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Litovchenko, V. ; Evtukh, A. ; Semenenko, M. ; Grigoriev, A. ; Yilmazoglu, Oktay ; Hartnagel, Hans L. ; Sirbu, L. ; Tiginyanu, I. M. ; Ursaki, V. V. :
Electron field emission from narrow band gap semiconductors (InAs).
In: Semiconductor science and technology, 22 S. 1092-1096.
[Artikel] , (2007)

Cojocari, Oleg ; Popa, V. ; Ursaki, V. V. ; Tiginyanu, I. M. ; Hartnagel, Hans L. ; Daumiller, I. :
GaN Schottky multiplier diodes prepared by electroplating : a study of passivation technology.
In: Semiconductor science and technology, 19 S. 1273-1279.
[Artikel] , (2004)

Cojocari, Oleg ; Popa, V. ; Ursaki, V. V. ; Tiginyanu, I. M. ; Mutamba, Kabula ; Saglam, Mustafa ; Hartnagel, Hans L. :
Micrometer-size GaN Schottky-diodes for MM-wave frequency multipliers.
In: Conference digest of the 2004 joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics : September 27 - October 1, 2004, University of Karlsruhe (TH), Karlsruhe, Germany / [sponsored b . IEEE Operations Center , M. Thumm ..., ed.- Piscataway, NJ
[ Konferenzveröffentlichung] , (2004)

Syrbu, N. N. ; Tiginyanu, I. M. ; Ursaki, V. V. ; Zalamai, V. V. ; Popa, V. ; Hubbard, S. M. ; Pavlidis, Dimitris :
Free excitons in strained MOCVD-grown GaN layers.
In: MRS internet journal of nitride semiconductor research, Vol. 8 S. 1-5.
[Artikel] , (2003)

Tiginyanu, I. M. ; Ursaki, V. V. ; Zalamai, V. V. ; Langa, S. ; Hubbard, S. M. ; Pavlidis, Dimitris ; Föll, H. :
Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching.
In: Applied physics letters, Vol. 8 S. 1551-1553.
[Artikel] , (2003)

Ursaki, V. V. ; Tiginyanu, I. M. ; Zalamai, V. V. ; Hubbard, S. M. ; Pavlidis, Dimitris :
Optical characterization of AlN/GaN heterostructure.
In: Journal of applied physics, Vol. 9 S. 4813-481.
[Artikel] , (2003)

Ursaki, V. V. ; Tiginyanu, I. M. ; Ricci, P. C. ; Anedda, A. ; Hubbard, S. M. ; Pavlidis, Dimitris :
Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation.
In: Journal of applied physics, Vol. 9 S. 3875-388.
[Artikel] , (2003)

Ursaki, V. V. ; Tiginyanu, I. M. ; Syrbu, N. N. ; Zalamai, V. V. ; Hubbard, S. M. ; Pavlidis, Dimitris :
Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures.
In: Semiconductor science and technology, 18 L9-L11.
[Artikel] , (2003)

Sarua, A. ; Tiginyanu, I. M. ; Ursaki, V. V. ; Irmer, G. ; Monecke, K. ; Hartnagel, H. L. :
Charge carrier distribution in free-standing porous GaP membranes studied by Raman spectroscopy.
In: Solid state communications, 112 S. 581-585.
[Artikel] , (1999)

Tiginyanu, I. ; Ursaki, V. V. ; Raptis, Y. S. ; Stergiou, V. ; Anatassakis, E. ; Hartnagel, H. L. ; Vogt, Alexander ; Prevot, B. ; Schwab, C. :
Raman modes in porous GaP under hydrostatic pressure.
In: Physica status solidi, 211 S. 281-286.
[Artikel] , (1999)

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