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Number of items: 29.

Sigmund, Jochen ; Saglam, M. ; Vogt, Alexander ; Hartnagel, H. L. ; Buschmann, V. ; Wieder, Thomas ; Fuess, H. (2001):
Microstructure analysis of ohmic contacts on MBE grown n-GaSb and investigation of submicron contacts.
227-228, In: Journal of Crystal Growth, pp. 625-629. Elsevier, ISSN 0022-0248,
DOI: 10.1016/S0022-0248(01)00785-0,
[Article]

Sigmund, Jochen ; Saglam, M. ; Vogt, Alexander ; Hartnagel, H. L. ; Buschmann, V. ; Wieder, Thomas ; Fuess, H. (2000):
Microstructure analysis of Ohmic contacts on MBE grown n-GaSb layers and investigation of submicron contacts.
In: MBE-XI: International Conference on Molecular Beam Epitaxy <11, 2000, Beijing, China>: Abstract Book.S. 275, [Conference or Workshop Item]

Ichizli, Victoria M. ; Vogt, Alexander ; Sigurdardottir, A. ; Tiginyanu, I. M. ; Hartnagel, H. L. (1999):
Tunneling spectroscopy of AlAs and InSb interfaces in InAs/AlSb heterostructures.
14, In: Semiconductor science and technology, (2), pp. 143-147. IOP Publishing Ltd., ISSN 02681242,
DOI: 10.1088/0268-1242/14/2/007,
[Article]

Facsko, S. ; Dekorsy, T. ; Trappe, C. ; Kurz, H. ; Vogt, Alexander ; Hartnagel, H. L. (1999):
Formation of ordered nanoscale semiconductor dots by ion sputtering.
285, In: American Association for Advance of Science, pp. 1551-1553. [Article]

Lin, Chih-I. ; Vogt, Alexander ; Saglam, M. ; Hartnagel, H. L. (1999):
GaAs-Schottkydioden mit InAs-Elektrode.
In: MBE: Molecular Beam Epitaxy Workshop <1999, Würzburg>; Proceedings, [Conference or Workshop Item]

Mutamba, Kabula ; Sigurdardottir, A. ; Vogt, Alexander ; Pfeiffer, J. ; Behner, U. ; Di Carlo, A. ; Hartnagel, H. L. (1999):
Micromachined pressure sensors with AlGaAs/GaAs- and InAs/AlSb/GaSb-resonant tunneling diodes.
In: Annual Device Research Conference <57, 1999, Santa Barbara, Calif.>: Digest, [Conference or Workshop Item]

Tiginyanu, I. ; Ursaki, V. V. ; Raptis, Y. S. ; Stergiou, V. ; Anatassakis, E. ; Hartnagel, H. L. ; Vogt, Alexander ; Prevot, B. ; Schwab, C. (1999):
Raman modes in porous GaP under hydrostatic pressure.
211, In: Physica status solidi, pp. 281-286. Wiley & Sons Ltd., [Article]

Miranda-Pantoja, J. M. ; Vogt, Alexander ; Schuessler, M. ; Shaalan, M. ; Matulionis, A. ; Sebastian, J. L. ; Hartnagel, H. L. (1998):
Microwave noise measurements on Al 0.3Ga 0.7As/GaAs channels grown by molecular beam epitaxy using As2 and As4.
In: Journal of semiconductor science and technology. 1998, H. 13, S. 833-836, [Article]

Vogt, Alexander ; Simon, A. ; Weber, ; Hartnagel, H. L. ; Schikora, J. ; Buschmann, V. ; Fuess, H. (1998):
Non-annealed Ohmic contacts to p-GaSb grown by molecular beam epitaxy.
In: EXMATEC´98: International Workshop on Expert Evaluation and Control Compound Semiconductor Materials and Technologies <1998, Cardiff>: Proceedings, [Conference or Workshop Item]

