Sirkeli, V. P. ; Tiginyanu, I. M. ; Hartnagel, H. L.
Hrsg.: Tiginyanu, Ion ; Sontea, Victor ; Railean, Serghei (2020)
Recent Progress in GaN-Based Devices for Terahertz Technology.
4th International Conference on Nanotechnologies and Biomedical Engineering. Chisinau, Republic of Moldova (18.09.2019-21.09.2019)
Konferenzveröffentlichung, Bibliographie

Litovchenko, V. ; Evtukh, A. ; Semenenko, M. ; Grigoriev, A. ; Yilmazoglu, Oktay ; Hartnagel, Hans L. ; Sirbu, L. ; Tiginyanu, I. M. ; Ursaki, V. V. (2007)
Electron field emission from narrow band gap semiconductors (InAs).
In: Semiconductor science and technology, 22
Artikel, Bibliographie

Cojocari, Oleg ; Sydlo, Cezary ; Hartnagel, Hans L. ; Tiginyanu, I. M. (2005)
Quasi-vertical Schottky-structures for THZ-Applications.
Konferenzveröffentlichung, Bibliographie

Cojocari, Oleg ; Popa, V. ; Ursaki, V. V. ; Tiginyanu, I. M. ; Hartnagel, Hans L. ; Daumiller, I. (2004)
GaN Schottky multiplier diodes prepared by electroplating : a study of passivation technology.
In: Semiconductor science and technology, 19
Artikel, Bibliographie

Cojocari, Oleg ; Popa, V. ; Ursaki, V. V. ; Tiginyanu, I. M. ; Mutamba, Kabula ; Saglam, Mustafa ; Hartnagel, Hans L. (2004)
Micrometer-size GaN Schottky-diodes for MM-wave frequency multipliers.
Konferenzveröffentlichung, Bibliographie

Yilmazoglu, Oktay ; Pavlidis, Dimitris ; Litvin, Yu. M. ; Hubbard, S. M. ; Tiginyanu, I. M. ; Mutamba, Kabula ; Hartnagel, Hans L. ; Litovchenko, V. G. ; Evtukh, A. A. (2003)
Field emission from quantum size GaN structures.
In: Applied Surface Science, 220 (1-4)
doi: 10.1016/S0169-4332(03)00750-5
Artikel, Bibliographie

Syrbu, N. N. ; Tiginyanu, I. M. ; Ursaki, V. V. ; Zalamai, V. V. ; Popa, V. ; Hubbard, S. M. ; Pavlidis, Dimitris (2003)
Free excitons in strained MOCVD-grown GaN layers.
In: MRS Internet Journal of Nitride Semiconductor Research, 8 (1)
doi: 10.1557/S1092578300000442
Artikel, Bibliographie

Ursaki, V. V. ; Tiginyanu, I. M. ; Zalamai, V. V. ; Hubbard, S. M. ; Pavlidis, Dimitris (2003)
Optical characterization of AlN/GaN heterostructure.
In: Journal of Applied Physics, 94 (8)
doi: 10.1063/1.1609048
Artikel, Bibliographie

Ursaki, V. V. ; Tiginyanu, I. M. ; Ricci, P. C. ; Anedda, A. ; Hubbard, S. M. ; Pavlidis, Dimitris (2003)
Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation.
In: Journal of Applied Physics, 94 (6)
doi: 10.1063/1.1604950
Artikel, Bibliographie

Tiginyanu, I. M. ; Ursaki, V. V. ; Zalamai, V. V. ; Langa, S. ; Hubbard, S. M. ; Pavlidis, Dimitris ; Föll, H. (2003)
Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching.
In: Applied Physics Letters, 83 (8)
doi: 10.1063/1.1605231
Artikel, Bibliographie

Ursaki, V. V. ; Tiginyanu, I. M. ; Syrbu, N. N. ; Zalamai, V. V. ; Hubbard, S. M. ; Pavlidis, Dimitris (2003)
Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures.
In: Semiconductor science and technology, 18
Artikel, Bibliographie

