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Vogt, Alexander and Simon, A. and Hartnagel, H. L. and Schikora, J. and Buschmann, V. and Rodewald, M. and Fuess, H. and Fascko, S. and Koerdt, C. and Kurz, H. (1998):
Ohmic contact formation mechanics of the PdGeAu system on n-type GaSb grown by molecular beam epitaxy.
In: Journal of Applied Physics, American Institute of Physics, pp. 7715-7719, 83, (12), ISSN 0021-8979,
[Article]

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