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In: Advanced Functional Materirials, 27
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Electron holography on HfO2/HfO2−x bilayer structures with multilevel resistive switching properties.
In: Nanotechnology, 28 (21)
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Electron holography on HfO2/HfO2−xbilayer structures with multilevel resistive switching properties.
In: Nanotechnology, 28 (21)
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Impact of oxygen stoichiometry on electroforming and multiple switching modes in TiN/TaOx/Pt based ReRAM.
In: Applied Physics Letters, 109 (17)
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Sharath, S. U. ; Bertaud, T. ; Kurian, J. ; Hildebrandt, E. ; Walczyk, C. ; Calka, P. ; Zaumseil, P. ; Sowinska, M. ; Walczyk, D. ; Gloskovskii, A. ; Schroeder, T. ; Alff, L. (2014)
Towards forming-free resistive switching in oxygen engineered HfO2−x.
In: Applied Physics Letters, 104 (6)
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Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories.
In: Applied Physics Letters, 105 (7)
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