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Number of items: 7.

Chowdhury, D. Roy ; Saglam, M. ; Mutamba, K. ; Hartnagel, H. L. (2005):
A novel way to reduce conduction current in Al0:7Ga0:3As/GaAs heterostructure Barier Varactors.
In: Proceedings of the XIII International Workshop on Physics of Semiconductor Devices (IWPSD-2005) : December 13 - 17, 2005 / National Physical Laboratory, New Delhi. Ed.: Vikram Kumar ... Vol. 2, S. 817-821 ISBN: 81-7764947-7, [Conference or Workshop Item]

Sigmund, Jochen ; Saglam, M. ; Vogt, Alexander ; Hartnagel, H. L. ; Buschmann, V. ; Wieder, Thomas ; Fuess, H. (2001):
Microstructure analysis of ohmic contacts on MBE grown n-GaSb and investigation of submicron contacts.
227-228, In: Journal of Crystal Growth, pp. 625-629. Elsevier, ISSN 0022-0248,
DOI: 10.1016/S0022-0248(01)00785-0,
[Article]

Sigmund, Jochen ; Saglam, M. ; Vogt, Alexander ; Hartnagel, H. L. ; Buschmann, V. ; Wieder, Thomas ; Fuess, H. (2000):
Microstructure analysis of Ohmic contacts on MBE grown n-GaSb layers and investigation of submicron contacts.
In: MBE-XI: International Conference on Molecular Beam Epitaxy <11, 2000, Beijing, China>: Abstract Book.S. 275, [Conference or Workshop Item]

Hartnagel, Hans L. ; Lin, C. I. ; Rodriguez-Girones, M. ; Ichizli, V. ; Saglam, M. ; Szeliga, P. (2000):
Recent development in device technology for integrated THz circuits.
In: GAAS 2000: Gallium Arsenide and other Semiconductors Application Symposium <2000, La Defense, Paris>: Proceedings, [Conference or Workshop Item]

Sigmund, Jochen ; Saglam, M. ; Cojocari, O. ; Tiginyanu, I. ; Hartnagel, H. L. (2000):
Untersuchungen von epitaktischem Überwachsen auf porösen GaP und n-GaAs Substraten.
In: Epitaxie von III/V-Halbleitern: 15. Workshop des DGKK-Arbeitskreises , 2000 Bad Dürkheim. Tagungsbd., [Conference or Workshop Item]

Bozzi, M. ; Saglam, M. ; Rodriguez-Girones, M. ; Perregrini, L. ; Hartnagel, H. L. (2000):
A new evolutionary approach for the analysis and optimization of THz nonlinear circuits.
In: International Conference on Terahertz Electronics <8, 2000, Darmstadt>. - Berlin, Offenbach: VDE-Verl., 2000, Berlin, Offenbach, VDE-Verl., [Conference or Workshop Item]

Lin, Chih-I. ; Vogt, Alexander ; Saglam, M. ; Hartnagel, H. L. (1999):
GaAs-Schottkydioden mit InAs-Elektrode.
In: MBE: Molecular Beam Epitaxy Workshop <1999, Würzburg>; Proceedings, [Conference or Workshop Item]

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