Bick, D. S. ; Sharath, S. U. ; Hoffman, I. ; Major, M. ; Kurian, J. ; Alff, L. (2015)
(001) and (111) Single-Oriented Highly Epitaxial CeO2 Thin Films on r-Cut Sapphire Substrates.
In: Journal of Electronic Materials, 44 (8)
doi: 10.1007/s11664-015-3728-2
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
We have studied the growth of CeO2 thin films by molecular beam epitaxy on r-cut sapphire substrates. The oxidation state of the substrate surface controls the growth direction of CeO2. Oxygen pre-annealed substrates favor (001) growth, while oxygen vacancies lead to a mixed (001) and (111) orientation. Combining pre- and post-annealing, it is possible to achieve single- oriented CeO2 in both growth directions. Furthermore, post-annealing results in a dramatic increase of crystallinity with a rocking curve width of the (002) reflection as small as 0.004°. We provide a consistent growth model involving oxygen vacancies at the substrate to thin film interface.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2015 |
| Autor(en): | Bick, D. S. ; Sharath, S. U. ; Hoffman, I. ; Major, M. ; Kurian, J. ; Alff, L. |
| Art des Eintrags: | Bibliographie |
| Titel: | (001) and (111) Single-Oriented Highly Epitaxial CeO2 Thin Films on r-Cut Sapphire Substrates |
| Sprache: | Englisch |
| Publikationsjahr: | August 2015 |
| Verlag: | Springer Berlin Heidelberg |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Electronic Materials |
| Jahrgang/Volume einer Zeitschrift: | 44 |
| (Heft-)Nummer: | 8 |
| DOI: | 10.1007/s11664-015-3728-2 |
| Kurzbeschreibung (Abstract): | We have studied the growth of CeO2 thin films by molecular beam epitaxy on r-cut sapphire substrates. The oxidation state of the substrate surface controls the growth direction of CeO2. Oxygen pre-annealed substrates favor (001) growth, while oxygen vacancies lead to a mixed (001) and (111) orientation. Combining pre- and post-annealing, it is possible to achieve single- oriented CeO2 in both growth directions. Furthermore, post-annealing results in a dramatic increase of crystallinity with a rocking curve width of the (002) reflection as small as 0.004°. We provide a consistent growth model involving oxygen vacancies at the substrate to thin film interface. |
| Freie Schlagworte: | CeO2, molecular beam epitaxy, thin film growth |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Dünne Schichten 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 02 Jul 2015 12:38 |
| Letzte Änderung: | 02 Jul 2015 12:38 |
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