TU Darmstadt / ULB / TUbiblio

Electrical and microstructure analysis of ohmic contacts to p- and n-type GaSb, grown by molecular beam epitaxy

Vogt, Alexander and Hartnagel, and Miehe, and Fuess, and Schmitz, and Hartnagel, and Miehe, and Fuess, and Schmitz, (1996):
Electrical and microstructure analysis of ohmic contacts to p- and n-type GaSb, grown by molecular beam epitaxy.
In: Journal of vacuum science and technology. B 14 (1996), S. 3514-3519, [Article]

Item Type: Article
Erschienen: 1996
Creators: Vogt, Alexander and Hartnagel, and Miehe, and Fuess, and Schmitz, and Hartnagel, and Miehe, and Fuess, and Schmitz,
Title: Electrical and microstructure analysis of ohmic contacts to p- and n-type GaSb, grown by molecular beam epitaxy
Language: English
Journal or Publication Title: Journal of vacuum science and technology. B 14 (1996), S. 3514-3519
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
Date Deposited: 19 Nov 2008 16:00
License: [undefiniert]
Export:

Optionen (nur für Redakteure)

View Item View Item