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Anzahl der Einträge: 19.

Litovchenko, V. ; Evtukh, A. ; Semenenko, M. ; Grigoriev, A. ; Yilmazoglu, Oktay ; Hartnagel, Hans L. ; Sirbu, L. ; Tiginyanu, I. M. ; Ursaki, V. V. :
Electron field emission from narrow band gap semiconductors (InAs).
In: Semiconductor science and technology, 22 S. 1092-1096.
[Artikel] , (2007)

Cojocari, Oleg ; Sydlo, Cezary ; Hartnagel, Hans L. ; Tiginyanu, I. M. :
Quasi-vertical Schottky-structures for THZ-Applications.
In: Proceedings of the 4th International Conference on Microelectronics and Computer Science (ICMCSı05), September 15-17, 2005, Chisinau, Moldova, pp. 219-225 .
[Konferenz- oder Workshop-Beitrag] , (2005)

Cojocari, Oleg ; Popa, V. ; Ursaki, V. V. ; Tiginyanu, I. M. ; Hartnagel, Hans L. ; Daumiller, I. :
GaN Schottky multiplier diodes prepared by electroplating : a study of passivation technology.
In: Semiconductor science and technology, 19 S. 1273-1279.
[Artikel] , (2004)

Cojocari, Oleg ; Popa, V. ; Ursaki, V. V. ; Tiginyanu, I. M. ; Mutamba, Kabula ; Saglam, Mustafa ; Hartnagel, Hans L. :
Micrometer-size GaN Schottky-diodes for MM-wave frequency multipliers.
In: Conference digest of the 2004 joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics : September 27 - October 1, 2004, University of Karlsruhe (TH), Karlsruhe, Germany / [sponsored b . IEEE Operations Center , M. Thumm ..., ed.- Piscataway, NJ
[Konferenz- oder Workshop-Beitrag] , (2004)

Yilmazoglu, Oktay ; Pavlidis, Dimitris ; Litvin, Yu. M. ; Hubbard, S. M. ; Tiginyanu, I. M. ; Mutamba, Kabula ; Hartnagel, Hans L. ; Litovchenko, V. G. ; Evtukh, A. A. :
Field emission from quantum size GaN structures.
In: Applied surface science, Vol. 2 S. 46-50.
[Artikel] , (2003)

Syrbu, N. N. ; Tiginyanu, I. M. ; Ursaki, V. V. ; Zalamai, V. V. ; Popa, V. ; Hubbard, S. M. ; Pavlidis, Dimitris :
Free excitons in strained MOCVD-grown GaN layers.
In: MRS internet journal of nitride semiconductor research, Vol. 8 S. 1-5.
[Artikel] , (2003)

Tiginyanu, I. M. ; Ursaki, V. V. ; Zalamai, V. V. ; Langa, S. ; Hubbard, S. M. ; Pavlidis, Dimitris ; Föll, H. :
Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching.
In: Applied physics letters, Vol. 8 S. 1551-1553.
[Artikel] , (2003)

Ursaki, V. V. ; Tiginyanu, I. M. ; Zalamai, V. V. ; Hubbard, S. M. ; Pavlidis, Dimitris :
Optical characterization of AlN/GaN heterostructure.
In: Journal of applied physics, Vol. 9 S. 4813-481.
[Artikel] , (2003)

Ursaki, V. V. ; Tiginyanu, I. M. ; Ricci, P. C. ; Anedda, A. ; Hubbard, S. M. ; Pavlidis, Dimitris :
Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation.
In: Journal of applied physics, Vol. 9 S. 3875-388.
[Artikel] , (2003)

Ursaki, V. V. ; Tiginyanu, I. M. ; Syrbu, N. N. ; Zalamai, V. V. ; Hubbard, S. M. ; Pavlidis, Dimitris :
Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures.
In: Semiconductor science and technology, 18 L9-L11.
[Artikel] , (2003)

Stevens-Kalceff, M. A. ; Tiginyanu, I. M. ; Langa, S. ; Föll, H. ; Hartnagel, H. L. :
Correlation between morphology and cathodoluminescence in porous GaP.
In: Journal of applied physics, 89
[Artikel] , (2001)

Saura, A. ; Monecke, J. ; Irmer, G. ; Tiginyanu, I. M. ; Gärtner, G. ; Hartnagel, H. L. :
Fröhlich modes in porous III-V semiconductors.
In: Journal of physics S. 6687-6706.
[Artikel] , (2001)

Schwab, C. ; Tiginyanu, I. M. ; Sarua, A. ; Irmer, G. ; Monecke, J. ; Sigmund, J. ; Hartnagel, H. L. :
Nanoporous membranes and heterostructures based on III-V compounds.
In: NATO Advanced Research Workshop on Frontiers of Nano-Optoelectronic Systems: Molecular Scale Engineering and Processes <2000, Kiev>: Proceedings. - Dordrecht (u.a.): Kluwer Acad. Publ., 2000 . Kluwer Acad. Publ. , Dordrecht (u.a.)
[Konferenz- oder Workshop-Beitrag] , (2000)

Kravetsky, V. ; Tiginyanu, I. M. ; Hildebrandt, R. ; Marowsky, G. ; Pavlidis, D. ; Eisenbach, A. ; Hartnagel, H. L. :
Nonlinear optical response of GaN layers on sapphire: the impact of fundamental beam interference.
In: Applied physics letters, 76 S. 810-812.
[Artikel] , (2000)

Monecke, J. ; Irmer, G. ; Sarua, A. ; Tiginyanu, I. M. ; Gartner, G. ; Hartnagel, H. L. :
Optische Phononen und elektrische Eigenschaften poröser GaP-Membranen.
In: Frühjahrstagung der Deutschen Physikalischen Gesellschaft <2000, Regensburg> = Verhandlungen der Deutschen Physikalischen Gesellschaft; 35,4 .
[Konferenz- oder Workshop-Beitrag] , (2000)

Sarua, A. ; Gärtner, G. ; Irmer, G. ; Monecke, J. ; Tiginyanu, I. M. ; Hartnagel, H. L. :
Raman and IR-reflectance spectra of porous III-V semiconductor structures.
In: Physica status solidi, A 182 S. 207-211.
[Artikel] , (2000)

Sarua, A. ; Irmer, G. ; Monecke, J. ; Tiginyanu, I. M. ; Schwab, C. ; Grob, J.-J. ; Hartnagel, H. L. :
Raman spectroscopy of porous and bulk GaP subjected to MeV-ion implantation and annealing.
In: Journal of applied physics, 88 S. 7006-7012.
[Artikel] , (2000)

Sarua, A. ; Tiginyanu, I. M. ; Ursaki, V. V. ; Irmer, G. ; Monecke, K. ; Hartnagel, H. L. :
Charge carrier distribution in free-standing porous GaP membranes studied by Raman spectroscopy.
In: Solid state communications, 112 S. 581-585.
[Artikel] , (1999)

Ichizli, Victoria M. ; Vogt, Alexander ; Sigurdardottir, A. ; Tiginyanu, I. M. ; Hartnagel, H. L. :
Tunneling spectroscopy of AlAs and InSb interfaces in InAs/AlSb heterostructures.
In: Semiconductor science and technology, 14 S. 143-147.
[Artikel] , (1999)

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