Vogt, Alexander ; Simon, A. ; Hartnagel, H. L. ; Schikora, J. ; Buschmann, V. ; Rodewald, M. ; Fuess, H. ; Fascko, S. ; Koerdt, C. ; Kurz, H. (1998):
Ohmic contact formation mechanics of the PdGeAu system on n-type GaSb grown by molecular beam epitaxy.
83, In: Journal of Applied Physics, (12), pp. 7715-7719. American Institute of Physics, ISSN 0021-8979,
[Article]

Vogt, Alexander ; Simon, A. ; Hartnagel, H. L. ; Schikora, J. ; Buschmann, V. ; Rodewald, M. ; Fuess, H. ; Fascko, S. ; Kurz, H. (1998):
Ohmsche Kontakte des Systems Pd/Ge/Au auf n-GaSb.
In: Jahrestagung Deutsche Gesellschaft für Kristallographie <6, 1998, Karlsruhe>: Tagungsbd., [Conference or Workshop Item]

Vogt, Alexander (1998):
Technologiebeiträge zur Herstellung von Heterostrukturbauelementen aus dem Halbleitersystem InAs-GaSb-AlSb.
Aachen, Shaker, TU Darmstadt, ISBN 3-8265-4523-0,
[Ph.D. Thesis]

Mutamba, Kabula ; Sigurdardottir, A. ; Vogt, Alexander ; Hartnagel, H. L. ; Li, E. H. (1998):
A comparative study of uniaxial pressure effects in intraband AlGaAs/GaAs and interband in As/AlSb/GaSb resonant tunneling diodes.
In: Applied physics letters. 72 (1998), H.13, S.1629-1631, [Article]

Shaalan, Mohamed ; Beilenhoff, K. ; Bozzi, M. ; Weinzierl, J. ; Conciauro, G. ; Vogt, Alexander ; Weber, J. ; Fischer, H. ; Kiesow, M. (1997):
A 300 GHz integrated quasioptical frequency multiplier.
In: International Conference on Infrared and Millimeter Waves <22, 1997, Wintergreen Resort, Virginia, USA>: Proceedings, [Conference or Workshop Item]

Mutamba, Kabula ; Pfeiffer, J. ; Peerlings, J. ; Riemenschneider, R. ; Vogt, Alexander ; Dehé, A. ; Brauch, M. ; Meister, B. ; Dragojevic, N. (1997):
ANSYS-structural design of micromachined Fabry-Pérot filter with planar membranes.
In: International Topical Meeting on Photoelectronics <1997, Beijing, China>: Proceedings, [Conference or Workshop Item]

Vogt, Alexander ; Brandt, ; Sigurdardottir, A. ; Schüßler, ; Pena, ; Simon, ; Hartnagel, H. L. ; Rodewald, ; Roesner, (1997):
Characterisation of degradation mechanisms in resonant tunneling diodes.
In: European Symposium of Electron Devices, Failure Physics and Analysis <8, 1997, Arcachon, France>: Proceedings. S. 1691-1694, [Conference or Workshop Item]

Vogt, Alexander ; Brandt, ; Sigurdardottir, A. ; Schüssler, ; Pena, ; Simon, ; Hartnagel, H. L. ; Rodewald, ; Roesner, (1997):
Characterisation of degradation mechanisms in resonant tunnelling diodes.
In: Microelectronics and reliability. 37 (1997), S. 1691-1694, [Article]

Shaalan, Mohamed ; Bozzi, M. ; Weinzierl, J. ; Miranda, J. ; Vogt, Alexander ; Weber, J. ; Hartnagel, H. L. ; Conciauro, G. (1997):
First design of a 430 GHz quasioptical HBV tripler.
In: International Workshop on Terahertz Electronics <5, 1997, Grenoble, France>: Proceedings, [Conference or Workshop Item]

