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Number of items: 21.

Sirkeli, V. P. ; Tiginyanu, I. M. ; Hartnagel, H. L.
Tiginyanu, Ion ; Sontea, Victor ; Railean, Serghei (eds.) (2020):
Recent Progress in GaN-Based Devices for Terahertz Technology.
pp. 231-235, 4th International Conference on Nanotechnologies and Biomedical Engineering, Chisinau, Republic of Moldova, September 18-21, 2019, ISBN 978-3-030-31866-6,
[Conference or Workshop Item]

Litovchenko, V. ; Evtukh, A. ; Semenenko, M. ; Grigoriev, A. ; Yilmazoglu, Oktay ; Hartnagel, Hans L. ; Sirbu, L. ; Tiginyanu, I. M. ; Ursaki, V. V. (2007):
Electron field emission from narrow band gap semiconductors (InAs).
In: Semiconductor science and technology, 22, pp. 1092-1096. [Article]

Cojocari, Oleg ; Sydlo, Cezary ; Hartnagel, Hans L. ; Tiginyanu, I. M. (2005):
Quasi-vertical Schottky-structures for THZ-Applications.
In: Proceedings of the 4th International Conference on Microelectronics and Computer Science (ICMCSı05), September 15-17, 2005, Chisinau, Moldova, pp. 219-225, [Conference or Workshop Item]

Cojocari, Oleg ; Popa, V. ; Ursaki, V. V. ; Tiginyanu, I. M. ; Hartnagel, Hans L. ; Daumiller, I. (2004):
GaN Schottky multiplier diodes prepared by electroplating : a study of passivation technology.
In: Semiconductor science and technology, 19, pp. 1273-1279. [Article]

Cojocari, Oleg ; Popa, V. ; Ursaki, V. V. ; Tiginyanu, I. M. ; Mutamba, Kabula ; Saglam, Mustafa ; Hartnagel, Hans L. (2004):
Micrometer-size GaN Schottky-diodes for MM-wave frequency multipliers.
In: Conference digest of the 2004 joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics : September 27 - October 1, 2004, University of Karlsruhe (TH), Karlsruhe, Germany / [sponsored b, M. Thumm ..., ed.- Piscataway, NJ, IEEE Operations Center, [Conference or Workshop Item]

Yilmazoglu, Oktay ; Pavlidis, Dimitris ; Litvin, Yu. M. ; Hubbard, S. M. ; Tiginyanu, I. M. ; Mutamba, Kabula ; Hartnagel, Hans L. ; Litovchenko, V. G. ; Evtukh, A. A. (2003):
Field emission from quantum size GaN structures.
In: Applied Surface Science, 220 (1-4), pp. 46-50. Elsevier, ISSN 01694332,
DOI: 10.1016/S0169-4332(03)00750-5,
[Article]

Syrbu, N. N. ; Tiginyanu, I. M. ; Ursaki, V. V. ; Zalamai, V. V. ; Popa, V. ; Hubbard, S. M. ; Pavlidis, Dimitris (2003):
Free excitons in strained MOCVD-grown GaN layers.
In: MRS Internet Journal of Nitride Semiconductor Research, 8 (1), Springer Nature, e-ISSN 1092-5783,
DOI: 10.1557/S1092578300000442,
[Article]

Ursaki, V. V. ; Tiginyanu, I. M. ; Zalamai, V. V. ; Hubbard, S. M. ; Pavlidis, Dimitris (2003):
Optical characterization of AlN/GaN heterostructure.
In: Journal of Applied Physics, 94 (8), pp. 4813-4818. American Institute of Physics, ISSN 00218979,
DOI: 10.1063/1.1609048,
[Article]

Ursaki, V. V. ; Tiginyanu, I. M. ; Ricci, P. C. ; Anedda, A. ; Hubbard, S. M. ; Pavlidis, Dimitris (2003):
Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation.
In: Journal of Applied Physics, 94 (6), pp. 3875-3882. American Institute of Physics, ISSN 0021-8979, e-ISSN 1089-7550,
DOI: 10.1063/1.1604950,
[Article]

Tiginyanu, I. M. ; Ursaki, V. V. ; Zalamai, V. V. ; Langa, S. ; Hubbard, S. M. ; Pavlidis, Dimitris ; Föll, H. (2003):
Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching.
In: Applied Physics Letters, 83 (8), pp. 1551-1553. AIP Publishing, ISSN 0003-6951,
DOI: 10.1063/1.1605231,
[Article]

