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Number of items: 20.

Ichizli, Victoria M. and Droba, M. and Mutamba, K. and Sigurdardottir, A. and Hartnagel, H. L. (2001):
Comparative investigation of interface effect on transmission function of electrons and holes in InAs/AlSb-based heterostructures.
In: PCSI-28: International Conference on Physics and Chemistry of Semiconductor Interfaces <28, 2001, Orlando, Florida>; Proceedings, [Conference or Workshop Item]

Ichizli, Victoria M. and Mutamba, K. and Droba, M. and Sigurdardottir, A. and Hartnagel, H. L. (2000):
Interface tuning of the InAs/AlSb heterostructure-based quantum wells.
In: Journal of vacuum science and technology, pp. S. 2279-2283, B 18, [Article]

Micheel, Lutz and Sigurdardottir, A. and Hartnagel, H. L. and Mutamba, K. (1999):
GaAs- and InP-based technologies of resonant tunneling devices.
In: International Workshop on Post-Binary Ultra-Large-Scale Integration systems <8, 1999, Freiburg im Breisgau>: Proceedings, [Conference or Workshop Item]

Mutamba, Kabula and Sigurdardottir, A. and Vogt, Alexander and Pfeiffer, J. and Behner, U. and Di Carlo, A. and Hartnagel, H. L. (1999):
Micromachined pressure sensors with AlGaAs/GaAs- and InAs/AlSb/GaSb-resonant tunneling diodes.
In: Annual Device Research Conference <57, 1999, Santa Barbara, Calif.>: Digest, [Conference or Workshop Item]

Micheel, Lutz and Sigurdardottir, A. and Hartnagel, H. L. and Mutamba, K. (1999):
Programmable HBT-Quantum dot structures for arithmetic MVL.
In: International Workshop on Post-Binary Ultra-Large-Scale Integration Systems <8, 1999, Freiburg im Breisgau>: Proceedings,, [Conference or Workshop Item]

Ichizli, Victoria M. and Vogt, Alexander and Sigurdardottir, A. and Tiginyanu, I. M. and Hartnagel, H. L. (1999):
Tunneling spectroscopy of AlAs and InSb interfaces in InAs/AlSb heterostructures.
In: Semiconductor science and technology, pp. 143-147, 14, [Article]

Sim, St. K. H. and Li, and Sigurdardottir, A. and Mutamba, and Hartnagel, H. L. (1998):
Intersubband absorption in a typ-I interdiffused quantum-well infrared photodetector.
In: PHOTONICS´98: International Conference on Fiber Optics and Photonics <1998, Delhi>: Proceedings, [Conference or Workshop Item]

Sim, St. K. H. and Mutamba, and Sigurdardottir, A. and Hartnagel, H. L. (1998):
Medium wavelength infrared detector with diffused Al x In 1-x Sb/InSb quantum-wells structure.
In: HKEDM´98: Hong Kong Electron. Dev. Meeting <1998, Hong Kong>: Proceedings, [Conference or Workshop Item]

Hartnagel, Hans L. and Mutamba, and Sigurdardottir, A. (1998):
A basic quantum dot element: proposal of a HBT-dot cell for high-packing density memory circuits.
In: International Workshop on Physics and Modelling of Devices based on Low-Dimensional Structures <2, 1998, Aizu-Wakamatsu, Japan>: Proceedings. S. 18-22, [Conference or Workshop Item]

Mutamba, Kabula and Sigurdardottir, A. and Vogt, Alexander and Hartnagel, H. L. and Li, E. H. (1998):
A comparative study of uniaxial pressure effects in intraband AlGaAs/GaAs and interband in As/AlSb/GaSb resonant tunneling diodes.
In: Applied physics letters. 72 (1998), H.13, S.1629-1631, [Article]

DasGupta, A. and Arslan, D. and Sigurdardottir, A. and Hartnagel, H. L. (1998):
A novel self-consistent simulator for current-density-voltage-characteristics of semiconductor field emitters.
In: Applied physicics letters. 72 (1998), H. 10, S. 1220-1222, [Article]

Vogt, Alexander and Brandt, and Sigurdardottir, A. and Schüßler, and Pena, and Simon, and Hartnagel, H. L. and Rodewald, and Roesner, (1997):
Characterisation of degradation mechanisms in resonant tunneling diodes.
In: European Symposium of Electron Devices, Failure Physics and Analysis <8, 1997, Arcachon, France>: Proceedings. S. 1691-1694, [Conference or Workshop Item]

Vogt, Alexander and Brandt, and Sigurdardottir, A. and Schüssler, and Pena, and Simon, and Hartnagel, H. L. and Rodewald, and Roesner, (1997):
Characterisation of degradation mechanisms in resonant tunnelling diodes.
In: Microelectronics and reliability. 37 (1997), S. 1691-1694, [Article]

Mutamba, Kabula and Sigurdardottir, A. and Hartnagel, H. L. (1997):
Concept of nanometric high density charge coupled devices.
In: Workshop on Innovative Circuits and Systems for Nano Electronics <2, 1997, Delft, NL>: Proceedings, [Conference or Workshop Item]

Mutamba, Kabula and Sigurdardottir, A. and Vogt, Alexander and Hartnagel, H. L. (1997):
Stress effects in AlGaAs/GaAs and InAs/AlSb/GaSb RTDs for sensing applications.
In: Phantoms Strategic Domain Meeting on Physics and Technology of Mesoscopic Systems <1997, Aachen, Germany>: Abstracts, [Conference or Workshop Item]

Mutamba, Kabula and Flath, and Sigurdardottir, A. and Vogt, Alexander and Hartnagel, H. L. (1996):
Pressure effects in AlGaAs/GaAs resonant tunnelling diodes for applications in semiconductor sensors.
In: Lithunian journal of physics. 36 (1996), No. 6, S. 563-565, [Article]

Mutamba, Kabula and Flath, and Vogt, Alexander and Sigurdardottir, A. and Dehé, A. and Hartnagel, H. L. (1996):
Pressure sensors based on stress dependence of AlGaAs/GaAs RTD characteristics.
In: Workshop on Heterostructures Technology <1996, Lille>: Proceedings, [Conference or Workshop Item]

Mutamba, Kabula and Sigurdardottir, A. and Miao, J. and Dehé, A. and Aller, and Hartnagel, H. L. (1996):
Uniaxial stress dependence of AlGaAs/GaAs RTD characteristics for sensor applications.
In: Micromechanics Europe Conference <1996, Barcelona, Spain>: Proceedings. S. 85, [Conference or Workshop Item]

Höhler, Rainer and Epp, and Sigurdardottir, A. and Hille, and Gaida, and Walluks, and Strack, (1995):
Ein hochgenauer Sensor zur optoelektronischen Bildauswertung.
Illmenau, Techn. Universität, In: Internationales Wissenschaftliches Kolloquium <40, 1995 Illmenau>: Tagungsband. Bd. 1. S. 784-789, [Conference or Workshop Item]

Grüb, Andreas and Simon, and Krozer, and Lin, and Shaalan, and Beilenhoff, and Sigurdardottir, A. and Hartnagel, H. L. (1995):
Terahertz research at TH Darmstadt.
In: International Workshop on Terahertz Electronics <3, 1995, Zermatt, Schweiz>: Proceedings, [Conference or Workshop Item]

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