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Number of items: 3.

Vogt, Alexander and Simon, A. and Weber, and Hartnagel, H. L. and Schikora, J. and Buschmann, V. and Fuess, H. (1998):
Non-annealed Ohmic contacts to p-GaSb grown by molecular beam epitaxy.
In: EXMATEC´98: International Workshop on Expert Evaluation and Control Compound Semiconductor Materials and Technologies <1998, Cardiff>: Proceedings, [Conference or Workshop Item]

Vogt, Alexander and Simon, A. and Hartnagel, H. L. and Schikora, J. and Buschmann, V. and Rodewald, M. and Fuess, H. and Fascko, S. and Koerdt, C. and Kurz, H. (1998):
Ohmic contact formation mechanics of the PdGeAu system on n-type GaSb grown by molecular beam epitaxy.
In: Journal of Applied Physics, American Institute of Physics, pp. 7715-7719, 83, (12), ISSN 0021-8979,
[Article]

Vogt, Alexander and Simon, A. and Hartnagel, H. L. and Schikora, J. and Buschmann, V. and Rodewald, M. and Fuess, H. and Fascko, S. and Kurz, H. (1998):
Ohmsche Kontakte des Systems Pd/Ge/Au auf n-GaSb.
In: Jahrestagung Deutsche Gesellschaft für Kristallographie <6, 1998, Karlsruhe>: Tagungsbd., [Conference or Workshop Item]

This list was generated on Sat Jul 13 01:39:43 2019 CEST.