Petzold, Stefan ; Sharath, S. U. ; Lemke, Jonas ; Hildebrandt, Erwin ; Trautmann, Christina ; Alff, Lambert (2019)
Heavy ion radiation effects on hafnium oxide-based resistive random access memory.
In: IEEE Transactions on Nuclear Science, 66 (7)
doi: 10.1109/TNS.2019.2908637
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Hafnium oxide-based resistive random access memory (RRAM) (TiN/HfO2-x/Pt/Au) stacks were irradiated with 1.1-GeV Au ions with fluences between 10(10) and 10(12) ions/cm(2) and evaluated regarding pristine resistance, forming voltage, and data retention. Only for the highest fluence, the resistance of the pristine state and, in turn, the conducting filament electroforming, as well as the reset voltage, increased. Even for fluences as high as 10(12) ions/cm(2), only a negligible percentage of the tested devices shows event upsets indicating extremely high data retention of hafnium oxide-based RRAM toward high-energy ionizing radiation.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2019 |
| Autor(en): | Petzold, Stefan ; Sharath, S. U. ; Lemke, Jonas ; Hildebrandt, Erwin ; Trautmann, Christina ; Alff, Lambert |
| Art des Eintrags: | Bibliographie |
| Titel: | Heavy ion radiation effects on hafnium oxide-based resistive random access memory |
| Sprache: | Englisch |
| Publikationsjahr: | Juli 2019 |
| Verlag: | IEEE |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | IEEE Transactions on Nuclear Science |
| Jahrgang/Volume einer Zeitschrift: | 66 |
| (Heft-)Nummer: | 7 |
| DOI: | 10.1109/TNS.2019.2908637 |
| Kurzbeschreibung (Abstract): | Hafnium oxide-based resistive random access memory (RRAM) (TiN/HfO2-x/Pt/Au) stacks were irradiated with 1.1-GeV Au ions with fluences between 10(10) and 10(12) ions/cm(2) and evaluated regarding pristine resistance, forming voltage, and data retention. Only for the highest fluence, the resistance of the pristine state and, in turn, the conducting filament electroforming, as well as the reset voltage, increased. Even for fluences as high as 10(12) ions/cm(2), only a negligible percentage of the tested devices shows event upsets indicating extremely high data retention of hafnium oxide-based RRAM toward high-energy ionizing radiation. |
| Freie Schlagworte: | data retention, hafnium oxide, heavy ions, HfO, irradiation, MIM, devices, nonvolatile memory (NVM), radiation effects basic mechanisms, resistive random access memory (RRAM), resistive switching, space radiation effects, total dose effects |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Dünne Schichten 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Ionenstrahlmodifizierte Materialien |
| Hinterlegungsdatum: | 29 Feb 2024 08:38 |
| Letzte Änderung: | 29 Feb 2024 08:38 |
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