Ursaki, V. V. ; Tiginyanu, I. M. ; Syrbu, N. N. ; Zalamai, V. V. ; Hubbard, S. M. ; Pavlidis, Dimitris (2003):
Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures.
18, In: Semiconductor science and technology, pp. L9-L11. [Article]

Stevens-Kalceff, M. A. ; Tiginyanu, I. M. ; Langa, S. ; Föll, H. ; Hartnagel, H. L. (2001):
Correlation between morphology and cathodoluminescence in porous GaP.
89, In: Journal of applied physics, [Article]

Saura, A. ; Monecke, J. ; Irmer, G. ; Tiginyanu, I. M. ; Gärtner, G. ; Hartnagel, H. L. (2001):
Fröhlich modes in porous III-V semiconductors.
In: Journal of physics, pp. 6687-6706. [Article]

Tiginyanu, I. M. ; Kravetsky, I. V. ; Marowsky, G. ; Monecke, J. ; Hartnagel, H. L. (2000):
Design of new nonlinear optical materials based on porous III-V compounds.
221, In: physica status solidi (b), (1), pp. 557-560. WILEY-VCH, ISSN 0370-1972, e-ISSN 1521-3951,
DOI: 10.1002/1521-3951(200009)221:1<557::AID-PSSB557>3.0.CO;2-6,
[Article]

Schwab, C. ; Tiginyanu, I. M. ; Sarua, A. ; Irmer, G. ; Monecke, J. ; Sigmund, J. ; Hartnagel, H. L. (2000):
Nanoporous membranes and heterostructures based on III-V compounds.
In: NATO Advanced Research Workshop on Frontiers of Nano-Optoelectronic Systems: Molecular Scale Engineering and Processes <2000, Kiev>: Proceedings. - Dordrecht (u.a.): Kluwer Acad. Publ., 2000, Dordrecht (u.a.), Kluwer Acad. Publ., [Conference or Workshop Item]

Kravetsky, V. ; Tiginyanu, I. M. ; Hildebrandt, R. ; Marowsky, G. ; Pavlidis, D. ; Eisenbach, A. ; Hartnagel, H. L. (2000):
Nonlinear optical response of GaN layers on sapphire: the impact of fundamental beam interference.
76, In: Applied physics letters, pp. S. 810-812. [Article]

Monecke, J. ; Irmer, G. ; Sarua, A. ; Tiginyanu, I. M. ; Gartner, G. ; Hartnagel, H. L. (2000):
Optische Phononen und elektrische Eigenschaften poröser GaP-Membranen.
In: Frühjahrstagung der Deutschen Physikalischen Gesellschaft <2000, Regensburg> = Verhandlungen der Deutschen Physikalischen Gesellschaft; 35,4, [Conference or Workshop Item]

Sarua, A. ; Gärtner, G. ; Irmer, G. ; Monecke, J. ; Tiginyanu, I. M. ; Hartnagel, H. L. (2000):
Raman and IR-reflectance spectra of porous III-V semiconductor structures.
182, In: Physica Status Solidi A, pp. S. 207-211. Wiley-VCH, ISSN 1862-6300,
[Article]

Sarua, A. ; Irmer, G. ; Monecke, J. ; Tiginyanu, I. M. ; Schwab, C. ; Grob, J.-J. ; Hartnagel, H. L. (2000):
Raman spectroscopy of porous and bulk GaP subjected to MeV-ion implantation and annealing.
88, In: Journal of applied physics, pp. S. 7006-7012. [Article]

Sarua, A. ; Tiginyanu, I. M. ; Ursaki, V. V. ; Irmer, G. ; Monecke, K. ; Hartnagel, H. L. (1999):
Charge carrier distribution in free-standing porous GaP membranes studied by Raman spectroscopy.
112, In: Solid State Communications, (10), pp. 581-585. Elsevier ScienceDirect, ISSN 00381098,
DOI: 10.1016/S0038-1098(99)00385-3,
[Article]

Ichizli, Victoria M. ; Vogt, Alexander ; Sigurdardottir, A. ; Tiginyanu, I. M. ; Hartnagel, H. L. (1999):
Tunneling spectroscopy of AlAs and InSb interfaces in InAs/AlSb heterostructures.
14, In: Semiconductor science and technology, (2), pp. 143-147. IOP Publishing Ltd., ISSN 02681242,
DOI: 10.1088/0268-1242/14/2/007,
[Article]

This list was generated on Tue Jan 18 05:10:01 2022 CET.