Sharath, S. U. ; Vogel, S. ; Molina-Luna, Leopoldo ; Hildebrandt, Erwin ; Kurian, J. ; Dürrschnabel, Michael ; Nierman, G. ; Niu, G. ; Calka, P. ; Lehmann, M. ; Kleebe, Hans-Joachim ; Wenger, C. ; Schroeder, T. ; Alff, Lambert (2017)
Control of switching modes and conductance quantization via oxygen engineering in HfOx based memristive devices.
In: Advanced Functional Materirials, 27
doi: 10.1002/adfm.201700432
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Rodenbücher, C. ; Hildebrandt, E. ; Szot, K. ; Sharath, S. U. ; Kurian, J. ; Komissinskiy, P. ; Breuer, U. ; Waser, R. ; Alff, L. (2016)
Hafnium carbide formation in oxygen deficient hafnium oxide thin films.
In: Applied Physics Letters, 108 (25)
doi: 10.1063/1.4954714
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Sharath, S. U. ; Joseph, M. J. ; Vogel, S. ; Hildebrandt, E. ; Komissinskiy, P. ; Kurian, J. ; Schroeder, T. ; Alff, L. (2016)
Impact of oxygen stoichiometry on electroforming and multiple switching modes in TiN/TaOx/Pt based ReRAM.
In: Applied Physics Letters, 109 (17)
doi: 10.1063/1.4965872
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Bick, D. S. ; Sharath, S. U. ; Hoffman, I. ; Major, M. ; Kurian, J. ; Alff, L. (2015)
(001) and (111) Single-Oriented Highly Epitaxial CeO2 Thin Films on r-Cut Sapphire Substrates.
In: Journal of Electronic Materials, 44 (8)
doi: 10.1007/s11664-015-3728-2
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Sharath, S. U. ; Bertaud, T. ; Kurian, J. ; Hildebrandt, E. ; Walczyk, C. ; Calka, P. ; Zaumseil, P. ; Sowinska, M. ; Walczyk, D. ; Gloskovskii, A. ; Schroeder, T. ; Alff, L. (2014)
Towards forming-free resistive switching in oxygen engineered HfO2−x.
In: Applied Physics Letters, 104 (6)
doi: 10.1063/1.4864653
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Sharath, S. U. ; Kurian, J. ; Komissinskiy, P. ; Hildebrandt, E. ; Bertaud, T. ; Walczyk, C. ; Calka, P. ; Schroeder, T. ; Alff, L. (2014)
Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories.
In: Applied Physics Letters, 105 (7)
doi: 10.1063/1.4893605
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Hord, R. ; Pascua, G. ; Hofmann, K. ; Cordier, G. ; Kurian, J. ; Luetkens, H. ; Pomjakushin, V. ; Reehuis, M. ; Albert, Barbara ; Alff, L. (2013)
Oxygen stoichiometry of low-temperature synthesized metastableT′-La2CuO4.
In: Superconductor Science and Technology, 26 (10)
doi: 10.1088/0953-2048/26/10/105026
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Kurian, J. ; Buckow, A. ; Retzlaff, R. ; Alff, L. (2013)
Search for superconductivity in LaNiP2 (P=Bi, Sb) thin films grown by reactive molecular beam epitaxy.
In: Physica C: Superconductivity, 484
doi: 10.1016/j.physc.2012.03.003
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Buckow, A. ; Retzlaff, R. ; Kurian, J. ; Alff, L. (2013)
Growth of superconducting epitaxial LaNixBi2pnictide thin films with a Bi square net layer by reactive molecular beam epitaxy.
In: Superconductor Science and Technology, 26 (1)
doi: 10.1088/0953-2048/26/1/015014
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Buckow, A. ; Retzlaff, R. ; Kurian, J. ; Alff, L. (2012)
MBE growth of LaNiBiO1-x thin films.
In: Physics Procedia, 27
doi: 10.1016/j.phpro.2012.03.470
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Hord, R. ; Luetkens, H. ; Pascua, G. ; Buckow, A. ; Hofmann, K. ; Krockenberger, Y. ; Kurian, J. ; Maeter, H. ; Klauss, H.-H. ; Pomjakushin, V. ; Suter, A. ; Albert, Barbara ; Alff, L. (2010)
Enhanced two-dimensional behavior of metastable T^{′}-La_{2}CuO_{4}, the parent compound of electron-doped cuprate superconductors.
In: Physical Review B, 82 (18)
doi: 10.1103/PhysRevB.82.180508
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Hildebrandt, E. ; Kurian, J. ; Zimmermann, J. ; Fleissner, A. ; Seggern, H. von ; Alff, L. (2009)
Hafnium oxide thin films: Effect of growth parameters on oxygen and hafnium vacancies.
In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 27 (1)
doi: 10.1116/1.3043474
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Prabhakaran, K. ; Kurian, J. ; Kumar, K. N. P. ; Chabal, Y. J. (2008)
Formation of periodic nanostructure network through substrate-mediated assembly.
In: Applied Surface Science, 255 (5)
doi: 10.1016/j.apsusc.2008.06.205
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Krockenberger, Y. ; Kurian, J. ; Naito, M. ; Alff, L. (2008)
Epitaxial growth of Gd₂₋ₓCeₓCuO₄ thin films.
In: Journal of Physics: Conference Series, 108 (1)
doi: 10.1088/1742-6596/108/1/012041
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Krockenberger, Y. ; Kurian, J. ; Naitoh, M. ; Alff, L. (2008)
Epitaxial growth of Gd2-xCexCuO4 thin films.
In: Journal of Physics: Conference Series, 108
doi: 10.1088/1742-6596/108/1/012041
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