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Number of items: 29.

Article

Sigmund, Jochen and Saglam, M. and Vogt, Alexander and Hartnagel, H. L. and Buschmann, V. and Wieder, Thomas and Fuess, H. (2001):
Microstructure analysis of ohmic contacts on MBE grown n-GaSb and investigation of submicron contacts.
In: Journal of crystal growth, pp. 625-629, 227-22, [Article]

Facsko, S. and Dekorsy, T. and Trappe, C. and Kurz, H. and Vogt, Alexander and Hartnagel, H. L. (1999):
Formation of ordered nanoscale semiconductor dots by ion sputtering.
In: American Association for Advance of Science, pp. 1551-1553, 285, [Article]

Tiginyanu, I. and Ursaki, V. V. and Raptis, Y. S. and Stergiou, V. and Anatassakis, E. and Hartnagel, H. L. and Vogt, Alexander and Prevot, B. and Schwab, C. (1999):
Raman modes in porous GaP under hydrostatic pressure.
In: Physica status solidi, pp. 281-286, 211, [Article]

Ichizli, Victoria M. and Vogt, Alexander and Sigurdardottir, A. and Tiginyanu, I. M. and Hartnagel, H. L. (1999):
Tunneling spectroscopy of AlAs and InSb interfaces in InAs/AlSb heterostructures.
In: Semiconductor science and technology, pp. 143-147, 14, [Article]

Miranda-Pantoja, J. M. and Vogt, Alexander and Schüßler, M. and Shaalan, M. and Matulionis, A. and Sebastian, J. L. and Hartnagel, H. L. (1998):
Microwave noise measurements on Al 0.3Ga 0.7As/GaAs channels grown by molecular beam epitaxy using As2 and As4.
In: Journal of semiconductor science and technology. 1998, H. 13, S. 833-836, [Article]

Vogt, Alexander and Simon, A. and Hartnagel, H. L. and Schikora, J. and Buschmann, V. and Rodewald, M. and Fuess, H. and Fascko, S. and Koerdt, C. and Kurz, H. (1998):
Ohmic contact formation mechanics of the PdGeAu system on n-type GaSb grown by molecular beam epitaxy.
In: Journal of Applied Physics, American Institute of Physics, pp. 7715-7719, 83, (12), ISSN 0021-8979,
[Article]

Mutamba, Kabula and Sigurdardottir, A. and Vogt, Alexander and Hartnagel, H. L. and Li, E. H. (1998):
A comparative study of uniaxial pressure effects in intraband AlGaAs/GaAs and interband in As/AlSb/GaSb resonant tunneling diodes.
In: Applied physics letters. 72 (1998), H.13, S.1629-1631, [Article]

Vogt, Alexander and Brandt, and Sigurdardottir, A. and Schüssler, and Pena, and Simon, and Hartnagel, H. L. and Rodewald, and Roesner, (1997):
Characterisation of degradation mechanisms in resonant tunnelling diodes.
In: Microelectronics and reliability. 37 (1997), S. 1691-1694, [Article]

Peerlings, Joachim and Dehé, A. and Vogt, Alexander and Tilsch, M. and Hebeler, C. and Langenhan, F. and Meißner, P. and Hartnagel, H. L. (1997):
Long resonator micromachined tunable GaAs/AlAs Fabry-Pérot filter.
In: IEEE Photonics technology letters. 9 (1997), 9, S. 1235-1237, [Article]

Tiginyanu, I. and Irmer, G. and Monecke, J. and Vogt, Alexander and Hartnagel, H. L. (1997):
Porosity-induced modification of the phonon spectrum of n-GaAs.
In: Semiconductor science technology. 12 (1997), S. 491-493, [Article]

Vogt, Alexander and Hartnagel, and Miehe, and Fuess, and Schmitz, and Hartnagel, and Miehe, and Fuess, and Schmitz, (1996):
Electrical and microstructure analysis of ohmic contacts to p- and n-type GaSb, grown by molecular beam epitaxy.
In: Journal of vacuum science and technology. B 14 (1996), S. 3514-3519, [Article]

Mutamba, Kabula and Flath, and Sigurdardottir, A. and Vogt, Alexander and Hartnagel, H. L. (1996):
Pressure effects in AlGaAs/GaAs resonant tunnelling diodes for applications in semiconductor sensors.
In: Lithunian journal of physics. 36 (1996), No. 6, S. 563-565, [Article]

Conference or Workshop Item

Sigmund, Jochen and Saglam, M. and Vogt, Alexander and Hartnagel, H. L. and Buschmann, V. and Wieder, Thomas and Fuess, H. (2000):
Microstructure analysis of Ohmic contacts on MBE grown n-GaSb layers and investigation of submicron contacts.
In: MBE-XI: International Conference on Molecular Beam Epitaxy <11, 2000, Beijing, China>: Abstract Book.S. 275, [Conference or Workshop Item]

Lin, Chih-I. and Vogt, Alexander and Saglam, M. and Hartnagel, H. L. (1999):
GaAs-Schottkydioden mit InAs-Elektrode.
In: MBE: Molecular Beam Epitaxy Workshop <1999, Würzburg>; Proceedings, [Conference or Workshop Item]

Mutamba, Kabula and Sigurdardottir, A. and Vogt, Alexander and Pfeiffer, J. and Behner, U. and Di Carlo, A. and Hartnagel, H. L. (1999):
Micromachined pressure sensors with AlGaAs/GaAs- and InAs/AlSb/GaSb-resonant tunneling diodes.
In: Annual Device Research Conference <57, 1999, Santa Barbara, Calif.>: Digest, [Conference or Workshop Item]

