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Number of items: 10.

Litovchenko, V. and Evtukh, A. and Semenenko, M. and Grigoriev, A. and Yilmazoglu, Oktay and Hartnagel, Hans L. and Sirbu, L. and Tiginyanu, I. M. and Ursaki, V. V. (2007):
Electron field emission from narrow band gap semiconductors (InAs).
In: Semiconductor science and technology, pp. 1092-1096, 22, [Article]

Cojocari, Oleg and Popa, V. and Ursaki, V. V. and Tiginyanu, I. M. and Hartnagel, Hans L. and Daumiller, I. (2004):
GaN Schottky multiplier diodes prepared by electroplating : a study of passivation technology.
In: Semiconductor science and technology, pp. 1273-1279, 19, [Article]

Cojocari, Oleg and Popa, V. and Ursaki, V. V. and Tiginyanu, I. M. and Mutamba, Kabula and Saglam, Mustafa and Hartnagel, Hans L. (2004):
Micrometer-size GaN Schottky-diodes for MM-wave frequency multipliers.
M. Thumm ..., ed.- Piscataway, NJ, IEEE Operations Center, In: Conference digest of the 2004 joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics : September 27 - October 1, 2004, University of Karlsruhe (TH), Karlsruhe, Germany / [sponsored b, [Conference or Workshop Item]

Syrbu, N. N. and Tiginyanu, I. M. and Ursaki, V. V. and Zalamai, V. V. and Popa, V. and Hubbard, S. M. and Pavlidis, Dimitris (2003):
Free excitons in strained MOCVD-grown GaN layers.
In: MRS internet journal of nitride semiconductor research, pp. 1-5, Vol. 8, [Article]

Tiginyanu, I. M. and Ursaki, V. V. and Zalamai, V. V. and Langa, S. and Hubbard, S. M. and Pavlidis, Dimitris and Föll, H. (2003):
Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching.
In: Applied physics letters, pp. 1551-1553, Vol. 8, [Article]

Ursaki, V. V. and Tiginyanu, I. M. and Zalamai, V. V. and Hubbard, S. M. and Pavlidis, Dimitris (2003):
Optical characterization of AlN/GaN heterostructure.
In: Journal of applied physics, pp. 4813-481, Vol. 9, [Article]

Ursaki, V. V. and Tiginyanu, I. M. and Ricci, P. C. and Anedda, A. and Hubbard, S. M. and Pavlidis, Dimitris (2003):
Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation.
In: Journal of applied physics, pp. 3875-388, Vol. 9, [Article]

Ursaki, V. V. and Tiginyanu, I. M. and Syrbu, N. N. and Zalamai, V. V. and Hubbard, S. M. and Pavlidis, Dimitris (2003):
Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures.
In: Semiconductor science and technology, pp. L9-L11, 18, [Article]

Sarua, A. and Tiginyanu, I. M. and Ursaki, V. V. and Irmer, G. and Monecke, K. and Hartnagel, H. L. (1999):
Charge carrier distribution in free-standing porous GaP membranes studied by Raman spectroscopy.
In: Solid state communications, pp. 581-585, 112, [Article]

Tiginyanu, I. and Ursaki, V. V. and Raptis, Y. S. and Stergiou, V. and Anatassakis, E. and Hartnagel, H. L. and Vogt, Alexander and Prevot, B. and Schwab, C. (1999):
Raman modes in porous GaP under hydrostatic pressure.
In: Physica status solidi, pp. 281-286, 211, [Article]

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