Stevens-Kalceff, M. A. ; Tiginyanu, I. M. ; Langa, S. ; Föll, H. ; Hartnagel, H. L. (2001)
Correlation between morphology and cathodoluminescence in porous GaP.
In: Journal of applied physics, 89
Artikel, Bibliographie

Saura, A. ; Monecke, J. ; Irmer, G. ; Tiginyanu, I. M. ; Gärtner, G. ; Hartnagel, H. L. (2001)
Fröhlich modes in porous III-V semiconductors.
In: Journal of physics
Artikel, Bibliographie

Tiginyanu, I. M. ; Kravetsky, I. V. ; Marowsky, G. ; Monecke, J. ; Hartnagel, H. L. (2000)
Design of new nonlinear optical materials based on porous III-V compounds.
In: physica status solidi (b), 221 (1)
doi: 10.1002/1521-3951(200009)221:1<557::AID-PSSB557>3.0.CO;2-6
Artikel, Bibliographie

Schwab, C. ; Tiginyanu, I. M. ; Sarua, A. ; Irmer, G. ; Monecke, J. ; Sigmund, J. ; Hartnagel, H. L. (2000)
Nanoporous membranes and heterostructures based on III-V compounds.
Konferenzveröffentlichung, Bibliographie

Kravetsky, V. ; Tiginyanu, I. M. ; Hildebrandt, R. ; Marowsky, G. ; Pavlidis, D. ; Eisenbach, A. ; Hartnagel, H. L. (2000)
Nonlinear optical response of GaN layers on sapphire: the impact of fundamental beam interference.
In: Applied physics letters, 76
Artikel, Bibliographie

Monecke, J. ; Irmer, G. ; Sarua, A. ; Tiginyanu, I. M. ; Gartner, G. ; Hartnagel, H. L. (2000)
Optische Phononen und elektrische Eigenschaften poröser GaP-Membranen.
Konferenzveröffentlichung, Bibliographie

Sarua, A. ; Gärtner, G. ; Irmer, G. ; Monecke, J. ; Tiginyanu, I. M. ; Hartnagel, H. L. (2000)
Raman and IR-reflectance spectra of porous III-V semiconductor structures.
In: Physica Status Solidi A, 182
Artikel, Bibliographie

Sarua, A. ; Irmer, G. ; Monecke, J. ; Tiginyanu, I. M. ; Schwab, C. ; Grob, J.-J. ; Hartnagel, H. L. (2000)
Raman spectroscopy of porous and bulk GaP subjected to MeV-ion implantation and annealing.
In: Journal of applied physics, 88
Artikel, Bibliographie

Sarua, A. ; Tiginyanu, I. M. ; Ursaki, V. V. ; Irmer, G. ; Monecke, K. ; Hartnagel, H. L. (1999)
Charge carrier distribution in free-standing porous GaP membranes studied by Raman spectroscopy.
In: Solid State Communications, 112 (10)
doi: 10.1016/S0038-1098(99)00385-3
Artikel, Bibliographie

Ichizli, Victoria M. ; Vogt, Alexander ; Sigurdardottir, A. ; Tiginyanu, I. M. ; Hartnagel, H. L. (1999)
Tunneling spectroscopy of AlAs and InSb interfaces in InAs/AlSb heterostructures.
In: Semiconductor science and technology, 14 (2)
doi: 10.1088/0268-1242/14/2/007
Artikel, Bibliographie

Miao, Jianmin ; Tiginyanu, I. M. ; Hartnagel, Hans L. (1997)
The characteristics of high-resistance layers produced in n-GaAs using MeV-nitrogen implantation for three-dimensional structuring.
In: Applied Physics Letters, 70 (7)
doi: 10.1063/1.118222
Artikel, Bibliographie