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Number of items: 3.

Sharath, S. U. and Vogel, S. and Molina-Luna, Leopoldo and Hildebrandt, Erwin and Kurian, J. and Duerrschnabel, Michael and Nierman, G. and Niu, G. and Calka, P. and Lehmann, M. and Kleebe, Hans-Joachim and Wenger, C. and Schroeder, T. and Alff, Lambert (2017):
Control of switching modes and conductance quantization via oxygen engineering in HfOx based memristive devices.
In: Advanced Functional Materirials, 27Wiley-VCH Verlag GmbH, Weinheim, p. 1700432, DOI: 10.1002/adfm.201700432,

Sharath, S. U. and Bertaud, T. and Kurian, J. and Hildebrandt, E. and Walczyk, C. and Calka, P. and Zaumseil, P. and Sowinska, M. and Walczyk, D. and Gloskovskii, A. and Schroeder, T. and Alff, L. (2014):
Towards forming-free resistive switching in oxygen engineered HfO2−x.
In: Applied Physics Letters, 104 (6), AIP Publishing LLC, pp. 063502, ISSN 0003-6951,
[Online-Edition: http://dx.doi.org/10.1063/1.4864653],

Sharath, S. U. and Kurian, J. and Komissinskiy, P. and Hildebrandt, E. and Bertaud, T. and Walczyk, C. and Calka, P. and Schroeder, T. and Alff, L. (2014):
Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories.
In: Applied Physics Letters, 105 (7), AIP Publishing LLC, pp. 073505, ISSN 0003-6951,
[Online-Edition: http://dx.doi.org/10.1063/1.4893605],

This list was generated on Tue Jun 2 00:29:09 2020 CEST.