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A comparative study of uniaxial pressure effects in intraband AlGaAs/GaAs and interband in As/AlSb/GaSb resonant tunneling diodes

Mutamba, Kabula and Sigurdardottir, A. and Vogt, Alexander and Hartnagel, H. L. and Li, E. H. (1998):
A comparative study of uniaxial pressure effects in intraband AlGaAs/GaAs and interband in As/AlSb/GaSb resonant tunneling diodes.
In: Applied physics letters. 72 (1998), H.13, S.1629-1631, [Article]

Item Type: Article
Erschienen: 1998
Creators: Mutamba, Kabula and Sigurdardottir, A. and Vogt, Alexander and Hartnagel, H. L. and Li, E. H.
Title: A comparative study of uniaxial pressure effects in intraband AlGaAs/GaAs and interband in As/AlSb/GaSb resonant tunneling diodes
Language: English
Journal or Publication Title: Applied physics letters. 72 (1998), H.13, S.1629-1631
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
Date Deposited: 19 Nov 2008 16:04
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