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Number of items: 19.

Litovchenko, V. and Evtukh, A. and Semenenko, M. and Grigoriev, A. and Yilmazoglu, Oktay and Hartnagel, Hans L. and Sirbu, L. and Tiginyanu, I. M. and Ursaki, V. V. (2007):
Electron field emission from narrow band gap semiconductors (InAs).
In: Semiconductor science and technology, pp. 1092-1096, 22, [Article]

Cojocari, Oleg and Sydlo, Cezary and Hartnagel, Hans L. and Tiginyanu, I. M. (2005):
Quasi-vertical Schottky-structures for THZ-Applications.
In: Proceedings of the 4th International Conference on Microelectronics and Computer Science (ICMCSı05), September 15-17, 2005, Chisinau, Moldova, pp. 219-225, [Conference or Workshop Item]

Cojocari, Oleg and Popa, V. and Ursaki, V. V. and Tiginyanu, I. M. and Hartnagel, Hans L. and Daumiller, I. (2004):
GaN Schottky multiplier diodes prepared by electroplating : a study of passivation technology.
In: Semiconductor science and technology, pp. 1273-1279, 19, [Article]

Cojocari, Oleg and Popa, V. and Ursaki, V. V. and Tiginyanu, I. M. and Mutamba, Kabula and Saglam, Mustafa and Hartnagel, Hans L. (2004):
Micrometer-size GaN Schottky-diodes for MM-wave frequency multipliers.
M. Thumm ..., ed.- Piscataway, NJ, IEEE Operations Center, In: Conference digest of the 2004 joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics : September 27 - October 1, 2004, University of Karlsruhe (TH), Karlsruhe, Germany / [sponsored b, [Conference or Workshop Item]

Yilmazoglu, Oktay and Pavlidis, Dimitris and Litvin, Yu. M. and Hubbard, S. M. and Tiginyanu, I. M. and Mutamba, Kabula and Hartnagel, Hans L. and Litovchenko, V. G. and Evtukh, A. A. (2003):
Field emission from quantum size GaN structures.
In: Applied surface science, pp. 46-50, Vol. 2, [Article]

Syrbu, N. N. and Tiginyanu, I. M. and Ursaki, V. V. and Zalamai, V. V. and Popa, V. and Hubbard, S. M. and Pavlidis, Dimitris (2003):
Free excitons in strained MOCVD-grown GaN layers.
In: MRS internet journal of nitride semiconductor research, pp. 1-5, Vol. 8, [Article]

Tiginyanu, I. M. and Ursaki, V. V. and Zalamai, V. V. and Langa, S. and Hubbard, S. M. and Pavlidis, Dimitris and Föll, H. (2003):
Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching.
In: Applied physics letters, pp. 1551-1553, Vol. 8, [Article]

Ursaki, V. V. and Tiginyanu, I. M. and Zalamai, V. V. and Hubbard, S. M. and Pavlidis, Dimitris (2003):
Optical characterization of AlN/GaN heterostructure.
In: Journal of applied physics, pp. 4813-481, Vol. 9, [Article]

Ursaki, V. V. and Tiginyanu, I. M. and Ricci, P. C. and Anedda, A. and Hubbard, S. M. and Pavlidis, Dimitris (2003):
Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation.
In: Journal of applied physics, pp. 3875-388, Vol. 9, [Article]

Ursaki, V. V. and Tiginyanu, I. M. and Syrbu, N. N. and Zalamai, V. V. and Hubbard, S. M. and Pavlidis, Dimitris (2003):
Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures.
In: Semiconductor science and technology, pp. L9-L11, 18, [Article]

Stevens-Kalceff, M. A. and Tiginyanu, I. M. and Langa, S. and Föll, H. and Hartnagel, H. L. (2001):
Correlation between morphology and cathodoluminescence in porous GaP.
In: Journal of applied physics, 89, [Article]

Saura, A. and Monecke, J. and Irmer, G. and Tiginyanu, I. M. and Gärtner, G. and Hartnagel, H. L. (2001):
Fröhlich modes in porous III-V semiconductors.
In: Journal of physics, pp. 6687-6706, [Article]

Schwab, C. and Tiginyanu, I. M. and Sarua, A. and Irmer, G. and Monecke, J. and Sigmund, J. and Hartnagel, H. L. (2000):
Nanoporous membranes and heterostructures based on III-V compounds.
Dordrecht (u.a.), Kluwer Acad. Publ., In: NATO Advanced Research Workshop on Frontiers of Nano-Optoelectronic Systems: Molecular Scale Engineering and Processes <2000, Kiev>: Proceedings. - Dordrecht (u.a.): Kluwer Acad. Publ., 2000, [Conference or Workshop Item]

Kravetsky, V. and Tiginyanu, I. M. and Hildebrandt, R. and Marowsky, G. and Pavlidis, D. and Eisenbach, A. and Hartnagel, H. L. (2000):
Nonlinear optical response of GaN layers on sapphire: the impact of fundamental beam interference.
In: Applied physics letters, pp. S. 810-812, 76, [Article]

Monecke, J. and Irmer, G. and Sarua, A. and Tiginyanu, I. M. and Gartner, G. and Hartnagel, H. L. (2000):
Optische Phononen und elektrische Eigenschaften poröser GaP-Membranen.
In: Frühjahrstagung der Deutschen Physikalischen Gesellschaft <2000, Regensburg> = Verhandlungen der Deutschen Physikalischen Gesellschaft; 35,4, [Conference or Workshop Item]

Sarua, A. and Gärtner, G. and Irmer, G. and Monecke, J. and Tiginyanu, I. M. and Hartnagel, H. L. (2000):
Raman and IR-reflectance spectra of porous III-V semiconductor structures.
In: Physica status solidi, pp. S. 207-211, A 182, [Article]

Sarua, A. and Irmer, G. and Monecke, J. and Tiginyanu, I. M. and Schwab, C. and Grob, J.-J. and Hartnagel, H. L. (2000):
Raman spectroscopy of porous and bulk GaP subjected to MeV-ion implantation and annealing.
In: Journal of applied physics, pp. S. 7006-7012, 88, [Article]

Sarua, A. and Tiginyanu, I. M. and Ursaki, V. V. and Irmer, G. and Monecke, K. and Hartnagel, H. L. (1999):
Charge carrier distribution in free-standing porous GaP membranes studied by Raman spectroscopy.
In: Solid state communications, pp. 581-585, 112, [Article]

Ichizli, Victoria M. and Vogt, Alexander and Sigurdardottir, A. and Tiginyanu, I. M. and Hartnagel, H. L. (1999):
Tunneling spectroscopy of AlAs and InSb interfaces in InAs/AlSb heterostructures.
In: Semiconductor science and technology, pp. 143-147, 14, [Article]

This list was generated on Tue Jul 23 01:11:18 2019 CEST.