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Microwave noise measurements on Al 0.3Ga 0.7As/GaAs channels grown by molecular beam epitaxy using As2 and As4

Miranda-Pantoja, J. M. ; Vogt, Alexander ; Schuessler, M. ; Shaalan, M. ; Matulionis, A. ; Sebastian, J. L. ; Hartnagel, H. L. (1998):
Microwave noise measurements on Al 0.3Ga 0.7As/GaAs channels grown by molecular beam epitaxy using As2 and As4.
In: Journal of semiconductor science and technology. 1998, H. 13, S. 833-836, [Article]

Item Type: Article
Erschienen: 1998
Creators: Miranda-Pantoja, J. M. ; Vogt, Alexander ; Schuessler, M. ; Shaalan, M. ; Matulionis, A. ; Sebastian, J. L. ; Hartnagel, H. L.
Title: Microwave noise measurements on Al 0.3Ga 0.7As/GaAs channels grown by molecular beam epitaxy using As2 and As4
Language: English
Journal or Publication Title: Journal of semiconductor science and technology. 1998, H. 13, S. 833-836
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
Date Deposited: 19 Nov 2008 16:22
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