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Number of items: 4.

Petzold, S. and Zintler, Alexander and Eilhardt, Robert and Piros, E. and Kaiser, N. and Sharath, S. U. and Vogel, T. and Major, M. and McKenna, K. P. and Molina-Luna, Leopoldo and Alff, Lambert (2019):
Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices.
In: Advanced Electronic Materials, WILEY, pp. 1842-1843, 25, (S2), ISSN 2199160X,
DOI: 0.1017/S1431927619009942,
[Article]

Petzold, S. and Piros, E. and Sharath, S. U. and Zintler, Alexander and Hildebrandt, Erwin and Molina-Luna, Leopoldo and Wenger, C. and Alff, Lambert (2019):
Gradual Reset and Set Characteristics in Yttrium Oxide based Resistive Random Access Memory.
In: Semiconductor Science and Technology, ISSN 0268-1242,
DOI: 10.1088/1361-6641/ab220f,
[Online-Edition: https://iopscience.iop.org/article/10.1088/1361-6641/ab220f],
[Article]

Petzold, S. and Miranda, E. and Sharath, S.U. and Munos-Gorriz, J. and Vogel, T. and Piros, E. and Kaiser, N. and Eilhardt, Robert and Zintler, Alexander and Molina-Luna, Leopoldo and Sune, J. and Alff, Lambert (2019):
Analysis and simulation of the multiple resistive switching modes occurring in HfOx-based resistive random access memories using memdiodes.
In: Journal of Applied Physics, p. 234503, (125), ISSN 00218979,
DOI: 10.1063/1.5094864,
[Article]

Zintler, Alexander and Eilhardt, Robert and Petzold, S. and Kaiser, N. and Ulhas, S. and Alff, Lambert and Molina-Luna, Leopoldo (2019):
Correlation of Structural Modifications by Multiscale Phase Mapping in Filamentary Type HfO2-based RRAM: Towards a Component Specific in situ TEM Investigation.
In: Proceedings of Microscopy & Microanalysis, Microscopy Society of America, pp. 1842-1843, 25, (S2), DOI: 10.1017/S1431927619009942,
[Article]

This list was generated on Sat Sep 21 01:06:41 2019 CEST.