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Gruppiere nach: Keine Gruppierung | Typ des Eintrags | Publikationsjahr | Sprache
Springe zu: 2007 | 2006 | 2005 | 2004 | 2003 | 2002
Anzahl der Einträge: 13.

2007

Wessely, Frank ; Ruland, Tino ; Schwalke, Udo (2007)
Characterization of Carbon Nanotube Field Effect Transistor (CNTFET) Fabrication Process by Atomic Force Microscopy (AFM) and Conductive-AFM.
European Congress on Advanced Materials and Processes (EUROMAT). Nürnberg, Deutschland (10.09.2007-13.09.2007)
Konferenzveröffentlichung, Bibliographie

Wessely, Frank ; Ruland, Tino ; Schwalke, Udo (2007)
Fabrication and Characterisation of Nanoscale Schottky-S/D-MOSFETs and Gated Nanowire Devices on Ultra Thin Body SOI Material.
European Congress on Advanced Materials and Processes (EUROMAT). Nürnberg, Deutschland (10.09.2007-13.09.2007)
Konferenzveröffentlichung, Bibliographie

2006

Rispal, Lorraine ; Ruland, Tino ; Stefanov, Yordan ; Wessely, Frank ; Schwalke, Udo (2006)
Conductive AFM Measurements on Carbon Nanotubes and Application for CNTFET Characterization.
In: ECS Transactions, 3 (2)
Artikel, Bibliographie

Rispal, Lorraine ; Wessely, Frank ; Stefanov, Yordan ; Ruland, Tino ; Schwalke, Udo (2006)
CMOS-compatible Fabrication Process of Carbon-Nanotube-Field-Effect Transistors.
IEEE EDS Workshop on Advanced Electron Devices. Fraunhofer-Institut IMS, Duisburg, Deutschland (13.06.2006-14.06.2006)
Konferenzveröffentlichung, Bibliographie

2005

Ruland, Tino ; Endres, Ralf ; Schwalke, Udo (2005)
Application of Porous Silicon 2D Photonic Crystals as On-chip Interconnects.
European Congress on Advanced Materials and Processes (EUROMAT). Prag, Tschechien (05.09.2005-08.09.2005)
Konferenzveröffentlichung, Bibliographie

Ruland, Tino ; Endres, Ralf ; Schwalke, Udo (2005)
Nanoscale Electrical Characterization of Crystalline Praseodymium Oxide High-k Gate Dielectric MOSFETs with Conductive Atomic Force Microscopy.
European Congress on Advanced Materials and Processes (EUROMAT). Prag, Tschechien (05.09.2005-08.09.2005)
Konferenzveröffentlichung, Bibliographie

Gottlob, H. D. B. ; Lemme, M. C. ; Mollenhauer, T. ; Wahlbrink, T. ; Efavi, J. K. ; Kurz, H. ; Stefanov, Yordan ; Haberle, Klaus ; Komaragiri, Rama Subrahmanyam ; Ruland, Tino ; Zaunert, Florian ; Schwalke, Udo (2005)
Introduction of Crystalline High-k Gate Dielectrics in a CMOS Process.
In: Journal of Non-Crystalline Solids, 351 (21-23)
Artikel, Bibliographie

2004

Stefanov, Yordan ; Ruland, Tino ; Schwalke, Udo (2004)
Electrical AFM Measurements for Evaluation of Nitride Erosion in Shallow Trench Isolation Chemical Mechanical Planarization.
In: Proceedings of the MRS Fall Meeting 2004
Artikel, Bibliographie

Ruland, Tino ; Stefanov, Yordan ; Rispal, Lorraine ; Schwalke, Udo (2004)
Application of Atomic Force Microscopy in Resist Structure Evaluation.
In: VDI/VDE-Gesellschaft Mess- und Automatisierungstechnik, (1860)
Artikel, Bibliographie

Stefanov, Yordan ; Komaragiri, Rama Subrahmanyam ; Ruland, Tino ; Schwalke, Udo (2004)
Electrical AFM Measurements for STI CMP Erosion Evaluation.
In: Nanoscale International Conference: Abstracts
Artikel, Bibliographie

2003

Schwalke, Udo ; Stefanov, Yordan ; Komaragiri, Rama Subrahmanyam ; Ruland, Tino (2003)
Electrical Characterisation of Crystalline Praseodymium Oxide High-K Gate Dielectric MOSFETs.
In: Proceedings of the 33rd European Solid State Device Research Conference (ESSDERC)
Artikel, Bibliographie

Komaragiri, Rama Subrahmanyam ; Schwalke, Udo ; Stefanov, Yordan ; Ruland, Tino (2003)
Comparison of Praseodymium Oxide Gate MOSFETs with Conventional SiO2 MOSFETs: A Simulation Study.
In: Proceedings of the International Workshop on Physics of Semiconductor Devices (IWPSD)
Artikel, Bibliographie

2002

Schwalke, Udo ; Boye, K. ; Haberle, Klaus ; Heller, Rudolf ; Hess, Gisela ; Müller, Gudrun ; Ruland, Tino ; Tzschöckel, Gerhard ; Osten, H. J. ; Fissel, A. ; Müssig, H.-J. (2002)
Process Integration of Crystalline Pr2O3 High-k Gate Dielectrics.
In: Proceedings of 32nd European Solid State Device Research Conference (ESSDERC)
Artikel, Bibliographie

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