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Ohmic contact formation mechanics of the PdGeAu system on n-type GaSb grown by molecular beam epitaxy

Vogt, Alexander ; Simon, A. ; Hartnagel, H. L. ; Schikora, J. ; Buschmann, V. ; Rodewald, M. ; Fuess, H. ; Fascko, S. ; Koerdt, C. ; Kurz, H. (1998):
Ohmic contact formation mechanics of the PdGeAu system on n-type GaSb grown by molecular beam epitaxy.
83, In: Journal of Applied Physics, (12), pp. 7715-7719. American Institute of Physics, ISSN 0021-8979,
[Article]

Item Type: Article
Erschienen: 1998
Creators: Vogt, Alexander ; Simon, A. ; Hartnagel, H. L. ; Schikora, J. ; Buschmann, V. ; Rodewald, M. ; Fuess, H. ; Fascko, S. ; Koerdt, C. ; Kurz, H.
Title: Ohmic contact formation mechanics of the PdGeAu system on n-type GaSb grown by molecular beam epitaxy
Language: English
Journal or Publication Title: Journal of Applied Physics
Volume: 83
Number: 12
Publisher: American Institute of Physics
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
Date Deposited: 19 Nov 2008 16:20
License: [undefiniert]
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