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Ohmic contact formation mechanics of the PdGeAu system on n-type GaSb grown by molecular beam epitaxy

Vogt, Alexander and Simon, A. and Hartnagel, H. L. and Schikora, J. and Buschmann, V. and Rodewald, M. and Fuess, H. and Fascko, S. and Koerdt, C. and Kurz, H. (1998):
Ohmic contact formation mechanics of the PdGeAu system on n-type GaSb grown by molecular beam epitaxy.
In: Journal of Applied Physics, American Institute of Physics, pp. 7715-7719, 83, (12), ISSN 0021-8979, [Article]

Item Type: Article
Erschienen: 1998
Creators: Vogt, Alexander and Simon, A. and Hartnagel, H. L. and Schikora, J. and Buschmann, V. and Rodewald, M. and Fuess, H. and Fascko, S. and Koerdt, C. and Kurz, H.
Title: Ohmic contact formation mechanics of the PdGeAu system on n-type GaSb grown by molecular beam epitaxy
Language: English
Journal or Publication Title: Journal of Applied Physics
Volume: 83
Number: 12
Publisher: American Institute of Physics
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
Date Deposited: 19 Nov 2008 16:20
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