Peerlings, Joachim ; Dehé, A. ; Vogt, Alexander ; Tilsch, M. ; Hebeler, C. ; Langenhan, F. ; Meißner, P. ; Hartnagel, H. L. (1997):
GaAs/AlAs micromachined tunable Fabry-Pérot filters with long resonant cavity.
In: Eurosensors <11, 1997, Warszawa, Poland>: Proceedings, [Conference or Workshop Item]

Sigurdardottir, Anna ; Mutamba, K. ; Vogt, Alexander ; Hartnagel, H. L. (1997):
Investigation on the tunneling effect in stressed InAs/AlSb/GaSb-resonant-tunneling diodes.
In: Workshop on Compound Semiconductor Devices and Integrated Circuits <21, 1997, Scheveningen, NL>: Proceedings, [Conference or Workshop Item]

Peerlings, Joachim ; Dehé, A. ; Vogt, Alexander ; Tilsch, M. ; Hebeler, C. ; Langenhan, F. ; Meißner, P. ; Hartnagel, H. L. (1997):
Long resonator micromachined tunable GaAs/AlAs Fabry-Pérot filter.
In: IEEE Photonics technology letters. 9 (1997), 9, S. 1235-1237, [Article]

Vogt, Alexander ; Simon, ; Hartnagel, ; Rodewald, ; Fuess, ; Ressel, ; Vogel, ; Würfl, (1997):
Pd-based Ohmic contacts to GaSb.
In: WOCSDICE'97 <1997, Scheveningen, NL>: Proceedings, [Conference or Workshop Item]

Tiginyanu, I. ; Irmer, G. ; Monecke, J. ; Vogt, Alexander ; Hartnagel, H. L. (1997):
Porosity-induced modification of the phonon spectrum of n-GaAs.
In: Semiconductor science technology. 12 (1997), S. 491-493, [Article]

Mutamba, Kabula ; Sigurdardottir, A. ; Vogt, Alexander ; Hartnagel, H. L. (1997):
Stress effects in AlGaAs/GaAs and InAs/AlSb/GaSb RTDs for sensing applications.
In: Phantoms Strategic Domain Meeting on Physics and Technology of Mesoscopic Systems <1997, Aachen, Germany>: Abstracts, [Conference or Workshop Item]

Vogt, Alexander ; Hartnagel, ; Miehe, ; Fuess, ; Schmitz, ; Hartnagel, ; Miehe, ; Fuess, ; Schmitz, (1996):
Electrical and microstructure analysis of ohmic contacts to p- and n-type GaSb, grown by molecular beam epitaxy.
In: Journal of vacuum science and technology. B 14 (1996), S. 3514-3519, [Article]

Mutamba, Kabula ; Flath, ; Sigurdardottir, A. ; Vogt, Alexander ; Hartnagel, H. L. (1996):
Pressure effects in AlGaAs/GaAs resonant tunnelling diodes for applications in semiconductor sensors.
In: Lithunian journal of physics. 36 (1996), No. 6, S. 563-565, [Article]

Mutamba, Kabula ; Flath, ; Vogt, Alexander ; Sigurdardottir, A. ; Dehé, A. ; Hartnagel, H. L. (1996):
Pressure sensors based on stress dependence of AlGaAs/GaAs RTD characteristics.
In: Workshop on Heterostructures Technology <1996, Lille>: Proceedings, [Conference or Workshop Item]

Vogt, Alexander ; Brandt, ; Pena, ; Aller, ; Hartnagel, (1996):
Wachstum und Zuverlässigkeit von resonanten Tunneldioden.
In: Molecular Beam Epitaxy Workshop <1996, Frankfurt/Oder>: Proceedings, [Conference or Workshop Item]

Shaalan, Mohamed ; Vogt, Alexander ; Weber, J. ; Steup, D. ; Eiermann, (1996):
A novel 300 GHz doubler. Part II: Chip fabrication and initial characterisation.
In: International Workshop on Terahertz Electronics <4, 1996, Erlangen>: Proceedings, [Conference or Workshop Item]

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