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(001) and (111) Single-Oriented Highly Epitaxial CeO2 Thin Films on r-Cut Sapphire Substrates

Bick, D. S. and Sharath, S. U. and Hoffman, I. and Major, M. and Kurian, J. and Alff, L. (2015):
(001) and (111) Single-Oriented Highly Epitaxial CeO2 Thin Films on r-Cut Sapphire Substrates.
In: Journal of Electronic Materials, Springer Berlin Heidelberg, pp. 2930-2938, 44, (8), ISSN 0361-5235, [Online-Edition: http://dx.doi.org/10.1007/s11664-015-3728-2],
[Article]

Abstract

We have studied the growth of CeO2 thin films by molecular beam epitaxy on r-cut sapphire substrates. The oxidation state of the substrate surface controls the growth direction of CeO2. Oxygen pre-annealed substrates favor (001) growth, while oxygen vacancies lead to a mixed (001) and (111) orientation. Combining pre- and post-annealing, it is possible to achieve single- oriented CeO2 in both growth directions. Furthermore, post-annealing results in a dramatic increase of crystallinity with a rocking curve width of the (002) reflection as small as 0.004°. We provide a consistent growth model involving oxygen vacancies at the substrate to thin film interface.

Item Type: Article
Erschienen: 2015
Creators: Bick, D. S. and Sharath, S. U. and Hoffman, I. and Major, M. and Kurian, J. and Alff, L.
Title: (001) and (111) Single-Oriented Highly Epitaxial CeO2 Thin Films on r-Cut Sapphire Substrates
Language: English
Abstract:

We have studied the growth of CeO2 thin films by molecular beam epitaxy on r-cut sapphire substrates. The oxidation state of the substrate surface controls the growth direction of CeO2. Oxygen pre-annealed substrates favor (001) growth, while oxygen vacancies lead to a mixed (001) and (111) orientation. Combining pre- and post-annealing, it is possible to achieve single- oriented CeO2 in both growth directions. Furthermore, post-annealing results in a dramatic increase of crystallinity with a rocking curve width of the (002) reflection as small as 0.004°. We provide a consistent growth model involving oxygen vacancies at the substrate to thin film interface.

Journal or Publication Title: Journal of Electronic Materials
Volume: 44
Number: 8
Publisher: Springer Berlin Heidelberg
Uncontrolled Keywords: CeO2, molecular beam epitaxy, thin film growth
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 02 Jul 2015 12:38
Official URL: http://dx.doi.org/10.1007/s11664-015-3728-2
Identification Number: doi:10.1007/s11664-015-3728-2
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