TU Darmstadt / ULB / TUbiblio

Electron holography on HfO2/HfO2−xbilayer structures with multilevel resistive switching properties

Niu, G. and Schubert, M. A. and Sharath, S. U. and Zaumseil, P. and Vogel, S. and Wenger, C. and Hildebrandt, E. and Bhupathi, S. and Perez, E. and Alff, L. and Lehmann, M. and Schroeder, T. and Niermann, T. (2017):
Electron holography on HfO2/HfO2−xbilayer structures with multilevel resistive switching properties.
In: Nanotechnology, IOP Publishing, p. 215702, 28, (21), ISSN 0957-4484, DOI: 10.1088/1361-6528/aa6cd9, [Online-Edition: https://doi.org/10.1088/1361-6528/aa6cd9],
[Article]

Abstract

Unveiling the physical nature of the oxygen-deficient conductive filaments (CFs) that are responsible for the resistive switching of the HfO2-based resistive random access memory (RRAM) devices represents a challenging task due to the oxygen vacancy related defect nature and nanometer size of the CFs. As a first important step to this goal, we demonstrate in this work direct visualization and a study of physico–chemical properties of oxygen-deficient amorphous HfO2−x by carrying out transmission electron microscopy electron holography as well as energy dispersive x-ray spectroscopy on HfO2/HfO2−x bilayer heterostructures, which are realized by reactive molecular beam epitaxy. Furthermore, compared to single layer devices, Pt/HfO2/HfO2−x /TiN bilayer devices show enhanced resistive switching characteristics with multilevel behavior, indicating their potential as electronic synapses in future neuromorphic computing applications.

Item Type: Article
Erschienen: 2017
Creators: Niu, G. and Schubert, M. A. and Sharath, S. U. and Zaumseil, P. and Vogel, S. and Wenger, C. and Hildebrandt, E. and Bhupathi, S. and Perez, E. and Alff, L. and Lehmann, M. and Schroeder, T. and Niermann, T.
Title: Electron holography on HfO2/HfO2−xbilayer structures with multilevel resistive switching properties
Language: English
Abstract:

Unveiling the physical nature of the oxygen-deficient conductive filaments (CFs) that are responsible for the resistive switching of the HfO2-based resistive random access memory (RRAM) devices represents a challenging task due to the oxygen vacancy related defect nature and nanometer size of the CFs. As a first important step to this goal, we demonstrate in this work direct visualization and a study of physico–chemical properties of oxygen-deficient amorphous HfO2−x by carrying out transmission electron microscopy electron holography as well as energy dispersive x-ray spectroscopy on HfO2/HfO2−x bilayer heterostructures, which are realized by reactive molecular beam epitaxy. Furthermore, compared to single layer devices, Pt/HfO2/HfO2−x /TiN bilayer devices show enhanced resistive switching characteristics with multilevel behavior, indicating their potential as electronic synapses in future neuromorphic computing applications.

Journal or Publication Title: Nanotechnology
Volume: 28
Number: 21
Publisher: IOP Publishing
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
Date Deposited: 11 Dec 2017 11:44
DOI: 10.1088/1361-6528/aa6cd9
Official URL: https://doi.org/10.1088/1361-6528/aa6cd9
Export:

Optionen (nur für Redakteure)

View Item View Item