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Non-annealed Ohmic contacts to p-GaSb grown by molecular beam epitaxy

Vogt, Alexander and Simon, A. and Weber, and Hartnagel, H. L. and Schikora, J. and Buschmann, V. and Fuess, H. (1998):
Non-annealed Ohmic contacts to p-GaSb grown by molecular beam epitaxy.
In: EXMATEC´98: International Workshop on Expert Evaluation and Control Compound Semiconductor Materials and Technologies <1998, Cardiff>: Proceedings, [Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 1998
Creators: Vogt, Alexander and Simon, A. and Weber, and Hartnagel, H. L. and Schikora, J. and Buschmann, V. and Fuess, H.
Title: Non-annealed Ohmic contacts to p-GaSb grown by molecular beam epitaxy
Language: English
Series Name: EXMATEC´98: International Workshop on Expert Evaluation and Control Compound Semiconductor Materials and Technologies <1998, Cardiff>: Proceedings
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
Date Deposited: 19 Nov 2008 16:20
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