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Number of items: 19.

Alaei, H. R. ; Eshghi, H. ; Riedel, R. ; Pavlidis, D. (2010):
Thermal Stress and Strain in a GaN Epitaxial Layer Grown on a Sapphire Substrate by the MOCVD Method.
In: Chinese Journal of Physics, 48 (3), pp. 400-407. [Article]

Cho, E. ; Seo, S. ; Jin, C. ; Pavlidis, D. ; Fu, G. ; Tuerck, J. ; Jaegermann, W. (2009):
Impact of in situ SiNx layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures.
In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 27 (5), pp. 2079-2083. ISSN 10711023,
[Article]

Valizadeh, P. ; Alekseev, E. ; Pavlidis, D. ; Yun, F. ; Morkoc, H. (2006):
Anomalous effects of temperature and UV illumination on the operation of AlGaN/GaN MODFET.
In: Solid State Electronics, 50, pp. 282-286. [Article]

Evtukh, A. ; Litovchenko, V. ; Semenenko, M. ; Yilmazoglu, O. ; Mutamba, K. ; Hartnagel, H. ; Pavlidis, D. (2006):
Formation of conducting nanochannels in diamond-like carbon films.
In: Semiconductor Science and Technology, 21, pp. 1326-1330. [Article]

Valizadeh, P. ; Pavlidis, D. (2005):
Effects of RF and DC stress on AlGaN/GaN MODFETs : a low-frequency noise based investigation.
In: IEEE Transactions on Materials and Device Reliability, 5, pp. 555-563. [Article]

Zhu, X. ; Wang, J. ; Pavlidis, D. (2005):
First demonstration of basic- and Darlington-Coupled monolithic transimpedance amplifiers using InP/GaAsSb/InP DHBTs.
In: Microwave symposium digest 2005 IEEE MTT-S International of the IEEE International Microwave Symposium <2005,12-17 June, Long Beach, CA>, 2005, S. 101-104, [Conference or Workshop Item]

Litovchenko, V. ; Evtukh, A. ; Yilmazoglu, O. ; Mutamba, K. ; Hartnagel, H. L. ; Pavlidis, D. (2005):
Gunn effect in field-emission phenomena.
In: Journal of Applied Physics, 97, pp. 044911-1. [Article]

Zhao, G. ; Hubbard, S. M. ; Pavlidis, D. (2005):
High quality AlN grown by organometallic vapor phase epitaxy (OMVPE).
In: Proceedings of WOCSDICE '05 : Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe <29, 2005, Cardiff, UK>, 2005, S. 83-84, [Conference or Workshop Item]

Hubbard, S. M. ; Zhao, G. ; Pavlidis, D. ; Sutton, W. ; Cho, E. (2005):
High resistivity GaN Buffer templates and their optimization for GaN-Based HFETs.
In: Journal of Crystal Growth, 284, pp. 297-305. [Article]

Zhu, X. ; Wang, J. ; Pavlidis, D. (2005):
InP/GaAsSb/InP DHBT monolithic transimpedance amplifier with large dynamic range.
In: Conference proceedings / European Microwave Week 2005 : 3 - 7 October 2005, CNIT la Défense, Paris, France; [comprises the] 35th European Microwave Conference 2005 ; The European Conference on Wireless Technology 2005 ; European Radar Conference 2005 ; G, [Elektronische Ressource]. - London, Horizon House Publ, [Conference or Workshop Item]

Valizadeh, P. ; Pavlidis, D. (2005):
Investigation of the impact of Al mole-fraction on the consequences of RF stress on AlxGa1-xN/GaN MODFETs.
In: IEEE Transactions on Electron Devices, 52, pp. 1933-1939. [Article]

Valizadeh, P. ; Pavlidis, D. ; Shiojima, K. ; Makimura, T. ; Shigekawa, N. (2005):
Low frequency noise of AlGaN/GaN MODFETs : a comparative study of surface, barrier and heterointerface effects.
In: Solid State Electronics, 49, pp. 1352-1360. [Article]

Wang, J. ; Zhu, X. ; Pavlidis, D. ; Hsu, Shawn (2005):
Monolithic transimpedance amplifiers for low-power/low-noise and maximum bandwidth using InP/GaAsSb/InP DHBTs.
In: Proceedings of WOCSDICE '05 : Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe <29, 2005, Cardiff, UK>, 2005, S. 69-70, [Conference or Workshop Item]

Mutamba, K. ; Yilmazoglu, O. ; Sydlo, C. ; Pavlidis, D. ; Mir, S. ; Hubbard, S. ; Zhao, G. ; Daumiller, I. (2005):
Technology and characteristics of GaN-based diodes for high-field operation.
In: Proceedings of WOCSDICE ' 05 : Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe <29, 2005,Cardiff, UK>, 2005, S.111 - 112, [Conference or Workshop Item]

Seo, S. ; Pavlidis, D. ; Moon, J. S. (2005):
Wideband balanced AlGaN/GaN HEMT MMIC low noise amplifier.
In: Electronic Letters, 41, pp. 909-911. [Article]

Seo, S. ; Pavlidis, D. ; Moon, J.-S. (2005):
Wideband balanced AlGaN/GaN HEMT MMIC low noise amplifier for transceiver front-ends.
In: Conference proceedings / European Microwave Week 2005 : 3 - 7 October 2005, CNIT la Défense, Paris, France; [comprises the] 35th European Microwave Conference 2005 ; The European Conference on Wireless Technology 2005 ; European Radar Conference 2005 ; G, [Elektronische Ressource]. - London, Horizon House Publ, [Conference or Workshop Item]

Tiginyanu, I. ; Kravetsky, I. ; Pavlidis, D. ; Eisenbach, A. ; Hildebrandt, R. ; Marowsky, G. ; Hartnagel, H. L. (2000):
Nonlinear optical characterization of GaN layers grown by MOCVD on sapphire.
In: MRS Internet journal nitride semiconductor research. 5S1, W11.52 (2000), [Article]

Kravetsky, V. ; Tiginyanu, I. M. ; Hildebrandt, R. ; Marowsky, G. ; Pavlidis, D. ; Eisenbach, A. ; Hartnagel, H. L. (2000):
Nonlinear optical response of GaN layers on sapphire: the impact of fundamental beam interference.
76, In: Applied physics letters, pp. S. 810-812. [Article]

Tiginyanu, I. ; Pavlidis, D. ; Cao, J. ; Eisenbach, A. ; Ichizli, Victoria M. ; Hartnagel, Hans L. ; Anedda, A. ; Corpino, R. (1997):
Time-resolved photoluminescence characterisation of GaN layers grown by metalorganic chemical vapor deposition.
In: Conference on Defect Recognition and Imaging Processing <7, 1997>: Proceedings, [Conference or Workshop Item]

This list was generated on Sat Jun 19 02:21:39 2021 CEST.