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Pressure effects in AlGaAs/GaAs resonant tunnelling diodes for applications in semiconductor sensors

Mutamba, Kabula and Flath, and Sigurdardottir, A. and Vogt, Alexander and Hartnagel, H. L. (1996):
Pressure effects in AlGaAs/GaAs resonant tunnelling diodes for applications in semiconductor sensors.
In: Lithunian journal of physics. 36 (1996), No. 6, S. 563-565, [Article]

Item Type: Article
Erschienen: 1996
Creators: Mutamba, Kabula and Flath, and Sigurdardottir, A. and Vogt, Alexander and Hartnagel, H. L.
Title: Pressure effects in AlGaAs/GaAs resonant tunnelling diodes for applications in semiconductor sensors
Language: English
Journal or Publication Title: Lithunian journal of physics. 36 (1996), No. 6, S. 563-565
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
Date Deposited: 19 Nov 2008 16:22
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