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Number of items: 10.

Litovchenko, V. ; Evtukh, A. ; Semenenko, M. ; Grigoriev, A. ; Yilmazoglu, Oktay ; Hartnagel, Hans L. ; Sirbu, L. ; Tiginyanu, I. M. ; Ursaki, V. V. (2007):
Electron field emission from narrow band gap semiconductors (InAs).
In: Semiconductor science and technology, 22, pp. 1092-1096. [Article]

Cojocari, Oleg ; Popa, V. ; Ursaki, V. V. ; Tiginyanu, I. M. ; Hartnagel, Hans L. ; Daumiller, I. (2004):
GaN Schottky multiplier diodes prepared by electroplating : a study of passivation technology.
In: Semiconductor science and technology, 19, pp. 1273-1279. [Article]

Cojocari, Oleg ; Popa, V. ; Ursaki, V. V. ; Tiginyanu, I. M. ; Mutamba, Kabula ; Saglam, Mustafa ; Hartnagel, Hans L. (2004):
Micrometer-size GaN Schottky-diodes for MM-wave frequency multipliers.
In: Conference digest of the 2004 joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics : September 27 - October 1, 2004, University of Karlsruhe (TH), Karlsruhe, Germany / [sponsored b, M. Thumm ..., ed.- Piscataway, NJ, IEEE Operations Center, [Conference or Workshop Item]

Syrbu, N. N. ; Tiginyanu, I. M. ; Ursaki, V. V. ; Zalamai, V. V. ; Popa, V. ; Hubbard, S. M. ; Pavlidis, Dimitris (2003):
Free excitons in strained MOCVD-grown GaN layers.
In: MRS Internet Journal of Nitride Semiconductor Research, 8 (1), Springer Nature, e-ISSN 1092-5783,
DOI: 10.1557/S1092578300000442,
[Article]

Ursaki, V. V. ; Tiginyanu, I. M. ; Zalamai, V. V. ; Hubbard, S. M. ; Pavlidis, Dimitris (2003):
Optical characterization of AlN/GaN heterostructure.
In: Journal of Applied Physics, 94 (8), pp. 4813-4818. American Institute of Physics, ISSN 00218979,
DOI: 10.1063/1.1609048,
[Article]

Ursaki, V. V. ; Tiginyanu, I. M. ; Ricci, P. C. ; Anedda, A. ; Hubbard, S. M. ; Pavlidis, Dimitris (2003):
Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation.
In: Journal of Applied Physics, 94 (6), pp. 3875-3882. American Institute of Physics, ISSN 0021-8979, e-ISSN 1089-7550,
DOI: 10.1063/1.1604950,
[Article]

Tiginyanu, I. M. ; Ursaki, V. V. ; Zalamai, V. V. ; Langa, S. ; Hubbard, S. M. ; Pavlidis, Dimitris ; Föll, H. (2003):
Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching.
In: Applied Physics Letters, 83 (8), pp. 1551-1553. AIP Publishing, ISSN 0003-6951,
DOI: 10.1063/1.1605231,
[Article]

Ursaki, V. V. ; Tiginyanu, I. M. ; Syrbu, N. N. ; Zalamai, V. V. ; Hubbard, S. M. ; Pavlidis, Dimitris (2003):
Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures.
18, In: Semiconductor science and technology, pp. L9-L11. [Article]

Sarua, A. ; Tiginyanu, I. M. ; Ursaki, V. V. ; Irmer, G. ; Monecke, K. ; Hartnagel, H. L. (1999):
Charge carrier distribution in free-standing porous GaP membranes studied by Raman spectroscopy.
112, In: Solid State Communications, (10), pp. 581-585. Elsevier ScienceDirect, ISSN 00381098,
DOI: 10.1016/S0038-1098(99)00385-3,
[Article]

Tiginyanu, I. ; Ursaki, V. V. ; Raptis, Y. S. ; Stergiou, V. ; Anatassakis, E. ; Hartnagel, H. L. ; Vogt, Alexander ; Prevot, B. ; Schwab, C. (1999):
Raman modes in porous GaP under hydrostatic pressure.
211, In: Physica status solidi, pp. 281-286. Wiley & Sons Ltd., [Article]

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