the highly oxygen deficient thin film itself merely serves as a oxygen vacancy reservoir. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Dünne Schichten 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 17 Nov 2014 13:23 |
| Letzte Änderung: | 17 Nov 2014 13:23 |
| PPN: | |
| Sponsoren: | IHP and TU Darmstadt authors are grateful for financial support by the Deutsche Forschungsgemeinschaft (DFG) under Project No. SCHR1123/7-1., Funding by the Federal Ministry of Education and Research (BMBF) under Contracts 05KS7UM1, 05K10UMA, 05KS7WW3, 16ES0250, and 05K10WW1 is also gratefully acknowledged., We thank funding by ENIAC JU within the project PANACHE., P. Calka is grateful to AvH foundation for granting an AvH PostDoc fellowship. |
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