Vogt, Alexander and Simon, A. and Weber, and Hartnagel, H. L. and Schikora, J. and Buschmann, V. and Fuess, H. (1998):
Non-annealed Ohmic contacts to p-GaSb grown by molecular beam epitaxy.
In: EXMATEC´98: International Workshop on Expert Evaluation and Control Compound Semiconductor Materials and Technologies <1998, Cardiff>: Proceedings, [Conference or Workshop Item]

Vogt, Alexander and Simon, A. and Hartnagel, H. L. and Schikora, J. and Buschmann, V. and Rodewald, M. and Fuess, H. and Fascko, S. and Kurz, H. (1998):
Ohmsche Kontakte des Systems Pd/Ge/Au auf n-GaSb.
In: Jahrestagung Deutsche Gesellschaft für Kristallographie <6, 1998, Karlsruhe>: Tagungsbd., [Conference or Workshop Item]

Shaalan, Mohamed and Beilenhoff, K. and Bozzi, M. and Weinzierl, J. and Conciauro, G. and Vogt, Alexander and Weber, J. and Fischer, H. and Kiesow, M. (1997):
A 300 GHz integrated quasioptical frequency multiplier.
In: International Conference on Infrared and Millimeter Waves <22, 1997, Wintergreen Resort, Virginia, USA>: Proceedings, [Conference or Workshop Item]

Mutamba, Kabula and Pfeiffer, J. and Peerlings, J. and Riemenschneider, R. and Vogt, Alexander and Dehé, A. and Brauch, M. and Meister, B. and Dragojevic, N. (1997):
ANSYS-structural design of micromachined Fabry-Pérot filter with planar membranes.
In: International Topical Meeting on Photoelectronics <1997, Beijing, China>: Proceedings, [Conference or Workshop Item]

Vogt, Alexander and Brandt, and Sigurdardottir, A. and Schüßler, and Pena, and Simon, and Hartnagel, H. L. and Rodewald, and Roesner, (1997):
Characterisation of degradation mechanisms in resonant tunneling diodes.
In: European Symposium of Electron Devices, Failure Physics and Analysis <8, 1997, Arcachon, France>: Proceedings. S. 1691-1694, [Conference or Workshop Item]

Shaalan, Mohamed and Bozzi, M. and Weinzierl, J. and Miranda, J. and Vogt, Alexander and Weber, J. and Hartnagel, H. L. and Conciauro, G. (1997):
First design of a 430 GHz quasioptical HBV tripler.
In: International Workshop on Terahertz Electronics <5, 1997, Grenoble, France>: Proceedings, [Conference or Workshop Item]

Peerlings, Joachim and Dehé, A. and Vogt, Alexander and Tilsch, M. and Hebeler, C. and Langenhan, F. and Meißner, P. and Hartnagel, H. L. (1997):
GaAs/AlAs micromachined tunable Fabry-Pérot filters with long resonant cavity.
In: Eurosensors <11, 1997, Warszawa, Poland>: Proceedings, [Conference or Workshop Item]

Sigurdardottir, Anna and Mutamba, K. and Vogt, Alexander and Hartnagel, H. L. (1997):
Investigation on the tunneling effect in stressed InAs/AlSb/GaSb-resonant-tunneling diodes.
In: Workshop on Compound Semiconductor Devices and Integrated Circuits <21, 1997, Scheveningen, NL>: Proceedings, [Conference or Workshop Item]

Vogt, Alexander and Simon, and Hartnagel, and Rodewald, and Fuess, and Ressel, and Vogel, and Würfl, (1997):
Pd-based Ohmic contacts to GaSb.
In: WOCSDICE'97 <1997, Scheveningen, NL>: Proceedings, [Conference or Workshop Item]

Mutamba, Kabula and Sigurdardottir, A. and Vogt, Alexander and Hartnagel, H. L. (1997):
Stress effects in AlGaAs/GaAs and InAs/AlSb/GaSb RTDs for sensing applications.
In: Phantoms Strategic Domain Meeting on Physics and Technology of Mesoscopic Systems <1997, Aachen, Germany>: Abstracts, [Conference or Workshop Item]

Mutamba, Kabula and Flath, and Vogt, Alexander and Sigurdardottir, A. and Dehé, A. and Hartnagel, H. L. (1996):
Pressure sensors based on stress dependence of AlGaAs/GaAs RTD characteristics.
In: Workshop on Heterostructures Technology <1996, Lille>: Proceedings, [Conference or Workshop Item]

Vogt, Alexander and Brandt, and Pena, and Aller, and Hartnagel, (1996):
Wachstum und Zuverlässigkeit von resonanten Tunneldioden.
In: Molecular Beam Epitaxy Workshop <1996, Frankfurt/Oder>: Proceedings, [Conference or Workshop Item]

Shaalan, Mohamed and Vogt, Alexander and Weber, J. and Steup, D. and Eiermann, (1996):
A novel 300 GHz doubler. Part II: Chip fabrication and initial characterisation.
In: International Workshop on Terahertz Electronics <4, 1996, Erlangen>: Proceedings, [Conference or Workshop Item]

Ph.D. Thesis

Vogt, Alexander (1998):
Technologiebeiträge zur Herstellung von Heterostrukturbauelementen aus dem Halbleitersystem InAs-GaSb-AlSb.
Aachen, Shaker, TU Darmstadt, ISBN 3-8265-4523-0,
[Ph.D. Thesis]

This list was generated on Tue Jul 23 01:08:40 2019 CEST.